HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE(sat) tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V Ec G Ec IC25 TC = 25°C 160 A IL Terminal Current Limit(RMS) 100 A G = Gate, E = Emitter, C = Collector IC90 TC = 90°C 96 A c ICM TC = 25°C, 1 ms 400 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 2.4 Ω Clamped inductive load @ 0.8 VCES ICM = 200 A PC TC = 25°C 416 W -40 ... +150 °C TJ TJM 150 °C Tstg -40 ... +150 °C 2500 3000 V~ V~ VISOL 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 19 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 1 mA , VGE = 0 V 600 VGE(th) IC = 1 mA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 120A, VGE = 15 V © 2004 IXYS All rights reserved g TJ = 25°C TJ = 125°C V 5.5 V 200 2 µA mA ±400 nA 2.3 V C either emitter terminal can be used as Main or Kelvin Emitter Features • Conforms to SOT-227B outline • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Low collector-to-case capacitance (< 50 pF) • Low package inductance (< 5 nH) - easy to drive and to protect Applications •AC motor speed control •DC servo and robot drives •DC choppers •Uninterruptible power supplies (UPS) •Switch-mode and resonant-mode power supplies Advantages •Easy to mount with 2 screws •Space savings •High power density DS98911B(09/04) IXGE 200N60B Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 60 A; VCE = 10 V, 50 75 SOT-227B miniBLOC S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge td(on) Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff pF 680 pF 190 pF 350 nC 72 nC 131 nC 60 ns 45 ns IC = 120A, VGE = 15 V, VCE = 0.5 VCES Qgc tri 11000 Inductive load, TJ = 25°°C IC = 100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 Ω 2.4 mJ Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200 360 ns 160 280 ns 5.5 9.6 mJ Inductive load, TJ = 125°°C 60 ns 60 ns 4.8 mJ 290 ns IC =100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 250 ns 8.7 mJ RthJC Please see IXGN200N60B data sheet for characteristic curves. 0.3 K/W 0.07 RthCK K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692