Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) 1.0 For light source of remote control systems 13.5±1.0 11.5±1.0 3.6±0.3 1.0 Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent epoxy resin package 2-1.0±0.15 2-0.6±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation * Symbol Ratings Unit PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP* 1.5 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 0.6±0.15 ø6.0±0.2 2.54 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min typ Radiant intensity at center Ie IF = 50mA Peak emission wavelength λP IF = 50mA Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 50mA 1.35 * max 13 Unit mW/sr 950 nm nm 1.50 V Pulse forward voltage VFP IFP = 1.0A 3.0 V Reverse current (DC) IR VR = 3V 10 µA Capacitance between pins Ct VR = 0V, f = 1MHz 20 pF Half-power angle θ The angle in which radiant intencity is 50% 15 deg. f = 100 Hz, Duty cycle = 0.1 % 1 Infrared Light Emitting Diodes LN66F IF — Ta IFP — Duty cycle 60 tw = 10µs Ta = 25˚C Ta = 25˚C 70 30 20 10 10 IF (mA) Pulse forward current 40 1 Forward current 50 IFP (A) IF (mA) 10 2 Allowable forward current IF — VF 80 10 –1 60 50 40 30 20 10 –2 10 20 40 60 80 10 –3 10 –2 100 10 –1 Ambient temperature Ta (˚C ) ∆Ie — IFP VF (V) 10 (2) 10 10 2 10 3 10mA 0.8 0.4 0 – 40 10 4 λP — Ta 1000 0 40 IF = 50mA 80 120 1 10 –1 – 40 0 40 Relative radiant intensity (%) 920 120 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 940 80 Ambient temperature Ta (˚C ) IF = 50mA 960 1.6 Ambient temperature Ta (˚C ) 100 980 1.2 ∆Ie — Ta 1.2 Pulse forward current IFP (mA) Peak emission wavelength λP (nm) 0.8 10 10 –1 1 0.4 Forward voltage VF (V) IF = 50mA Forward voltage Relative radiant intensity ∆Ie (1) 10 –2 0 VF — Ta 10 2 1 0 10 2 10 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 10 3 1 Duty cycle (%) Relative radiant intensity (%) 0 Relative radiant intensity ∆Ie 0 – 25 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm) LN66F Infrared Light Emitting Diodes Frequency characteristics 10 Ta = 25˚C Modulation output 1 10 –1 10 –2 10 –3 10 10 2 Frequency 10 3 10 4 f (kHz) 3