IXYS DSEP40-03AS Hiperfred epitaxial diode with soft recovery Datasheet

DSEP 40-03AS
Advanced Technical Information
HiPerFREDTM Epitaxial Diode
IFAV = 40 A
VRRM = 300 V
trr
= 35 ns
with soft recovery
VRSM
VRRM
V
V
300
300
Type
C
A
TO-263
C (TAB)
A
A
DSEP 40-03AS
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
rect., d = 0.5; TC = 120°C
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
TVJ = 25°C; non-repetitive
IAS = 9 A; L = 100 µH
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Weight
typical
Symbol
Conditions
IR
①
VF ②
35
40
A
A
300
A
4
mJ
0.9
A
-40...+175
175
-40...+150
°C
°C
°C
175
W
2
g
Characteristic max. Values
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 150°C
1
100
µA
µA
IF = 40 A;
1.11
1.42
V
V
0.85
K/W
35
ns
3.5
A
TVJ = 150°C
TVJ = 25°C
RthJC
trr
typ.
IRM typ.
VR = 100 V; IF = 40 A;
-diF/dt = 200 A/µs; TVJ = 25°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0%
② Pulse Width = 300 µs, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified.
Features
International standard package
• Planar passivated chips
• Very short recovery time
l
Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
0528
Dimensions see Outlines.pdf
1-1
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