TI1 LP5910-1.825YKAT 300-ma low-noise, low-iq ldo Datasheet

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LP5910
SNVSA91D – SEPTEMBER 2015 – REVISED SEPTEMBER 2016
LP5910 300-mA Low-Noise, Low-IQ LDO
1 Features
3 Description
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The LP5910 is a low-noise LDO that can supply up to
300 mA of output current. Designed to meet the
requirements of RF and analog circuits, this device
provides low noise, high PSRR, low quiescent
current, and superior line transient and load transient
response. Using new innovative design techniques
the LP5910 offers class-leading noise performance
without a noise bypass capacitor and with the option
for remote output capacitor placement.
1
Input Voltage Range: 1.3 V to 3.3 V
Output Voltage Range: 0.8 V to 2.3 V
Output Current: 300 mA
PSRR: 75 dB at 1 kHz
Output Voltage Tolerance: ±2%
Low Dropout: 120 mV (Typical)
Very Low IQ (Enabled, No Load): 12 µA
Low Output-Voltage Noise: 12 µVRMS
Stable with Ceramic Input and Output Capacitors
Thermal Overload Protection
Short-Circuit Protection
Reverse Current Protection
Automatic Output Discharge for Fast Turnoff
The device contains a reverse current protection
circuit that prevents a reverse current flow through
the LDO to the IN pin when the input voltage is lower
than the output voltage.
When the Enable (EN) pin is low, and the output is in
an OFF state, an automatic output discharge circuit
discharges the output capacitance for fast turnoff.
With its low input and low output voltage range the
LP5910 is well-suited as a post DC-DC regulator
(post BUCK regulator) or for single- or dual-cell
applications.
2 Applications
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Mobile Phones, Tablets
Digital Cameras and Audio Devices
Portable and Battery-Powered Equipment
Portable Medical Equipment
Virtual Reality
RF, PLL, VCO, and Clock Power Supplies
IP Cameras
The device is designed to work with a 1-μF input and
a 1-μF output ceramic capacitor. A separate noise
bypass capacitor is not required.
This device is available with fixed output voltages
from 0.8 V to 2.3 V in 25-mV steps. Contact Texas
Instruments Sales for specific voltage option needs.
Device Information(1)
PART NUMBER
LP5910
PACKAGE
BODY SIZE
WSON (6)
2.00 mm × 2.00 mm (NOM)
DSBGA (4)
0.742 mm × 0.742 mm (MAX)
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VIN
VOUT
IN
OUT
CIN
COUT
LP5910
Enable
EN
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LP5910
SNVSA91D – SEPTEMBER 2015 – REVISED SEPTEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
11
11
11
12
8
Applications and Implementation ...................... 13
8.1 Application Information............................................ 13
8.2 Typical Application .................................................. 13
9 Power Supply Recommendations...................... 17
10 Layout................................................................... 17
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Examples...................................................
DSBGA Mounting..................................................
DSBGA Light Sensitivity .......................................
17
17
17
17
11 Device and Documentation Support ................. 18
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
18
18
18
18
18
18
12 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (June 2016) to Revision D
Page
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Changed wording of data sheet title and list of Applications ................................................................................................. 1
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Changed "Very Low Noise Without a Noise Bypass Capacitor: 12 µVRMS Typical" to "Low Output-Voltage Noise: 12
µVRMS"..................................................................................................................................................................................... 1
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Changed wording of first sentence of Description ................................................................................................................. 1
Changes from Revision B (October 2015) to Revision C
•
Changed "linear regulator" to "LDO" on page 1 .................................................................................................................... 1
Changes from Revision A (October 2015) to Revision B
•
2
Page
Changed "... = 2.3 V" to "... ≤ 2.3 V" in Dropout Voltage rows; added DSBGA only; also added new rows in Dropout
Voltage for WSON package. .................................................................................................................................................. 5
Changes from Original (September 2015) to Revision A
•
Page
Page
Changed device data sheet from product preview to production data status; added icon for reference design to top
navigators .............................................................................................................................................................................. 1
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5 Pin Configuration and Functions
YKA Package
4-Pin Ultra-Thin DSBGA
Top View
IN
A1
OUT
A2
B1
EN
B2
GND
YKA Package
4-Pin Ultra-Thin DSBGA
Bottom View
OUT
IN
A1
A2
B2
GND
B1
EN
DRV Package
6-Pin WSON With Thermal Pad
Top View
OUT
1
6
IN
NC
2
5
GND
NC
3
4
EN
Pin Functions
PIN
I/O
DESCRIPTION
4
I
Enable input; disables the regulator when logic low. Enables the regulator when logic
high. An internal 1-MΩ pull down resistor connects this input to ground.
B2
5
—
A1
6
I
NC
—
2, 3
—
No internal connection. Connect to ground or leave open.
OUT
A2
1
O
Voltage output. A 1-µF low-ESR capacitor must be connected from this pin to the
GND pin. Connect this output to the load circuit.
Exposed Pad
—
Thermal Pad
—
The exposed thermal pad on the bottom of the package must be connected to a
copper area under the package on the PCB. Connect to ground potential or leave
floating. Do not connect to any potential other than the same ground potential seen at
device pin 5 (GND). See Power Dissipation for more information.
NAME
DSBGA
WSON
EN
B1
GND
IN
Common ground
Voltage supply input. A 1-μF capacitor must be connected at this input.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
Input voltage, VIN
–0.3
3.6
V
Output voltage, VOUT
–0.3
3.6
V
Enable input voltage, VEN
–0.3
3.6
Continuous power dissipation (3)
Junction temperature, TJ(MAX)
Storage temperature, Tstg
(1)
(2)
(3)
V
Internally Limited
–65
W
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to the GND pin.
Internal thermal shutdown circuitry protects the device from permanent damage.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±1000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±250
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
Input voltage, VIN
1.3
3.3
UNIT
V
Output voltage, VOUT
0.8
2.3
V
Enable input voltage, VEN
0
3.3
V
Output current, IOUT
0
300
mA
Junction temperature, TJ (1)
–40
125
°C
(1)
–40
85
°C
Ambient temperature, TA
(1)
The maximum ambient temperature, (TA(MAX)) is a recommended value only and can vary depending on device power dissipation and
RθJA. For reliable operation, the junction temperature (TJ) must be limited to a maximum of 125°C. Ambient temperature (TA), thermal
resistance (RθJA) , VIN, VOUT, and IOUT all define TJ : TJ = TA + (RθJA × ((VIN – VOUT) × IOUT).
6.4 Thermal Information
LP5910
THERMAL METRIC
(1)
YKA (DSBGA)
DRV (WSON)
4 PINS
6 PINS
202.8
79.2 (3)
RθJA (2)
Junction-to-ambient thermal resistance, High-K
RθJC(top)
Junction-to-case (top) thermal resistance
3.3
110.2
RθJB
Junction-to-board thermal resistance
36.0
48.7
ψJT
Junction-to-top characterization parameter
0.4
5.2
ψJB
Junction-to-board characterization parameter
36.0
49.1
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
18.1
(1)
(2)
(3)
4
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Thermal resistance value RθJA is based on the EIA/JEDEC High-K printed circuit board defined by: JESD51-7 - High Effective Thermal
Conductivity Test Board for Leaded Surface Mount Packages.
The PCB for the WSON/DRV package RθJA includes two (2) thermal vias under the exposed thermal pad per EIA/JEDEC JESD51-5.
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6.5 Electrical Characteristics
Unless otherwise specified, VIN = VOUT(NOM) + 0.5 V, VEN = 1 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF. (1) (2) (3)
PARAMETER
ΔVOUT
ILOAD
TEST CONDITIONS
MIN
Output voltage tolerance
VIN = (VOUT(NOM) + 0.5 V) to 3.3 V,
IOUT = 1 mA to 300 mA
–2
Line regulation
VIN = (VOUT(NOM) + 0.5 V) to 3.3 V,
IOUT = 1 mA
Load regulation
IOUT = 1 mA to 300 mA
Load current
See (4)
230
350
VEN = 0.3 V, –40°C ≤ TJ ≤ 85°C
0.02
2
Output reverse current (6)
VOUT > VIN
VOUT = 3.3 V, VIN = VEN = 0 V
IG
Ground current (7)
IOUT = 0 mA (VOUT = 2.3 V)
ILIMIT
PSRR
eN
TSD
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Output current limit
Power supply rejection ratio (9)
%/mA
300
VEN = 1 V, IOUT = 300 mA
IRO
Dropout voltage
0.002
25
IQ(SD)
–20
VOUT = 3.3 V, VIN = VEN = 1.3 V
0
50
µA
15
µA
200
300
1.5 V ≤ VOUT ≤ 2.3 V,
IOUT = 300 mA
DSBGA only
120
180
1.3 V ≤ VOUT < 1.5 V,
IOUT = 300 mA
WSON only
245
370
1.5 V ≤ VOUT ≤ 2.3 V,
IOUT = 300 mA
WSON only
145
220
mV
VOUT = VOUT(NOM) – 0.1 V
VIN = VOUT(NOM) + 0.5 V
450
ƒ = 100 Hz, IOUT = 20 mA, VOUT ≥ 1 V
80
ƒ = 1 kHz, IOUT = 20 mA, VOUT ≥ 1 V
75
ƒ = 10 kHz, IOUT = 20 mA, VOUT ≥ 1 V
65
ƒ = 100 kHz, IOUT = 20 mA, VOUT ≥ 1 V
40
ƒ = 2 MHz, IOUT = 20 mA, VOUT ≥ 1 V
25
ƒ = 100 Hz, IOUT = 20 mA, 0.8 V < VOUT < 1 V
65
ƒ = 1 kHz, IOUT = 20 mA, 0.8 V < VOUT < 1 V
65
ƒ = 10 kHz, IOUT = 20 mA, 0.8 V < VOUT < 1 V
65
ƒ = 100 kHz, IOUT = 20 mA, 0.8 V < VOUT < 1 V
40
ƒ = 2 MHz, IOUT = 20 mA, 0.8 V < VOUT < 1 V
25
Thermal shutdown
TJ rising until output is OFF
Thermal hysteresis
TJ falling from shutdown
µA
µA
DSBGA only
BW = 10 Hz to 100 kHz
mA
0
1.3 V ≤ VOUT < 1.5 V,
IOUT = 300 mA
Output noise voltage (9)
%VOUT
%/V
12
Quiescent current in
shutdown (5)
UNIT
0.01
VEN = 1 V, IOUT = 0 mA
Quiescent current (5)
VDO
MAX
2
0
IQ
(8)
TYP
IOUT = 1 mA
12
IOUT = 300 mA
12
mA
dB
µVRMS
160
15
°C
All voltages are with respect to the device GND pin.
Minimum and maximum limits are ensured through test, design, or statistical correlation over the TJ range of –40°C to 125°C, unless
otherwise stated. Typical values represent the most likely parametric norm at TA = 25°C, and are provided for reference purposes only.
CIN, COUT: Low-ESR Surface-Mount-Ceramic Capacitors (MLCCs) used in setting electrical characteristics.
The device maintains a stable, regulated output voltage without a load current.
Quiescent current is defined here as the difference in current between the input voltage source and the load at VOUT. IQ = (IIN – IOUT)
Output reverse current (IRO) is measured at the IN pin.
Ground current is defined here as the total current flowing to ground as a result of all input voltages applied to the device.
Dropout voltage is the voltage difference between the input and the output at which the output voltage drops to 100 mV below its
nominal value. Dropout voltage is not a valid condition for output voltages less than 1.3 V as compliance with the minimum operating
input voltage can not be ensured.
This specification is verified by design.
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Electrical Characteristics (continued)
Unless otherwise specified, VIN = VOUT(NOM) + 0.5 V, VEN = 1 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF.(1)(2)(3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LOGIC INPUT THRESHOLDS
VIL
EN low threshold (Off)
VIH
EN high threshold (On)
IEN
EN pin current (10)
0.3
VIN = 1.3 V to 3.3 V
V
1
VEN = 3.3 V, VIN = 3.3 V
3.3
VEN = 0 V, VIN = 3.3 V
µA
0.001
TRANSIENT CHARACTERISTICS (10)
Line transient
(9)
ΔVOUT
Load transient (9)
VIN = (VOUT(NOM) + 0.5 V) to (VOUT(NOM) + 1 V)
in 30 µs
IOUT = 1 mA
VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) + 0.5 V)
in 30 µs
IOUT = 1 mA
IOUT = 1 mA to 100 mA in 10 µs
0
mV
–1
0
–45
IOUT = 100 mA to 1 mA in 10 µs
45
Overshoot on start-up (9)
tON
Turnon time
1
mV
5%
From VEN > VIH to VOUT = 95% of VOUT(NOM)
80
200
µs
OUTPUT DISCHARGE
RAD
Output discharge pulldown
resistance
VEN = 0 V, VIN = 2.3 V
160
Ω
(10) There is a 1-MΩ resistor between EN and ground on the device.
6
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6.6 Typical Characteristics
Unless otherwise stated: VOUT = 1.8 V, VIN = VOUT + 0.5 V, VEN = VIN, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TJ = 25°C.
1.2
1.2
ON (VIH)
OFF (VIL)
1.1
1
1
0.9
VEN Thresholds (V)
Enable Threshold (V)
ON (VIH)
OFF (VIL)
1.1
0.8
0.7
0.6
0.5
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.3
0.3
0.2
-50
0.2
-25
0
25
50
75
Junction Temperature (°C)
VIN = 2.3 V
100
125
1
1.5
3
3.5
D002
VOUT = 1.8 V
Figure 1. VEN Threshold vs Temperature
Figure 2. VEN Thresholds vs VIN
1.2
ON (VIH)
OFF (VIL)
1.1
ON (VIH)
OFF (VIL)
1.1
1
1
VEN Thresholds (V)
VEN Thresholds (V)
2.5
VIN (V)
1.2
0.9
0.8
0.7
0.6
0.5
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.3
0.3
0.2
0.2
1
1.5
2
2.5
3
3.5
VIN (V)
1
1.5
2
2.5
3
3.5
VIN (V)
D003
TJ = –40°C
D004
TJ = 125°C
Figure 3. VEN Thresholds vs VIN
Figure 4. VEN Thresholds vs VIN
2
2
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
VOUT (V)
VOUT (V)
2
D001
1
0.8
0.6
1
0.8
0.6
0.4
0.4
18 k: (100 µA)
1.8 k: (1 mA)
180 : (10 mA)
0.2
180 : (10 mA)
18 : (100 mA)
6 : (300 mA)
0.2
0
0
0
0.5
1
1.5
2
VIN (V)
2.5
VEN = VIN
3
3.5
0
0.5
D005
1
1.5
2
VIN (V)
2.5
3
3.5
D006
VEN = VIN
Figure 5. VOUT vs VIN
Figure 6. VOUT vs VIN
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Typical Characteristics (continued)
Unless otherwise stated: VOUT = 1.8 V, VIN = VOUT + 0.5 V, VEN = VIN, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TJ = 25°C.
25
25
125°C
85°C
25°C
-40°C
20
IQ [No Load] (µA)
IQ [No Load] (µA)
20
125°C
85°C
25°C
-40°C
15
10
5
15
10
5
0
0
0
0.5
1
1.5
2
VIN (V)
VOUT = 0.8 V
2.5
3
3.5
0
0.5
1
VEN = VIN
No load
VOUT = 1.2 V
3.5
D008
No load
25
125°C
85°C
25°C
-40°C
125°C
85°C
25°C
-40°C
20
IQ [No Load] (µA)
20
IQ [No Load] (µA)
3
Figure 8. IQ vs VIN
25
15
10
5
15
10
5
0
0
0
0.5
1
1.5
2
VIN (V)
VOUT = 1.8 V
2.5
3
3.5
0
0.5
1
VEN = VIN
No load
VOUT = 2.3 V
-10
-10
-20
-20
-30
-30
PSRR (dB)
0
-40
-50
-60
D010
VEN = VIN
No load
-60
-80
-80
-90
-90
-100
10
-100
10
VOUT = 0.8 V
3.5
-50
-70
10k
100k
Frequency (Hz)
3
-40
-70
1k
2.5
Figure 10. IQ vs VIN
0
100
1.5
2
VIN (V)
D009
Figure 9. IQ vs VIN
PSRR (dB)
2.5
VEN = VIN
Figure 7. IQ vs VIN
1M
VIN = 1.3 V
10M
100
D011
IOUT = 20 mA
VOUT = 1.8 V
Figure 11. PSRR vs Frequency
8
1.5
2
VIN (V)
D007
1k
10k
100k
Frequency (Hz)
1M
VIN = 2.3 V
10M
D012
IOUT = 20 mA
Figure 12. PSRR vs Frequency
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Typical Characteristics (continued)
0
0.5
-10
0.45
-20
0.4
-30
0.35
Noise (µV / —Hz)
PSRR (dB)
Unless otherwise stated: VOUT = 1.8 V, VIN = VOUT + 0.5 V, VEN = VIN, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TJ = 25°C.
-40
-50
-60
-70
0.3
0.25
0.2
0.15
-80
0.1
-90
0.05
-100
10
100
1k
VOUT = 2.3 V
10k
100k
Frequency (Hz)
1M
1 mA
300 mA
0
10
10M
100
VIN = 2.8 V
IOUT = 20 mA
VOUT = 0.8 V
Figure 13. PSRR vs Frequency
100000
1000000
D014
VIN = 1.3 V
Figure 14. Noise Density
0.5
1.5
1 mA
300 mA
0.45
1.25
1
0.4
0.75
0.35
0.5
0.3
'VOUT (%)
Noise (µV / —Hz)
1000
10000
Frequency (Hz)
D013
0.25
0.2
0.25
0
-0.25
-0.5
0.15
-0.75
0.1
-1
0.05
-1.25
0
10
100
1000
10000
Frequency (Hz)
VOUT = 2.3 V
100000
-1.5
-50
1000000
VIN = 2.8 V
0
25
50
75
Junction Temperature (°C)
VIN = VOUT + 0.5 V
Figure 15. Noise Density
100
125
D016
IOUT = 1 mA
Figure 16. ΔVOUT vs Temperature
250
250
VIN = 3.3 V
VIN = 1.3 V
225
VIN = 3.3 V
VIN = 2.3 V
225
200
200
175
175
150
150
IGND (µA)
IGND (µA)
-25
D015
125
100
125
100
75
75
50
50
25
25
0
0
0
50
100
150
IOUT (mA)
200
VOUT = 0.8 V
250
300
0
50
D017
100
150
IOUT (mA)
200
250
300
D018
VOUT = 1.8 V
Figure 17. IGND vs IOUT
Figure 18. IGND vs IOUT
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Typical Characteristics (continued)
Unless otherwise stated: VOUT = 1.8 V, VIN = VOUT + 0.5 V, VEN = VIN, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TJ = 25°C.
250
300
VIN = 3.3 V
VIN = 2.8 V
225
200
175
200
150
VDO (mV)
IGND (µA)
VOUT = 1.2 V
VOUT = 1.8 V
VOUT = 2.3 V
250
125
100
150
100
75
50
50
25
0
0
0
50
100
150
IOUT (mA)
200
250
300
0
50
100
D019
150
IOUT (mA)
200
250
300
D020
VOUT = 2.3 V
Figure 20. Dropout Voltage vs IOUT
2.5
2.5
1.5
1.5
1
1
0.5
IOUT (mA)
2
VOUT (V)
0.5
12
100
8
80
4
60
0
40
-4
20
-8
IOUT
'VOUT
VIN
VOUT
0
-25
0
25
50
75
Time (µs)
VEN = VIN
100
0
-20
0
150
125
-10
10
D021
VOUT = 1.8 V
COUT = 1 µF
VIN = 2.3 V
IOUT = 1 mA to 100 mA
Figure 21. Turnon Time
20
30
40
Time (µs)
50
60
70
-12
80
D022
VOUT = 1.8 V
COUT = 1 µF
tRISE = 10 µs
Figure 22. Load Transient Response
12
8
2.5
8
80
4
2.0
4
60
0
1.5
0
40
-4
1.0
-4
20
-8
0.5
IOUT
'VOUT
100
VIN (V)
3.0
'VOUT (mV)
12
120
IOUT (mA)
0
'VOUT (mV)
VIN (V)
2
120
'VOUT (mV)
Figure 19. IGND vs IOUT
-8
VIN (V)
'VOUT (mV)
0
-20
-10
0
10
VIN = 2.3 V
IOUT = 100 mA to 1 mA
20
30
40
Time (µs)
50
VOUT = 1.8 V
tFALL = 10 µs
60
70
-12
80
0.0
0
50
D023
COUT = 1 µF
ΔVIN = 0.5 V
tRISE = tFALL = 30 µs
Figure 23. Load Transient Response
10
100
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150
200 250 300
Time (Ps)
VOUT = 1.8 V
IOUT = 1 mA
350
400
450
-12
500
D024
COUT = 1 µF
Figure 24. Line Transient Response
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7 Detailed Description
7.1 Overview
The LP5910 is a linear regulator capable of supplying 300-mA output current. Designed to meet the requirements
of RF and analog circuits, the LP5910 device provides low noise, high PSRR, low quiescent current, and low
line/load transient response figures. Using new innovative design techniques the LP5910 offers class-leading
noise performance without a noise bypass capacitor and the option for remote output capacitor placement.
7.2 Functional Block Diagram
Current
limit
IN
OUT
VIN
EA
Bandgap
Output
discharge
EN
EN
Control
GND
7.3 Feature Description
7.3.1 No-Load Stability
The LP5910 remains stable and in regulation with no external load.
7.3.2 Thermal Overload Protection
The LP5910 contains a thermal shutdown protection circuit to turn off the output current when excessive heat is
dissipated in the LDO. Thermal shutdown occurs when the thermal junction temperature (TJ) of the main passFET exceeds 160°C (typical). Thermal shutdown hysteresis assures that the LDO again resets (turns on) when
the temperature falls to 145°C (typical).
7.3.3 Short-Circuit Protection
The LP5910 contains internal current limit which reduces output current to a safe value if the output is
overloaded or shorted. Depending upon the value of VIN, thermal limiting may also become active as the average
power dissipated causes the die temperature to increase to the limit value (about 160°C). The hysteresis of the
thermal shutdown circuitry can result in a cyclic behavior on the output as the die temperature heats and cools.
7.3.4 Output Automatic Discharge
The LP5910 output employs an internal 160-Ω (typical) pulldown resistance to discharge the output when the EN
pin is low, and the device is disabled.
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Feature Description (continued)
7.3.5 Reverse Current Protection
The device contains a reverse current protection circuit that prevents a backward current flowing through the
LDO from the OUT pin to the IN pin.
7.4 Device Functional Modes
7.4.1 Enable (EN)
The LP5910 may be switched to the ON or OFF state by logic input at the EN pin. A logic-high voltage on the EN
pin turns the device to the ON state. A logic-low voltage on the EN pin turns the device to the OFF state. If the
application does not require the shutdown feature, the EN pin must be tied to VIN to keep the regulator output
permanently in the ON state when power is applied
To ensure proper operation, the signal source used to drive the EN input must be able to swing above and below
the specified turnon or turnoff voltage thresholds listed in the Electrical Characteristics section under VIL and VIH.
A 1-MΩ pulldown resistor ties the EN input to ground. If the EN pin is left open, the internal 1-MΩ pulldown
resistor ensures that the device is turned into an OFF state by default.
When the EN pin is low, and the output is in an OFF state, the output activates an internal pulldown resistance to
discharge the output capacitance for fast turnoff.
12
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8 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LP5910 is designed to meet the requirements of RF and analog circuits, by providing low noise, high PSRR,
low quiescent current, and low line or load transient response figures. The device offers excellent noise
performance without the need for a noise bypass capacitor and is stable with input and output capacitors with a
value of 1 µF. The LP5910 delivers this performance in an industry-standard DSBGA package which, for this
device, is specified with a TJ of –40°C to +125°C.
8.2 Typical Application
Figure 25 shows the typical application circuit for the LP5910. Input and output capacitances may need to be
increased above 1-µF minimum for some applications.
VIN
VOUT
IN
OUT
1 µF
1 µF
LP5910
Enable
EN
GND
Figure 25. LP5910 Typical Application
8.2.1 Design Requirements
For typical LP5910 applications, use the parameters listed in Table 1.
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage
1.3 V to 3.3 V
Output voltage
0.8 V to 2.3 V
Output current
300 mA
Output capacitor range
1 µF to 10 µF
8.2.2 Detailed Design Procedure
8.2.2.1 External Capacitors
Like most low-dropout regulators, the LP5910 requires external capacitors for regulator stability. The device is
specifically designed for portable applications requiring minimum board space and smallest components. These
capacitors must be correctly selected for good performance.
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8.2.2.2 Input Capacitor
An input capacitor is required for stability. It is recommended that a 1-µF capacitor be connected from the
LP5910 IN pin to ground. (This capacitance value may be increased without limit.) The input capacitor must be
located a distance of not more than 1 cm from the IN pin and returned to a clean analog ground. Any good
quality ceramic, tantalum, or film capacitor may be used at the input.
NOTE
Tantalum capacitors can suffer catastrophic failures due to surge current when connected
to a low-impedance source of power (like a battery or a very large capacitor). If a tantalum
capacitor is used at the input, it must be guaranteed by the manufacturer to have a surge
current rating sufficient for the application. There are no requirements for the equivalent
series resistance (ESR) on the input capacitor, but tolerance and temperature coefficient
must be considered when selecting the capacitor to ensure the capacitance remains 1 µF
±30% over the entire operating temperature range.
8.2.2.3 Output Capacitor
For capacitance values in the range of 1 µF to 4.7 µF, ceramic capacitors are the smallest, least expensive and
have the lowest ESR values, thus making them best for eliminating high frequency noise. The ESR of a typical 1µF ceramic capacitor is in the range of 20 mΩ to 40 mΩ, which easily meets the ESR requirement for stability for
the LP5910. The temperature performance of ceramic capacitors varies by type. Most large value ceramic
capacitors ( ≥ 2.2 µF) are manufactured with Z5U or Y5V temperature characteristics, which results in the
capacitance dropping by more than 50% as the temperature goes from 25°C to 85°C.
A better choice for temperature coefficient in a ceramic capacitor is X7R. This type of capacitor is the most stable
and holds the capacitance within ±15% over the temperature range. Tantalum capacitors are less desirable than
ceramic for use as output capacitors because they are more expensive when comparing equivalent capacitance
and voltage ratings in the 1-µF to 4.7-µF range.
8.2.2.4 Capacitor Characteristics
The LP5910 is designed to work with ceramic capacitors on the input and output to take advantage of the
benefits they offer. For capacitance values in the range of 1 µF to 10 µF, ceramic capacitors are the smallest,
least expensive and have the lowest ESR values, thus making them best for eliminating high frequency noise.
The ESR of a typical 1-µF ceramic capacitor is in the range of 20 mΩ to 40 mΩ, which easily meets the ESR
requirement for stability for the LP5910.
A better choice for temperature coefficient in a ceramic capacitor is X7R. This type of capacitor is the most stable
and holds the capacitance within ±15% over the temperature range. Tantalum capacitors are less desirable than
ceramic for use as output capacitors because they are more expensive when comparing equivalent capacitance
and voltage ratings in the 1-µF to 10-µF range.
Another important consideration is that tantalum capacitors have higher ESR values than equivalent size
ceramics. This means that while it may be possible to find a tantalum capacitor with an ESR value within the
stable range, it would have to be larger in capacitance (which means bigger and more costly) than a ceramic
capacitor with the same ESR value. Also, the ESR of a typical tantalum increases about 2:1 as the temperature
goes from 25°C down to –40°C, so some guard band must be allowed.
8.2.2.5 Remote Capacitor Operation
The LP5910 requires at least a 1-µF capacitor at the OUT pin, but there is no strict requirements about the
location of the capacitor in regards to the pin. In practical designs the output capacitor may be located up to
10 cm away from the LDO. This means that there is no need to have a special capacitor close to the OUT pin if
there is already respective capacitors in the system (like a capacitor at the input of supplied part). The remote
capacitor feature helps user to minimize the number of capacitors in the system.
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As a good design practice, keep the wiring parasitic inductance at a minimum, using as wide as possible traces
from the LDO output to the capacitors, keeping the LDO output trace layer as close as possible to ground layer
and avoiding vias on the path. If there is a need to use vias, implement as many vias as possible between the
connection layers. It is recommended to keep parasitic wiring inductance less than 35 nH. For the applications
with fast load transients, an input capacitor is recommended, equal to or larger to the sum of the capacitance at
the output node, for the best load-transient performance.
8.2.2.6 No-Load Stability
The LP5910 remains stable, and in regulation, with no external load.
8.2.2.7 Enable Control
The LP5910 may be switched to an ON or OFF state by a logic input at the EN pin. A voltage on this pin greater
than VIH turns the device on, while a voltage less than VIL turns the device off.
When the EN pin is low, the regulator output is off and the device typically consumes less than 1 µA.
Additionally, an output pulldown circuit is activated which ensures that any charge stored on COUT is discharged
to ground.
If the application does not require the use of the shutdown feature, the EN pin can be tied directly to the IN pin to
keep the regulator output permanently on.
An internal 1-MΩ pulldown resistor ties the EN input to ground, ensuring that the device remains off if the EN pin
is left open circuit. To ensure proper operation, the signal source used to drive the EN pin must be able to swing
above and below the specified turn-on/off voltage thresholds listed in the Electrical Characteristics under VIL and
VIH.
Table 2. Recommended Output Capacitor Specification
PARAMETER
Output capacitor, COUT
TEST CONDITIONS
Capacitance for stability
ESR
MIN
NOM
MAX
0.7
1
10
µF
500
mΩ
5
UNIT
8.2.2.8 Power Dissipation
Knowing the device power dissipation and proper sizing of the thermal plane connected to the tab or pad is
critical to ensuring reliable operation. Device power dissipation depends on input voltage, output voltage, and
load conditions and can be calculated with Equation 1.
PD(MAX) = (VIN(MAX) – VOUT) × IOUT(MAX)
(1)
Power dissipation can be minimized, and greater efficiency can be achieved, by using the lowest available
voltage drop option that would still be greater than the dropout voltage (VDO). However, keep in mind that higher
voltage drops result in better dynamic (that is, PSRR and transient) performance.
On the WSON (DRV) package, the primary conduction path for heat is through the exposed power pad to the
PCB. To ensure the device does not overheat, connect the exposed pad, through thermal vias, to an internal
ground plane with an appropriate amount of copper PCB area .
On the DSBGA (YKA) package, the primary conduction path for heat is through the four bumps to the PCB.
The maximum allowable junction temperature (TJ(MAX)) determines maximum power dissipation allowed (PD(MAX))
for the device package.
Power dissipation and junction temperature are most often related by the junction-to-ambient thermal resistance
(RθJA) of the combined PCB and device package and the temperature of the ambient air (TA), according to
Equation 2 or Equation 3:
TJ(MAX) = TA(MAX) + (RθJA × PD(MAX))
PD(MAX) = (TJ(MAX) - TA(MAX)) / RθJA
(2)
(3)
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Unfortunately, this RθJA is highly dependent on the heat-spreading capability of the particular PCB design, and
therefore varies according to the total copper area, copper weight, and location of the planes. The RθJA recorded
in Thermal Information is determined by the specific EIA/JEDEC JESD51-7 standard for PCB and copperspreading area, and is to be used only as a relative measure of package thermal performance. For a welldesigned thermal layout, RθJA is actually the sum of the package junction-to-case (bottom) thermal resistance
(RθJCbot) plus the thermal resistance contribution by the PCB copper area acting as a heat sink.
8.2.2.9 Estimating Junction Temperature
The EIA/JEDEC standard recommends the use of psi (Ψ) thermal characteristics to estimate the junction
temperatures of surface mount devices on a typical PCB board application. These characteristics are not true
thermal resistance values, but rather package specific thermal characteristics that offer practical and relative
means of estimating junction temperatures. These psi metrics are determined to be significantly independent of
copper-spreading area. The key thermal characteristics (ΨJT and ΨJB) are given in Thermal Information and are
used in accordance with Equation 4 or Equation 5.
TJ(MAX) = TTOP + (ΨJT × PD(MAX))
where
•
•
PD(MAX) is explained in Equation 1.
TTOP is the temperature measured at the center-top of the device package.
(4)
TJ(MAX) = TBOARD + (ΨJB × PD(MAX))
where
•
•
PD(MAX) is explained in Equation 1.
TBOARD is the PCB surface temperature measured 1-mm from the device package and centered on the
package edge.
(5)
For more information about the thermal characteristics ΨJT and ΨJB, see the TI Application Report:
Semiconductor and IC Package Thermal Metrics (SPRA953), available for download at www.ti.com.
For more information about measuring TTOP and TBOARD, see the TI Application Report: Using New Thermal
Metrics (SBVA025), available for download at www.ti.com.
For more information about the EIA/JEDEC JESD51 PCB used for validating RθJA, see the TI Application Report:
Thermal Characteristics of Linear and Logic Packages Using JEDEC PCB Designs (SZZA017), available for
download at www.ti.com.
2.5
2.5
1.5
1.5
1
1
0.5
0.5
IOUT (mA)
2
VOUT (V)
VIN (V)
2
120
12
100
8
80
4
60
0
40
-4
20
-8
IOUT
'VOUT
VIN
VOUT
0
-25
VEN = VIN
0
25
50
75
Time (µs)
100
VOUT = 1.8 V
125
0
150
0
-20
-10
0
10
D021
COUT = 1 µF
VIN = 2.3 V
IOUT = 1 mA to 100 mA
Figure 26. Turnon Time
16
'VOUT (mV)
8.2.3 Application Curves
20
30
40
Time (µs)
VOUT = 1.8 V
50
60
70
-12
80
D022
COUT = 1 µF
tRISE = 10 µs
Figure 27. Load Transient Response
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9 Power Supply Recommendations
This device is designed to operate from an input supply voltage range of 1.3 V to 3.3 V. The input supply must
be well regulated and free of spurious noise. To ensure that the LP5910 output voltage is well regulated and
dynamic performance is optimum, the input supply must be at least VOUT + 0.5 V.
10 Layout
10.1 Layout Guidelines
The dynamic performance of the LP5910 is dependant on the layout of the PCB. PCB layout practices that are
adequate for typical LDOs may degrade the PSRR, noise, or transient performance of the LP5910.
Best performance is achieved by placing CIN and COUT on the same side of the PCB as the LP5910 device, and
as close as is practical to the package. The ground connections for CIN and COUT must be back to the LP5910
GND pin using as wide and as short of a copper trace as is practical.
Avoid connections using long trace lengths, narrow trace widths, and/or connections through vias. These add
parasitic inductances and resistance that results in inferior performance especially during transient conditions.
10.2 Layout Examples
IN
A1
CIN
OUT
A2
COUT
Via
B1
EN
B2
GND
Figure 28. LP5910 Typical DSBGA Layout
1
NC
2
NC
3
COUT
Thermal
Pad
OUT
6
IN
5
GND
4
EN
CIN
Figure 29. LP5910 Typical WSON Layout
10.3 DSBGA Mounting
The DSBGA package requires specific mounting techniques, which are detailed in AN-1112 DSBGA Wafer Level
Chip Scale Package (SNVA009). For best results during assembly, alignment ordinals on the PC board may be
used to facilitate placement of the DSBGA device.
10.4 DSBGA Light Sensitivity
Exposing the DSBGA device to direct light may cause incorrect operation of the device. High intensity light
sources such as halogen lamps can affect electrical performance if they are situated in close proximity to the
device. The wavelengths that have the most detrimental effect are reds and infra-reds, which means that the
fluorescent lighting used inside most buildings has little effect on performance.
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• AN-1112 DSBGA Wafer Level Chip Scale Package
• Semiconductor and IC Package Thermal Metrics
• Using New Thermal Metrics
• Thermal Characteristics of Linear and Logic Packages Using JEDEC PCB Designs
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
12-May-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LP5910-0.9YKAR
ACTIVE
DSBGA
YKA
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 125
D
LP5910-1.0DRVR
ACTIVE
WSON
DRV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
59A
LP5910-1.0YKAR
ACTIVE
DSBGA
YKA
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 125
A
LP5910-1.1YKAR
ACTIVE
DSBGA
YKA
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 125
E
LP5910-1.2YKAR
ACTIVE
DSBGA
YKA
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 125
B
LP5910-1.825YKAT
PREVIEW
DSBGA
YKA
4
250
TBD
Call TI
Call TI
-40 to 125
O
LP5910-1.8DRVR
ACTIVE
WSON
DRV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
59C
LP5910-1.8DRVT
ACTIVE
WSON
DRV
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
59C
LP5910-1.8YKAR
ACTIVE
DSBGA
YKA
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 125
C
LP5910-1.8YKAT
ACTIVE
DSBGA
YKA
4
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 125
C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
12-May-2017
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Sep-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
DSBGA
YKA
4
3000
180.0
8.4
LP5910-1.0DRVR
WSON
DRV
6
3000
180.0
LP5910-1.0YKAR
DSBGA
YKA
4
3000
180.0
LP5910-1.1YKAR
DSBGA
YKA
4
3000
LP5910-1.2YKAR
DSBGA
YKA
4
LP5910-1.8DRVR
WSON
DRV
LP5910-1.8YKAR
DSBGA
YKA
LP5910-1.8YKAT
DSBGA
YKA
LP5910-0.9YKAR
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
0.8
0.8
0.47
4.0
8.0
Q1
8.4
2.3
2.3
1.15
4.0
8.0
Q2
8.4
0.8
0.8
0.47
4.0
8.0
Q1
180.0
8.4
0.8
0.8
0.47
4.0
8.0
Q1
3000
180.0
8.4
0.8
0.8
0.47
4.0
8.0
Q1
6
3000
180.0
8.4
2.3
2.3
1.15
4.0
8.0
Q2
4
3000
180.0
8.4
0.8
0.8
0.47
4.0
8.0
Q1
4
250
180.0
8.4
0.8
0.8
0.47
4.0
8.0
Q1
Pack Materials-Page 1
W
Pin1
(mm) Quadrant
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Sep-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LP5910-0.9YKAR
DSBGA
YKA
4
3000
182.0
182.0
20.0
LP5910-1.0DRVR
WSON
DRV
6
3000
210.0
185.0
35.0
LP5910-1.0YKAR
DSBGA
YKA
4
3000
182.0
182.0
20.0
LP5910-1.1YKAR
DSBGA
YKA
4
3000
182.0
182.0
20.0
LP5910-1.2YKAR
DSBGA
YKA
4
3000
182.0
182.0
20.0
LP5910-1.8DRVR
WSON
DRV
6
3000
210.0
185.0
35.0
LP5910-1.8YKAR
DSBGA
YKA
4
3000
182.0
182.0
20.0
LP5910-1.8YKAT
DSBGA
YKA
4
250
182.0
182.0
20.0
Pack Materials-Page 2
PACKAGE OUTLINE
YKA0004
DSBGA - 0.4 mm max height
SCALE 14.000
DIE SIZE BALL GRID ARRAY
B
A
E
BALL A1
CORNER
D
0.4 MAX
C
SEATING PLANE
0.18
0.13
0.05 C
BALL TYP
0.35 TYP
B
SYMM
0.35
TYP
E: Max = 0.742 mm, Min =0.682 mm
A
4X
0.015
0.25
0.15
C A
D: Max = 0.742 mm, Min =0.682 mm
2
1
SYMM
B
4221909/A 02/2015
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
YKA0004
DSBGA - 0.4 mm max height
DIE SIZE BALL GRID ARRAY
(0.35) TYP
4X ( 0.18)
2
1
A
SYMM
(0.35) TYP
B
SYMM
LAND PATTERN EXAMPLE
SCALE:40X
( 0.18)
SOLDER MASK
OPENING
0.255 MAX
SOLDER MASK
OPENING
( 0.18)
METAL
0.255 MIN
METAL UNDER
SOLDER MASK
NON-SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
4221909/A 02/2015
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YKA0004
DSBGA - 0.4 mm max height
DIE SIZE BALL GRID ARRAY
(0.35) TYP
4X ( 0.21)
(R0.05) TYP
2
1
A
SYMM
(0.35)
TYP
B
METAL
TYP
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:40X
4221909/A 02/2015
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
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