HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5.0 V Saturated Power: +30 dBm Power Down Capability Low External Part Count Functional Diagram General Description The HMC414MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5.0V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V Vs= 3.6V Vs= 5.0V Parameter Min. Frequency Range Max. Min. 2.2 - 2.8 Gain 17 Gain Variation Over Temperature Typ. Max. 2.2 - 2.8 20 25 0.03 0.04 17 Units GHz 20 25 dB 0.03 0.04 dB/ °C Input Return Loss 3 8 3 8 dB Output Return Loss 6 9 6 9 dB Output Power for 1 dB Compression (P1dB) 21 25 23 27 dBm S a t u r a t e d O u t p u t Po w e r ( P s a t ) 23 27 26 30 dBm Output Third Order Intercept (IP3) 30 35 35 39 dBm 6.5 7.0 dB 0.002 / 240 0.002 / 300 mA 7 7 mA Noise Figure Supply Current (I c c ) Control Current (Ipd) 1 - 214 Typ. Vpd= 0V/3.6V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 3 -40 C 2 2.1 2.2 2.3 2.5 2.6 2.7 2.8 2.9 3 2.7 2.8 2.9 3 Return Loss, Vs= 5.0V 0 0 -2 -2 S11 S11 -4 S22 RETURN LOSS (dB) RETURN LOSS (dB) 2.4 FREQUENCY (GHz) Return Loss, Vs= 3.6V -6 -8 -10 -12 -14 S22 -6 -8 -10 -12 -14 -16 -16 -18 -18 -20 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.2 2.3 FREQUENCY (GHz) +25 C +85 C -40 C 2.1 2.2 2.3 2.4 2.5 2.6 FREQUENCY (GHz) 2.5 2.6 P1dB vs. Temperature, Vs= 5.0V P1dB (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.4 FREQUENCY (GHz) P1dB vs. Temperature, Vs= 3.6V P1dB (dBm) 1 +25 C +85 C FREQUENCY (GHz) -4 GHz AMPLIFIERS - SMT 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 GAIN (dB) GAIN (dB) MMIC SUB-HARMONICALLY PUMPED MIXER Vs= 17 -5.0V 25 GainGaAs vs. Temperature, Vs= 3.6V Gain vs. Temperature, 2.7 2.8 2.9 3 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 215 HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Psat (dBm) Psat (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25 C +85 C -40 C 2 2.1 2.2 Pout (dBm), GAIN (dB), PAE (%) 2 4 6 8 10 12 14 16 +25 C +85 C -40 C 2.2 2.3 2.4 2.5 2.6 FREQUENCY (GHz) 2.6 2.7 2.8 2.9 3 34 32 30 Pout 28 Gain 26 PAE 24 22 20 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 2.7 0 2 4 6 8 10 12 14 16 Output IP3 vs. Temperature, Vs= 5.0V OIP3 (dBm) OIP3 (dBm) 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 2.1 2.5 INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V 2 2.4 Power Compression@ 2.4 GHz, Vs= 5.0V INPUT POWER (dBm) 1 - 216 2.3 FREQUENCY (GHz) Power Compression@ 2.4 GHz, Vs= 3.6V 34 32 30 Pout (dBm) 28 Gain (dB) 26 PAE (%) 24 22 20 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 0 GHz 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 1 MMIC SUB-HARMONICALLY PUMPED MIXER Vs= 17 -5.0V 25 PsatGaAs vs. Temperature, Vs= 3.6V Psat vs. Temperature, 2.8 2.9 3 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 2.9 3 HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Reverse Isolation GaAs MMIC PUMPED 25 vs. Temperature, Vs=SUB-HARMONICALLY 3.6V Power DownMIXER Isolation,17 Vs=- 3.6V 1 0 0 +25 C +85 C -40 C -10 ISOLATION (dB) -10 -15 -20 -25 -20 -30 -40 -30 -50 -35 -40 -60 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2 3 2.1 2.2 2.3 FREQUENCY (GHz) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 NOISE FIGURE (dB) +85 C -40 C 2.1 2.5 2.6 2.7 2.8 2.9 3 Noise Figure vs. Temperature, Vs= 5.0V +25 C 3 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 +25 C +85 C -40 C 2 2.1 2.2 2.3 FREQUENCY (GHz) 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) Gain & Power vs. Supply voltage 34 28 27 32 Gain 26 30 25 28 24 26 24 23 P1dB 22 Psat 22 21 20 20 18 19 16 18 2.75 P1dB, Psat (dBm) GAIN dB) NOISE FIGURE (dB) Noise Figure vs. Temperature, Vs= 3.6V 2 2.4 FREQUENCY (GHz) AMPLIFIERS - SMT -5 ISOLATION (dB) GHz 14 3.25 3.75 4.25 4.75 5.25 Vcc SUPPLY VOLTAGE (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 217 HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Absolute Maximum Ratings Supply Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd) +4.0 Vdc Input Power (RFin) +20 dBm Channel Temperature (Tc) 150 °C Continuous Pdiss (T= 85 °C) (derate 27 mW/°C above 85 °C) 1.73 W Storage Temperature -65 to +150° C Operating Temperature -40 to +85° C Pin Locations & Outline Drawing 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC, SILICA & SILICONE INPREGNATED. B. LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETERS) 1 - 218 4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH USING WHITE INK, LOCATED APPROX AS SHOWN 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Pin Number Function Description 1 RF IN This pin is AC coupled and matched to 50 Ohms from 2.2 to 2.8 GHz. 2 NC Not Connected 3, 4 RF OUT RF output and DC bias for the output stage. 5 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a shor t path. Vias under the device are required. 6, 8 Vpd1, Vpd2 Power control pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 7 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 AMPLIFIERS - SMT Pin Descriptions 1 - 219 v01.1201 HMC414MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Evaluation PCB for HMC414MS8G * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 2 mm DC Header C1 2.7 pF Capacitor, 0603 Pkg. C2 100 pF Capacitor, 0402 Pkg. C3 - C6 330 pF Capacitor, 0603 Pkg. C7 2.2 µF Capacitor, Tantalum L1 18nH Inductor 0603 Pkg. U1 HMC414MS8G Amplifier PCB* 105074 Eval Board * Circuit Board Material: Rogers 4350 1 - 220 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] v01.1201 HMC414MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz HMC414MS8G Application Circuit AMPLIFIERS - SMT 1 TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.036" 0.3" 0.11" * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 221