Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. PINNING - TO220AB PIN PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance PIN CONFIGURATION DESCRIPTION 1 gate 2 drain 3 source tab SYMBOL MAX. UNIT 200 9.2 90 175 0.4 V A W ˚C Ω SYMBOL d tab g drain s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS Drain-source voltage Drain-gate voltage Gate-source voltage RGS = 20 kΩ - - 200 200 30 V V V ID ID IDM Drain current (DC) Drain current (DC) Drain current (pulse peak value) Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C - Ptot Tstg Tj Total power dissipation Storage temperature Junction Temperature Tmb = 25 ˚C - - 55 - -200A 9.2 6.5 36 -200B 8.2 5.8 33 A A A 90 175 175 W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a February 1996 CONDITIONS 1 MIN. TYP. MAX. UNIT - - 1.67 K/W - 60 - K/W Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA 200 - - V VDS = VGS; ID = 1 mA VDS = 200 V; VGS = 0 V; Tj = 25 ˚C VDS = 200 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK454-200A BUK454-200B ID = 3.5 A 2.1 - 3.0 1 0.1 10 0.35 0.4 4.0 10 1.0 100 0.4 0.5 V µA mA nA Ω Ω MIN. TYP. MAX. UNIT VGS(TO) IDSS IDSS IGSS RDS(ON) DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 3.5 A 3.5 5.0 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 700 100 50 850 160 80 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 2.9 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω - 12 45 80 40 20 70 120 60 ns ns ns ns Ld Internal drain inductance - 3.5 - nH Ld Internal drain inductance - 4.5 - nH Ls Internal source inductance Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR - - - 9.2 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage IF = 9.2 A ; VGS = 0 V - 1.1 36 1.3 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 9.2 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 100 V - 180 1.2 - ns µC MIN. TYP. MAX. UNIT - - 50 mJ AVALANCHE LIMITING VALUE Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 9 A ; VDD ≤ 100 V ; VGS = 10 V ; RGS = 50 Ω February 1996 2 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor 120 BUK454-200A/B Normalised Power Derating PD% 10 Zth / (K/W) BUKx54-lv 110 100 D= 90 80 1 0.5 70 0.2 60 50 0.1 40 0.1 0.05 30 tp PD 0.02 D= 20 10 0 0 0 20 40 60 80 100 Tmb / C 120 140 160 0.01 1E-07 180 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 1E-03 t/s 1E-01 1E+01 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% t T 1E-05 tp T 20 ID / A 110 BUK444-200A 8 10 20 VGS / V = 100 90 15 7 80 70 60 10 50 6 40 30 5 5 20 10 0 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 ID / A BUK454-200A,B ID S/ N) = VD 10 1.5 B 4 6 8 10 12 VDS / V 14 16 18 4 20 BUK454-200A RDS(ON) / Ohm A O ( DS 2 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V 100 0 5.5 4.5 5 6 6.5 7 VGS / V = 7.5 tp = 10 us 8 1.0 R 100 us 1 ms DC 1 10 0.5 10 ms 100 ms 0 0.1 1 10 100 VDS / V 1000 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp February 1996 20 0 2 4 6 8 10 12 ID / A 14 16 18 20 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 3 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor 20 BUK454-200A/B ID / A VGS(TO) / V BUK454-200A max. 4 Tj / C = 150 25 15 typ. 3 min. 10 2 5 0 1 0 0 2 4 6 8 10 -60 -20 20 VGS / V gfs / S 100 140 180 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 6 60 Tj / C BUK454-200A 5 SUB-THRESHOLD CONDUCTION ID / A 1E-01 1E-02 4 2% 1E-03 typ 98 % 3 1E-04 2 1E-05 1 1E-06 0 0 2 4 6 8 10 12 ID / A 14 16 18 0 20 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2 VGS / V 3 4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised RDS(ON) = f(Tj) a 1 10000 BUK4y4-200 C / pF 1000 Ciss 100 Coss Crss -60 -20 20 60 Tj / C 100 140 10 180 0 40 VDS / V Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.5 A; VGS = 10 V February 1996 20 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 4 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B BUK454-200 VGS / V 12 120 110 VDS / V =40 10 WDSS% 100 90 160 8 80 70 60 6 50 40 4 30 20 2 10 0 0 0 4 8 12 16 QG / nC 20 24 20 28 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 9 A; parameter VDS 20 IF / A 40 60 80 100 120 Tmb / C 140 160 180 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 9 A BUK454-200A VDD + L 15 VDS - VGS 10 -ID/100 Tj / C = 150 T.U.T. 0 5 RGS 25 R 01 shunt 0 0 1 VSDS / V 2 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj February 1996 5 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1996 6 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 7 Rev 1.000