DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD6.2MF LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (DUAL TYPE: COMMON ANODE) 3-PIN MINI MOLD This product is a low capacitance type diode developed for E.S.D. (Electrostatic Discharge) protection. Based on PACKAGE DIMENSIONS the (in millimeters) IEC61000-4-2 test on electromagnetic interference (EMI), the diode 2.8±0.2 0.4+0.1 −0.05 assures an endurance of no less than 30 kV, and capacitance is small with 20 pF TYP. This product series is the most suitable for the ESD protection in the high-speed data communication bus such 0.65 +0.1 −0.15 1.5 1 3 FEATURES • Based on the electrostatic discharge immunity test (IEC61000-4- Marking 0.16+0.1 −0.06 1.1 to 1.4 is excellent in the frequency characteristic. 0.3 2), the product assures the minimum endurance of 30 kV. • Capacitance is small with 20 pF TYP. (at VR = 0 V, f = 1 MHz). It 0 to 0.1 APPLICATIONS • External interface circuit E.S.D. protection in the high-speed data communication bus such as USB. PIN CONNECTION MAXIMUM RATINGS (TA = 25°°C) Power Dissipation 0.4+0.1 −0.05 0.95 having allowable power dissipation of 200 mW. 2 0.95 NNCD6.2MF include two elements in 3-PIN Mini Mold Package 2.9±0.2 as USB. P 200 mW (Total) Surge Reverse Power PRSM 2 W (t = 10 µs 1 pulse) Fig.5 Junction Temperature Tj 150°C Storage Temperature Tstg −55°C to +150°C 1. K1 : Cathode 1 SC-59 (EIAJ) 2. K2 : Cathode 2 3. A : Anode (common) K2 3 2 A 1 K1 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14147EJ2V0DS00 (2nd edition) Date Published February 2000 N CP(K) Printed in Japan © 1999 NNCD6.2MF ELECTRICAL CHARACTERISTICS (TA = 25°°C) (A-K1, A-K2) Note 1 Breakdown Voltage VBR (V) Type No. MIN. NNCD6.2MF 5.7 Dynamic Note 2 Impedance ZZ (Ω) Reverse Leakage IR (µA) MAX. IT (mA) MAX. IT (mA) MAX. 6.7 5 50 5 Capacitance Ct (pF) VR (V) TYP. 3.0 20 2 TEST CONDITION VR = 0 V f = 1 MHz E.S.D Voltage (kV) MIN. TEST CONDITION 30 C = 150 pF R = 330 Ω (IEC61000-4-2) Note 1. Tested with pulse (40 ms) 2. ZZ is measured at IT give a small A.C. signal. TYPICAL CHARACTERISTICS (TA = 25°°C) Fig. 1 POWER DISSIPATION vs. Fig. 2 IT vs. VBR CHARACTERISTICS AMBIENT TEMPERATURE 200 100 m 30 × 30 × 1.6 P.C.B. (Glass Epoxy) NNCD6.2MF 150 If – On State Current – A P – Power Dissiipation – mW 250 100 50 0 0 25 50 75 100 125 TA – Ambient Temperature – °C 10 m 1m 100 µ 150 10 µ 5 6 7 VBR – Breakdown Voltage – V 2 Data Sheet D14147EJ2V0DS00 8 NNCD6.2MF Fig. 3 Ct-VR CHARACTERISTICS Ct – Capacitance between the terminal – pF 40 f = 1MHz 30 20 NNCD6.2MF 10 0.1 1.0 10 VR – Reverse Voltage – V Zth – Transient Themal Impedance – °C/W Fig. 4 TRANSIENT THERMAL IMPEADANCE CHARACTERISTIC 5000 1000 625°C/W NNCD6.2MF 100 10 5 1m P.C.B. (Giass Epoxy) (30 mm × 30 mm × 1.6 mm) 10 m 100 m 1 10 100 t – Time – s Fig. 5 SURGE REVERSE POWER RATINGS TA = 25 °C Non Repetitive PRSM PRSM – Surge Reverse Power – W 50 10 tT NNCD6.2MF 1 0.5 1µ 10 µ 100 µ 1m 10 m 100 m t – Pulse Width – s Data Sheet D14147EJ2V0DS00 3 NNCD6.2MF [MEMO] • The information in this document is subject to change without notice. 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