BL GALAXY ELECTRICAL SILICON BRIDGE RECTIFIERS EDB101 --- EDB106 VOLTAGE RANGE: 50 --- 400 V CURRENT: 1.0 A DB-1 FEATURES Rating to 400V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board .255(6.5) .310(7.9) .350(8.9) .245(6.2) .290(7.4) .300(7.6) Reliable low cost construction utilizing molded Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, solderde plated .365(9.3) .355(9.0) Plastic material has UL flammability classification .135(3.4) .155(2.9) 94V-O .060(1.5) .165(4.2) .155(3.9) .020(.51) .016(.41) Polarity symbols molded on body .205(5.2) .195(5.0) Weight: 1.0 grams inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EDB 101 EDB 102 EDB 103 EDB 104 EDB 105 EDB 106 UNITS Maximum recurrent peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 V Maximum average forw ard Output current @TA =55 IF(AV) 1.0 A IFSM 30.0 A VF 1.0 V 10.0 μA 1.0 mA 50 nS Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 IR Maximum reverse recovery time (NOTE 1) trr Typical junction calacitance CJ (NOTE 2) Operating junction temperature range Storage temperature range 15 10 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 NOTE: 1. Test conditions: I F =0.5A, I R=-1.0A, I RR=-0.25A. 2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts. Document Number 0287009 BLGALAXY ELECTRICAL pF www.galaxycn.com 1. RATINGS AND CHARACTERISTIC CURVES EDB101 --- EDB106 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE 0 PULSE GENERATOR (NOTE2) -0.25A -1.0A 1cm NOTES:1.RISE TIME =7ns MAX. INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5OΩ TJ=100 1.0 TJ=25 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 60 0 0 25 50 75 100 125 150 ) 10 1 .0 0 .1 .0 1 TJ=125 P u lse W id th =300u S .0 0 1 0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 8.3ms Single Half Sine Wave TJ=25 40 30 20 10 1 5 10 50 JUNCTION CAPACITANCE, (pF) 200 50 AMPERSE PEAK FORWARD SURGE CURRENT, 1 FIG.6 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 Single phaes half wave 60Hz resistive or inductive load FIG.4 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERSE TJ=150 10 AMPERSE INSTANTANEOUS REVERSE CURRENT, 100 2 AMBIENT TEMPERATURE ( SET TIME BASE FOR 10 ns /cm FIG.3 -- TYPICAL REVERSE CHARACTERISTICS 0.1 FIG.2 -- TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, AMPERSE FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC TJ=25 100 60 40 20 EDB101-EDB104 10 6 EDB105-EDB106 4 2 1 .1 1 4 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE, VOLTS www.galaxycn.com Document Number 0287009 BLGALAXY ELECTRICAL 2.