Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3306] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05 0.2 1.9 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Conditions Ratings Unit VDSS VGSS –60 V ±20 V ID –1 A Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation Mounted on a ceramic board (900mm2×0.8mm) Channel Temperature PD Tch Storage Temperature Tstg –4 A 1 150 W ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions ID=–1mA, VGS=0 Ratings min typ max –60 V VDS=–60V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA –1.0 0.8 RDS(on)1 VDS=–10V, ID=–0.5A ID=–0.5A, VGS=–10V Unit –10 µA ±10 µA –2.4 V 620 800 mΩ 1150 mΩ 1.1 S RDS(on)2 ID=–0.3A, VGS=–4V 800 Input Capacitance Ciss 130 pF Output Capacitance Coss VDS=–20V, f=1MHz VDS=–20V, f=1MHz 35 pF Reverse Transfer Capacitance Crss VDS=–20V, f=1MHz 9 pF Continued on next page. Marking : JF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30100TS (KOTO) TA-2307 No.6438-1/4 CPH3306 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See specified Test Circuit 8 ns tr See specified Test Circuit 6 ns td(off) See specified Test Circuit 23 ns tf See specified Test Circuit 8 ns Qg VDS=–10V, VGS=–10V, ID=–1A 5 nC 0.8 nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=–10V, VGS=–10V, ID=–1A VDS=–10V, VGS=–10V, ID=–1A Diode Forward Voltage VSD IS=–1A, VGS=0 0.9 nC –0.81 –1.2 V Switching Time Test Circuit VDD=--30V VIN 0V --10V ID=--0.5A RL=60Ω VIN D PW=10µs D.C.≤1% VOUT G P.G 50Ω CPH3306 ID -- VGS --2.0 Drain Current, ID – A --3.0V --0.6 --0.4 VGS=--2.5V --1.4 75° --5 .0V --4 .0V .0V --0.8 --1.6 V .5 --3 --10 Drain Current, ID – A --8.0V --6.0V Ta=-2 --1.8 --1.0 C 5°C VDS=--10V 25° ID -- VDS --1.2 C S --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS – V --1.8 --2.0 0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT01191 RDS(on) -- Ta 1400 Ta=25°C 1200 1200 1000 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ Static Drain-to-Source On-State Resistance, RDS (on) – mΩ --1.0 Gate-to-Source Voltage, VGS – V RDS(on) -- VGS 1400 --0.5 IT01190 --0.5A ID=--0.3A 800 600 400 200 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS – V --18 --20 IT01192 4V -S= , VG 1000 A 0.3 -I D= 800 0V =--1 GS A, V .5 --0 I D= 600 400 200 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta – °C 120 140 160 IT01193 No.6438-2/4 CPH3306 yfs -- ID 2 =-Ta °C 75 0.1 7 5 2 --0.1 7 5 3 3 2 2 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 --0.01 --0.3 5 7 --10 7 5 td(off) 2 tf 10 td(on) 7 5 tr 3 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD – V --1.2 IT01195 Ciss, Coss, Crss -- VDS 1000 7 5 VDD=--30V VGS=--10V 3 --0.4 IT01194 SW Time -- ID 100 Switching Time, SW Time – ns 3 C 3 2 2 C 25°C ° 25 7 5 --25° 5°C --1.0 Ta= 75° C 1.0 7 5 Forward Current, IF – A 2 Drain Current, ID – A f=1MHz 3 2 Ciss 100 7 5 Coss 3 2 Crss 10 7 5 3 2 2 1.0 1.0 7 2 --0.1 3 5 7 2 --1.0 Drain Current, ID – A --20 --30 --40 --50 Drain-to-Source Voltage, VDS – V IT01196 --10 7 5 VDS=--10V ID=--1A --9 --10 0 3 VGS -- Qg --10 --8 --7 --6 --5 --4 --3 --2 ≤10µs 10 0µ 1m s 10 s m s IDP=--4A 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Total Gate Charge, Qg – nC 5.0 IT01198 ID=--1A --1.0 10 7 5 0m DC 3 2 s op era Operation in this area is limited by RDS(on). --0.1 7 5 3 2 --1 --60 IT01197 ASO 3 2 Drain Current, ID – A Gate-to-Source Voltage, VGS – V VGS = 0 3 3 0.01 --0.001 2 3 tio n Ta=25°C 1 Pulse Mounted on a ceramic board (900mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS – V 3 5 7 --100 IT01199 PD -- Ta 1.2 Allowable Power Dissipation, PD – W IF -- VSD 5 VDS=--10V 7 5 Ciss, Coss, Crss -- pF Forward Transfer Admittance, | yfs | – S 10 1.0 M ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 90 0.4 0m m2 ×0 .8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT01200 No.6438-3/4 CPH3306 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6438-4/4