MP02X130 Series MP02X130 Series Phase Control Dual SCR, SCR/Diode Modules Replaces January 2000 version, DS4477-4.0 DS4477-5.0 August 2001 FEATURES KEY PARAMETERS ■ Dual Device Module VDRM 2000V ■ Electrically Isolated Package ITSM 4000A ■ Pressure Contact Construction IT(AV)(per arm) 134A ■ International Standard Footprint Visol 3000V ■ Alumina (non-toxic) Isolation Medium Code Circuit APPLICATIONS HBT ■ Motor Control ■ Controlled Rectifier Bridges HBP ■ Heater Control HBN ■ AC Phase Control Fig.1 Circuit diagrams VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM Conditions MP02X130-20 2000 Tvj = 125oC MP02X130-18 1800 IDRM = IRRM = 30mA MP02X130-16 1600 1 2 3 VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Module type code: MP02. For further information see Package Details. Order As: MP02HBT130-20 or MP02HBT130-18 or MP02HBT130-16 Fig. 2 Electrical connections - (not to scale) MP02HBP130-20 or MP02HBP130-18 or MP02HBP130-16 MP02HBN130-20 or MP02HBN130-18 or MP02HBN130-16 Note: When ordering, please use the complete part number. 1/8 www.dynexsemi.com MP02X130 Series ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) IT(RMS ITSM I2t ITSM I2t Visol Test Conditions Parameter Mean on-state current RMS value Max. Units Tcase = 75˚C 134 A Tcase = 85˚C 112 A 210 A 10ms half sine, Tj = 125˚C 4.0 kA VR = 0 80 x 103 A2s 10ms half sine, Tj = 125˚C 3.2 kA VR = 50% VDRM 51.2 x 103 A2s 3000 V Half wave resistive load Tcase = 75˚C Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltage THERMAL AND MECHANICAL RATINGS Test Conditions Parameter Symbol Min. Max. Units Thermal resistance - junction to case dc - 0.21 ˚C/kW (per thyristor or diode) Half wave - 0.22 ˚C/kW 3 Phase - 0.23 ˚C/kW Thermal resistance - case to heatsink Mounting torque = 5Nm - 0.07 ˚C/kW (per thyristor or diode) with mounting compound Tvj Virtual junction temperature Reverse (blocking) - 125 ˚C Tstg Storage temperature range –40 125 ˚C Rth(j-c) Rth(c-hs) - - Screw torque Weight (nominal) Mounting - M6 - 6 (55) Nm (lb.ins) Electrical connections - M6 - 5 (44) Nm (lb.ins) - - 350 g 2/8 www.dynexsemi.com MP02X130 Series DYNAMIC CHARACTERISTICS - THYRISTOR Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tj = 125˚C - 30 mA dV/dt Linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 400A, - 500 A/µs IRRM/IDRM Repetitive 50Hz gate source 20V, 20Ω, tr = 0.5µs, Tj = 125˚C VT(TO) rT Threshold voltage At Tvj = 125˚C. See note 1 - 1.25 V On-state slope resistance At Tvj = 125˚C. See note 1 - 1.33 mΩ Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 200 mA VGD Gate non-trigger voltage VDRM = 5V, Tcase = 25oC 0.2 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 4 A PGM Peak gate power See table fig. 5 16 W PG(AV) Mean gate power 3 W - - 3/8 www.dynexsemi.com MP02X130 Series 8 1000 Tj = 125˚C Instantaneous on-state current, IT - (A) 800 600 400 200 0 0 6 60 5 50 4 40 3 I2t 30 2 20 1 10 0 1 1.0 2.0 3.0 Instantaneous on-state voltage, VT - (V) 4.0 10 ms 1 I2t value - (A2s x 103) Peak half sine wave on-state current - (kA) 7 0 50 2 3 45 cycles at 50Hz Duration Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 125˚C) 0.3 50 Rth(j-hs) PGM = 16W 0.1 0.01 Tj = –40˚C Tj = 25˚C Thermal impedance - (˚C/W) 1 Tj = 125˚C Gate voltage, VG - (V) 10 0.1 1 Gate current, IG - (A) Fig. 5 Gate characteristics 10 Rth(j-c) 0.2 0.1 0 0.001 0.010 0.100 1.0 Time - (s) 10 100 Fig. 6 Transient thermal impedance - dc 4/8 www.dynexsemi.com MP02X130 Series 300 300 180˚ On-state power loss per arm - (W) On-state power loss per arm - (W) 180˚ 120˚ 200 90˚ 60˚ 30˚ 100 0 0 25 50 75 100 125 Mean on-state current, IT(AV) - (A) 120˚ 200 60˚ 30˚ 100 0 0 150 120 Maximum permissible case temperature - (˚C) 120 Maximum permissible case temperature - (˚C) 140 100 80 60 40 90˚ 30˚ 25 60˚ 120˚ 50 75 100 125 Mean on-state current, IT(AV) - (A) 50 75 100 125 150 Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 140 0 0 25 Mean on-state current, IT(AV) - (A) Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz 20 d.c. 90˚ 100 d.c. 80 60 40 20 180˚ 150 Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz 30˚ 0 0 25 60˚ 90˚ 120˚ 50 75 100 125 Mean on-state current, IT(AV) - (A) 180˚ 150 Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 5/8 www.dynexsemi.com MP02X130 Series 600 0.15 0.12 0.10 0.08 0.04 0.02 Rth(hs-a) ˚C/W 500 R - Load 0.20 L - Load Total power - (W) 400 300 0.30 0.40 200 100 0 0 20 40 60 80 100 0 20 40 60 80 100 120 140 160 180 200 D.C. output current - (A) Maximum ambient temperature - (˚C) Fig. 11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) 600 0.15 0.12 0.10 0.08 500 0.04 0.02 Rth(hs-a) ˚C/W R & L- Load 0.20 Total power - (W) 400 0.30 300 0.40 200 100 0 0 20 40 60 80 100 Maximum ambient temperature - (˚C) 0 20 40 60 80 100 120 140 160 D.C. output current - (A) 180 200 Fig. 12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) 6/8 www.dynexsemi.com MP02X130 Series PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 23 23 24 15 2 holes Ø6.5 K2 5 G2 K2 G2 2 3 24 34 12.8 1 Circuit type: HBN G1 K1 13 K1 80 3x M6 1 2 G1 1 2 3 3 Circuit type: HBP 30 G1 K1 K2 G2 1 2 3 Circuit type: HBT 94 Nominal weight: 350g Recommended fixings for mounting: M6 socket head cap screws Recommended mounting torque: 6Nm (55lb.ins) Recommended torque for electrical connections: 5Nm (44lb.ins) Maximum torque for electrical connections: 8Nm (70lb.ins) Module outline type code: MP02 MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base temperature at 75˚C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or ‘T’ slots) in the heatsink. Fit and finger tighten the recommended fixing bolts at each end. Using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6Nm (55lbs.ins) is reached on all bolts at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. 7/8 www.dynexsemi.com MP02X130 Series POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4477-5 Issue No. 5.0 August 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com