PD - 90713E IRHE7230 JANSR2N7262U 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) REF: MIL-PRF-19500/601 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7230 100K Rads (Si) IRHE3230 300K Rads (Si) RDS(on) 0.35Ω 0.35Ω ID 5.5A 5.5A QPL Part Number JANSR2N7262U JANSF2N7262U IRHE4230 600K Rads (Si) 0.35Ω 5.5A JANSG2N7262U IRHE8230 1000K Rads (Si) 0.35Ω 5.5A JANSH2N7262U International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. LCC - 18 Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 5.5 3.5 22 25 0.2 ±20 240 — — 5.0 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( for 5s) 0.42 (Typical) C g For footnotes refer to the last page www.irf.com 1 02/01/01 IRHE7230, JANSR2N7262U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 200 — — V — 0.25 — V/°C — — 2.0 2.5 — — — — — — — — 0.35 0.36 4.0 — 25 250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 100 -100 50 10 25 25 40 60 45 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1100 250 55 — — — Test Conditions VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 3.5A VGS = 12V, ID = 5.5A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 3.5A VDS= 160V,VGS=0V VDS = 160V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 5.5A VDS = 100V Ω V S( ) Ω µA nA nC VDD = 100V, ID = 5.5A, VGS = 12V, RG = 7.5Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 5.5 22 1.4 400 3.0 Test Conditions A V nS µC Tj = 25°C, IS = 5.5A, VGS = 0V ➃ Tj = 25°C, IF = 5.5A, di/dt ≥ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min Typ Max Units — — — 19 5.0 — °C/W Test Conditions Solder to a copper clad PC Board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHE7230, JANSR2N7262U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (LCC-18) Diode Forward Voltage ➃ 600 to 1000K Rads (Si)2 Units Test Conditions Min Max Min 200 2.0 — — — — — 4.0 100 -100 25 0.35 200 1.25 — — — — — 4.5 100 -100 50 0.48 nA µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =3.5A — 0.35 — 0.48 Ω VGS = 12V, ID =3.5A — 1.4 1.4 V VGS = 0V, IS = 5.5A — Max V 1. Part number IRHE7230 (JANSR2N7262U) 2. Part numbers IRHE3230 (JANSF2N7262U), IRHE4230 (JANSG2N7262U) and IRHE8230 (JANSH2N7262U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range VDS(V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 190 180 170 125 — 39 100 100 100 50 — 200 VDS 150 Cu Br 100 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHE7230, JANSR2N7262U Post-Irradiation Pre-Irradiation Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure www.irf.com Post-Irradiation Pre-Irradiation IRHE7230, JANSR2N7262U Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure www.irf.com Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit 5 RadiationPost-Irradiation Characteristics Pre-Irradiation IRHE7230, JANSR2N7262U Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc Fig 10. Typical Output Characteristics Pre-Irradiation Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) 6 www.irf.com Radiation Characteristics Pre-Irradiation IRHE7230, JANSR2N7262U Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc Fig 14. Typical Output Characteristics Pre-Irradiation Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) www.irf.com 7 IRHE7230, JANSR2N7262U Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHE7230, JANSR2N7262U Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED BY R I D , Drain Current (A) DS(on) 10us 10 100us 1ms 1 10ms 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com Fig 25. Maximum Safe Operating Area 9 IRHE7230, JANSR2N7262U Pre-Irradiation RD VDS VGS D.U.T. RG + -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 27a. Switching Time Test Circuit VDS 90% 10% VGS Fig 26. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 27b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 0.00001 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHE7230, JANSR2N7262U 1 5V L VD S D .U .T RG IA S VGS 20V D R IV E R + - VD D A 0 .0 1 Ω tp Fig 29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 29b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 30a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 30b. Gate Charge Test Circuit 11 IRHE7230, JANSR2N7262U Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 15.9mH Peak IL = 5.5A, VGS = 12V ➂ ISD ≤ 5.5A, di/dt ≤ 120A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — LCC-18 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/01 12 www.irf.com