BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.100Ω (BUZ21) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (19A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 100V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.100 • High Input Impedance Ohm, N- Formerly developmental type TA9854. • Majority Carrier Device Channel • Related Literature Power Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ21 TO-220AB BUZ21 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, TO220AB) SOURCE /Creator DRAIN () GATE /DOCIN DRAIN (FLANGE) FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ21 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ21 100 100 19 75 ±20 75 230 0.6 -55 to 150 E 55/150/56 UNITS V V A A V W mJ W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 100 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V - 20 250 µA - 100 1000 µA Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 9A, VGS = 10V (Figure 8) - 0.09 0.1 Ω gfs VDS = 25V, ID = 9A (Figure 11) 4 8 - S VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω, RL = 10Ω. (Figures 16, 17) - 30 45 ns Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time TJ = 25oC, VDS = 100V, VGS = 0V TJ = 125oC, VDS = 100V, VGS = 0V - 50 75 ns td(OFF) - 170 220 ns tf - 80 110 ns - 1500 2000 pF pF Fall Time Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) Output Capacitance COSS - 450 700 Reverse Transfer Capacitance CRSS - 150 240 pF Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR MIN TYP MAX TC = 25oC TEST CONDITIONS - - 19 A TC = 25oC TJ = 25oC, ISD = 38A, VGS = 0V TJ = 25oC, ISD = 19A, dISD/dt = 100A/µs, - - 75 A - 1.5 2.1 V - 200 - ns VR = 30V - 0.25 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 50Ω, IPEAK = 28A. (See Figures 14 and 15). 2 UNITS BUZ21 Unless Otherwise Specified 1.2 30 1.0 25 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 VGS ≥ 10V 20 15 10 5 0.2 0 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) ZθJC, TRANSIENT THERMAL IMPEDANCE 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 50 0 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 0 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 40 1.5µs 101 100 10-1 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10µs 100µs 1ms OPERATION IN THIS AREA LIMITED MAY BE BY rDS(ON) 10ms 100ms DC 10V 20V PD = 75W VGS = 80V VGS = 7.5V 30 VGS = 7.0V VGS = 6.5V 20 VGS = 6.0V VGS = 5.5V 10 VGS = 5.0V VGS = 4.5V VGS = 4.0V TC = 25oC TJ = MAX RATED 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 0 0 2 4 6 8 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 12 BUZ21 Unless Otherwise Specified (Continued) 0.4 25 PULSE DURATION = 80µs VDS = 25V 20 15 TJ = 25oC 10 PULSE DURATION = 80µs rDS(ON), ON-STATE RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 5 VGS = 5V 5 VGS, GATE TO SOURCE VOLTAGE (V) 0 8V 9V 10V 20V 0 10 0.10 0.05 3 2 1 0 -50 0 50 100 -50 150 0 TJ, JUNCTION TEMPERATURE (oC) 10 COSS CRSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 gfs, TRANSCONDUCTANCE (S) CISS 10-1 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE PULSE DURATION = 80µs VDS = 25V VGS = 0, f = 1MHz 100 50 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE C, CAPACITANCE (nF) 40 4 0 0 20 30 ID, DRAIN CURRENT (A) VDS = VGS, ID = 1mA 0.15 10-2 7.5V 5 VGS = 10V, ID = 9A PULSE DURATION = 80µs 0.20 101 7V FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT GATE THRESHOLD VOLTAGE rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 0.25 6.5V 0.1 10 FIGURE 6. TRANSFER CHARACTERISTICS 6V 0.2 0 0 5.5V 0.3 8 TJ = 25oC 6 4 2 0 0 5 10 15 ID, DRAIN CURRENT (A) 20 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 25 BUZ21 Unless Otherwise Specified (Continued) 102 15 PULSE DURATION = 80µs TJ = 150oC 101 TJ = 25oC 100 10-1 0 0.5 ID = 21A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) Typical Performance Curves 1.0 1.5 2.0 2.5 VDS = 20V 10 VDS = 80V 5 0 3.0 0 10 20 30 40 Qg(TOT) , TOTAL GATE CHARGE (nC) VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 50 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS tP L VDS IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VDD + RG VDD - VGS DUT tP 0V 0 IAS 0.01Ω tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 16. SWITCHING TIME TEST CIRCUIT 5 10% 50% 50% PULSE WIDTH FIGURE 17. RESISTIVE SWITCHING WAVEFORMS BUZ21 Test Circuits and Waveforms (Continued) VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2µF VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT 6 Ig(REF) 0 FIGURE 19. GATE CHARGE WAVEFORMS