ALD ALD110814 Quad/dual n-channel enhancement mode epad matched pair mosfet array Datasheet

e
ADVANCED
LINEAR
DEVICES, INC.
EN
APPLICATIONS
ALD110814/ALD110914 are monolithic quad/dual N-Channel MOSFETs
matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
The ALD110814/ALD110914 MOSFETs are designed and built with exceptional device electrical characteristics matching. Since these devices
are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. Each device is versatile as a circuit element and is a
useful design component for a broad range of analog applications. They
are basic building blocks for current sources, differential amplifier input
stages, transmission gates, and multiplexer applications. For most applications, connect V- and N/C pins to the most negative voltage potential in
the system and V+ pin to the most positive voltage potential (or left open
unused). All other pins must have voltages within these voltage limits.
The ALD110814/ALD110914 devices are built for minimum offset voltage
and differential thermal response, and they are designed for switching
and amplifying applications in +1.5V to +10V systems where low input
bias current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment.
PIN CONFIGURATION
ALD110814
N/C*
The ALD110814/ALD110914 are suitable for use in precision applications
which require very high current gain, beta, such as current mirrors and
current sources. The high input impedance and the high DC current gain
of the Field Effect Transistors result in extremely low current loss through
the control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example, DC
beta of the device at a drain current of 3mA and input leakage current of
30pA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +1.4V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 10mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
ALD110814PC
ALD110814SC
AB
LE
D
VGS(th)= +1.4V
GENERAL DESCRIPTION
16-Pin
SOIC
Package
®
ALD110814/ALD110914
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
MATCHED PAIR MOSFET ARRAY
16-Pin
Plastic Dip
Package
TM
EPAD
8-Pin
Plastic Dip
Package
ALD110914PA
8Pin
SOIC
Package
1
GN1
2
DN1
3
S12
4
V-
5
DN4
6
GN4
7
N/C*
8
V-
V-
M1
M2
V+
VM4
M3
16
N/C*
15
GN2
14
DN2
13
V+
12
S34
11
DN3
10
9
V-
V-
GN3
N/C*
PC, SC PACKAGES
ALD110914
N/C*
1
GN1
2
DN1
3
S12
4
V-
V-
M1
M2
V-
8
N/C*
7
GN2
6
DN2
5
V-
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
ALD110914SA
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110814 / ALD110914
Parameter
Symbol
Min
1.38
Typ
Max
Unit
Test Conditions
1.40
1.42
V
IDS =1µA
VDS = 0.1V
10
mV
IDS =1µA
Gate Threshold Voltage
VGS(th)
Offset Voltage
VGS(th)1-VGS(th)2
VOS
3
Offset VoltageTempco
TC ∆VOS
5
µV/ °C
VDS1 = VDS2
GateThreshold Voltage Tempco
TC∆VGS(th)
-1.7
0.0
+1.6
mV °C
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
On Drain Current
IDS (ON)
12.0
3.0
mA
VGS = +10.6V
VGS = + 5.4V
VDS = + 5V
Forward Transconductance
GFS
1.4
mmho
VGS = +5.4V
VDS = +10.4V
Transconductance Mismatch
∆GFS
1.8
%
Output Conductance
GOS
68
µmho
Drain Source On Resistance
RDS (ON)
500
Ω
VDS = 0.1V
VGS = +4.0V
Drain Source On Resistance
Mismatch
∆RDS (ON)
0.5
%
VDS = 0.1V
VGS = +5.4V
Drain Source Breakdown Voltage
BVDSX
V
IDS = 1.0µA
VGS = -0.4V
Drain Source Leakage Current1
IDS (OFF)
Gate Leakage Current1
10
VGS = + 5.4V
VDS = +10.4V
10
100
4
pA
nA
VGS = +0.4V
VDS =10V, TA = 125°C
IGSS
3
30
1
pA
nA
VDS = 0V VGS = 10V
TA =125°C
Input Capacitance
CISS
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
pF
Turn-on Delay Time
ton
10
ns
V+ = 5V RL= 5KΩ
Turn-off Delay Time
toff
10
ns
V+ = 5V RL= 5KΩ
60
dB
f = 100KHz
Crosstalk
Notes:
1
Consists of junction leakage currents
ALD110814/ALD110914
Advanced Linear Devices
2
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