MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Features MAGX-000245-014000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/W Package RoHS* Compliant +50V Typical Operation MTTF = 600 years (TJ < 200°C) Primary Applications RF Lighting RF Plasma Generation RF Heating RF Drying Material Processing Power Industrial Equipment ISM Broadcast MILCOM Datalinks Air Traffic Control Radar - Commercial Weather Radar - Commercial Military Radar - Military Description The MAGX-000245-014000 is a gold metalized unmatched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for CW applications centered at 2.45GHz for application in ISM/Broadcast/Plasma applications. This product differentiates itself from other GaN power transistors in that it runs well in CW. The matching network is compact and small. The frequency of operation covers DC - 2.5 GHz which captures commercial as well as military applications. This product is designed as a high power driver amplifier or final stage depending on the application. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-000245 -014000 is constructed using a thermally enhanced Cu/W flanged ceramic package which provides excellent thermal performance. 1 Ordering Information Part Number Description MAGX-000245-014000 Bulk Packaging MAGX-S00245-014000 Sample Board (2.45 GHz) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Electrical Specifications1: Freq. = 2450 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = +50 V, IDQ = 15 mA, CW Operation Input Power POUT= 14 W PIN - 0.43 0.58 W Power Gain POUT= 14 W GP 13.8 15.2 - dB Drain Efficiency POUT= 14 W ηD 55 57 - % nd POUT= 14 W 2Fc - -50 - dBc rd 3 Harmonics POUT= 14 W 3Fc - -49 - dBc Load Mismatch Stability POUT= 14 W VSWR-S - 5:1 - - Load Mismatch Tolerance POUT= 14 W VSWR-T - 10:1 - - 2 Harmonics Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units IDS - - 750 µA VGS (TH) -5 -3 -2 V DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage VDS = 5 V, ID = 2 mA Forward Transconductance VDS = 5 V, ID = 500 mA GM 0.35 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 4.4 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 1.9 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.2 - pF Dynamic Characteristics Correct Device Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (+50V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 2 1. Electrical Specifications measured in MACOM RF evaluation board. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Absolute Maximum Ratings2,3,4 Parameter Limit Supply Voltage (VDD) +65 V Supply Voltage (VGG) -8 to 0 V Supply Current (IDMAX) for CW Operation at VDD = +65 V 800 mA Input Power (PIN) for CW Operation at VDD = +50 V PIN (nominal) + 3 dB Absolute Max. Junction/Channel Temperature 200ºC Power Dissipation at 85ºC for CW Operation at VDD = +50 V 11.2 W MTTF (TJ < 200°C) Thermal Resistance, (TJ = 200ºC) VDD = 50 V, IDQ = 15 mA, CW Operation 600 years 8.5ºC/W Operating Temperature -40 to +95ºC Storage Temperature -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 150 V ESD Min. - Human Body Model (HBM) 500 V 2. Operation of this device above any one of these parameters may cause permanent damage. 3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 4. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Test Fixture Assembly (2450 MHz, CW Operation) Test Fixture Impedances F (MHz) ZIF (Ω) ZOF (Ω) 2450 0.7 +j1.0 17.9 + j15.5 Parts List 4 Reference Designator Part Vendor C1 C2 C13 C3, C4 C8, C11 C5, C15 C6 C7 C17 C9 C10, C12 L1 R1 R2 R3 R4 C14, L2, L6, R6 J1, J2 0402, 0.1 µF, X7R, 10%, 16 V 0402, 10 nF, X7R, 10%, 50 V 0805, 0.1 µf, X7R, 10%, 100 V 0402, 12 pF, ±1%, 200 V 0603, 12 pF, ±2%, 250 V 0402, 2.2 pF, ±0.1 pF , 200 V 0402, 3.9 pF, ±0.1 pF , 200 V 0603, 2.4 pF, ±0.05 pF, 250 V 100 µF, 160 V, Electrolytic Capacitor 0603, 1.5 pF, ±0.05 pF, 250 V Do Not Populate 10 nH, 0402, 2% 200 Ω, 0402, 5% 3 KΩ, 0402, 5%, 11 Ω, 0402, 1% 2.2 Ω, 1206, 1% Copper Shorting Tab SMA Connector Murata Murata TDK ATC ATC ATC ATC ATC Panasonic ATC Coilcraft Panasonic Panasonic Panasonic Panasonic MACOM Tyco Electronics Contact factory for Gerber file or additional circuit information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Application Section Typical Performance Curves 2450 MHz, VDD = 50 V, IDQ = 15 mA, CW Operation, TA = 25°C Output Power vs. Input Power Gain vs. Output Power Drain Efficiency vs. Output Power 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Outline Drawing MAGX-000245-014000 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298