Fairchild FM27C010N120 1,048,576-bit 128k x 8 high performance cmos eprom Datasheet

FM27C010
1,048,576-Bit (128K x 8) High Performance
CMOS EPROM
General Description
The FM27C010 is manufactured using Fairchild’s advanced CMOS
AMG™ EPROM technology.
The FM27C010 is a high performance, 1,048,576-bit Electrically
Programmable UV Erasable Read Only Memory. It is organized
as 128K-words of 8 bits each. Its pin-compatibility with byte-wide
JEDEC EPROMs enables upgrades through 8 Mbit EPROMs.
The “Don’t Care” feature during read operations allows memory
expansions from 1M to 8M bits with no printed circuit board
changes.
The FM27C010 is one member of a high density EPROM Family
which range in densities up to 4 Megabit.
Features
■ High performance CMOS
— 70 ns access time
■ Fast turn-off for microprocessor compatibility
The FM27C010 can directly replace lower density 28-pin EPROMs
by adding an A16 address line and VCC jumper. During the normal
read operation PGM and VPP are in a “Don’t Care” state which
allows higher order addresses, such as A17, A18, and A19 to be
connected without affecting the normal read operation. This
allows memory upgrades to 8M bits without hardware changes.
The FM27C010 is also offered in a 32-pin plastic DIP with the
same upgrade path.
■ Simplified upgrade path
— VPP and PGM are “Don’t Care” during normal read
operation
■ Manufacturers identification code
■ Fast programming
■ JEDEC standard pin configurations
— 32-pin PDIP package
— 32-pin PLCC package
— 32-pin CERDIP package
The FM27C010 provides microprocessor-based systems extensive storage capacity for large portions of operating system and
application software. Its 70 ns access time provides no-wait-state
operation with high-performance CPUs. The FM27C010 offers a
single chip solution for the code storage requirements of 100%
firmware-based equipment. Frequently-used software routines
are quickly executed from EPROM storage, greatly enhancing
system utility.
Block Diagram
Data Outputs O0 - O7
VCC
GND
VPP
OE
CE
PGM
Output Enable,
Chip Enable, and
Program Logic
Output
Buffers
..
Y Decoder
1,048,576-Bit
Cell Matrix
.......
A0 - A16
Address
Inputs
X Decoder
DS800032-1
© 2000 Fairchild Semiconductor Corporation
FM27C010
1
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FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
January 2000
DIP PIN CONFIGURATIONS
DIP
FM27C010
27C040 27C512 27C256
XX/VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
VPP
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
XX/VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
27C256
27C512
27C040
VCC
VCC
A18
XX/PGM
V
V
A17
XX
CC
CC
A14
A14
A14
A14
A13
A13
A13
A13
A8
A8
A8
A8
A9
A9
A9
A9
A11
A11
A11
A11
OE
OE/VPP
OE
OE
A10
A10
A10
A10
CE/PGM CE/PGM CE/PGM
CE
O7
O7
O7
O7
O6
O6
O6
O6
O5
O5
O5
O5
O4
O4
O4
O4
O
O
O3
O3
3
3
DS800032-10
Note:
Compatible EPROM pin configurations are shown in the blocks adjacent to the FM27C010 pins.
Commercial Temperature Range
Extended Temperature Range
(0°C to +70°C) VCC = 5V ±10%
(-40°C to +85°C) VCC = 5V ±10%
Parameter/Order Number
Access Time (ns)
Parameter/Order Number
Access Time (ns)
FM27C010 Q, V, N 90
90
FM27C010 QE, VE, NE 90
90
FM27C010 Q, V, N 120
120
FM27C010 QE, VE, NE 120
120
FM27C010 Q, V, N 150
150
FM27C010 QE, VE, NE 150
150
Pin Names
Package Types: FM27C010 Q, N, V XXX
Q = Quartz-Windowed Ceramic DIP package
A0–A16
Addresses
V = PLCC package
CE
Chip Enable
N = Plastic DIP package
OE
Output Enable
• All packages conform to JEDEC standard.
• All versions are guaranteed to function at slower speeds.
O0–O7
Outputs
PGM
Program
XX
Don’t Care (During Read)
A12
A15
A16
XX/VPP
VCC
XX/PGM
XX
PLCC Pin Configuration
4
2
1 32 31 30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
Top View
2
FM27C010
A14
A13
A8
A9
A11
OE
A10
CE
O7
14 15 16 17 18 19 20
O1
O2
GND
O3
O4
O5
O6
A7
A6
A5
A4
A3
A2
A1
A0
O0
3
DS800032-3
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FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Connection Diagrams
Storage Temperature
All Output Voltages with
Respect to Ground (Note 10)
-65°C to +150°C
All Input Voltages Except A9 with
Respect to Ground (Note 10)
VPP and A9 with Respect to Ground
VCC Supply Voltage with
Respect to Ground
VCC + 1.0V to GND - 0.6V
Operating Range
-0.6V to +7V
Range
-0.6V to +14V
-0.6V to +7V
ESD Protection
Temperature
VCC
Tolerance
Commercial
0°C to +70°C
+5V
±10%
Extended
-40°C to +85°C
+5V
±10%
>2000V
DC Read Characteristics Over Operating Range with VPP = VCC
Symbol
Min
Max
Units
VIL
Input Low Level
Parameter
Test Conditions
-0.5
0.8
V
VIH
Input High Level
2.0
VCC +1
V
VOL
Output Low Voltage
IOL = 2.1 mA
0.4
V
VOH
Output High Voltage
IOH = -2.5 mA
ISB1
VCC Standby Current
(CMOS)
CE = VCC ± 0.3V
ISB2
VCC Standby Current (TTL)
CE = VIH
ICC
VCC Active Current
CE = OE = VIL
I/O = 0 mA
IPP
VPP Supply Current
VPP = VCC
VPP
VPP Read Voltage
ILI
Input Load Current
ILO
Output Leakage Current
3.5
V
100
µA
1
mA
30
mA
10
µA
VCC - 0.7
VCC
V
VIN = 5.5 or GND
-1
1
µA
VOUT = 5.5V or GND
-10
10
µA
f = 5 MHz
AC Read Characteristics Over Operating Range with VPP = VCC
Symbol
Parameter
70
Min
90
Max
Min
Max
120
Min
Max
Min
150
Max
tACC
Address to Output Delay
70
90
120
150
tCE
CE to Output Delay
70
90
120
150
tOE
OE to Output Delay
35
40
50
50
tDF
(Note 2)
Output Disable to Output
Float
30
35
35
45
tOH
(Note 2)
Output Hold from
Addresses, CE or OE ,
Whichever Occurred First
0
0
0
Units
ns
0
Capacitance TA = +25°C, f = 1 MHz (Note 2)
Symbol
Parameter
Conditions
Typ
Max
Units
CIN
Input Capacitance
VIN = 0V
6
15
pF
COUT
Output Capacitance
VOUT = 0V
10
15
pF
3
FM27C010
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FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Absolute Maximum Ratings (Note 1)
Output Load
1 TTL Gate and CL = 100 pF (Note 8)
≤5 ns
Input Rise and Fall Times
Input Pulse Levels
0.45V to 2.4V
Timing Measurement Reference Level
Inputs
Outputs
0.8V and 2V
0.8V and 2V
AC Waveforms (Note 6), (Note 7), and (Note 9)
ADDRESS
CE
2V
0.8V
Address Valid
2V
0.8V
tCF
(Note 4, 5)
tCE
2V
OE 0.8V
OUTPUT
tOE
tDF
(Note 3)
(Note 4, 5)
Hi-Z
2V
Hi-Z
Valid Output
0.8V
tACC
tOH
(Note 3)
DS800032-4
Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Note 2: This parameter is only sampled and is not 100% tested.
Note 3: OE may be delayed up to tACC - tOE after the falling edge of CE without impacting tACC.
Note 4: The tDF and tCF compare level is determined as follows:
High to TRI-STATE®, the measured VOH1 (DC) - 0.10V;
Low to TRI-STATE, the measured VOL1 (DC) + 0.10V.
Note 5: TRI-STATE may be attained using OE or CE.
Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 µF ceramic capacitor be used on every device
between VCC and GND.
Note 7: The outputs must be restricted to VCC + 1.0V to avoid latch-up and device damage.
Note 8: 1 TTL Gate: IOL = 1.6 mA, IOH = -400 µA.
CL: 100 pF includes fixture capacitance.
Note 9: VPP may be connected to VCC except during programming.
Note 10: Inputs and outputs can undershoot to -2.0V for 20 ns Max.
Programming Characteristics (Note 11), (Note 12), (Note 13), and (Note 14)
Symbol
Parameter
Conditions
Typ
Max
Units
tAS
Address Setup Time
1
µs
tOES
OE Setup Time
1
µs
tCES
CE Setup Time
1
µs
tDS
Data Setup Time
1
µs
tVPS
VPP Setup Time
1
µs
tVCS
VCC Setup Time
1
µs
tAH
Address Hold Time
0
µs
tDH
Data Hold Time
1
µs
tDF
Output Enable to Output Float Delay
tPW
Program Pulse Width
OE = VIH
CE = VIL
0
45
4
FM27C010
Min
50
60
ns
105
µs
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FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
AC Test Conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Units
tOE
Data Valid from OE
CE = VIL
100
ns
IPP
VPP Supply Current during
Programming Pulse
CE = VIL
PGM = VIL
15
mA
ICC
VCC Supply Current
20
mA
TA
Temperature Ambient
20
25
30
°C
VCC
Power Supply Voltage
6.2
6.5
6.75
V
VPP
Programming Supply Voltage
12.5
12.75
13.0
V
tFR
Input Rise, Fall Time
VIL
Input Low Voltage
VIH
Input High Voltage
tIN
Input Timing Reference Voltage
0.8
2.0
V
Output Timing Reference Voltage
0.8
2.0
V
tOUT
5
ns
0.0
2.4
0.45
4.0
V
V
Programming Waveforms (Note 13)
Note 11: Fairchild’s standard product warranty applies only to devices programmed to specifications described herein.
Program
Verify
Program
ADDRESS
2V
0.8V
Address N
t AS
DATA
2V
t AH
Hi-Z
Data In Stable
ADD N
0.8V
t DS
Data Out Valid
ADD N
t DH
t DF
6.25V
t VCS
VCC
12.75V
VPP
CE
t VPS
0.8V
t CES
PGM 2V
0.8V
t OES
t PW
t OE
OE 2V
0.8V
DS800032-5
Note 12: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. The EPROM must not be inserted into or removed from a board with
voltage applied to VPP or VCC.
Note 13: The maximum absolute allowable voltage which may be applied to the VPP pin during programming is 14V. Care must be taken when switching the VPP supply to
prevent any overshoot from exceeding this 14V maximum specification. At least a 0.1 µF capacitor is required across VPP, VCC to GND to suppress spurious voltage transients
which may damage the device.
Note 14: During power up the PGM pin must be brought high (≥VIH) either coincident with or before power is applied to VPP.
5
FM27C010
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FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Programming Characteristics (Note 11), (Note 12), (Note 13), and (Note 14) (Continued)
FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Turbo Programming Algorithm Flow Chart
VCC = 6.5V VPP = 12.75V
n=0
ADDRESS = FIRST LOCATION
PROGRAM ONE 50µs PULSE
INCREMENT n
NO
DEVICE
FAILED
YES
n = 10?
FAIL
VERIFY
BYTE
PASS
LAST
ADDRESS
?
NO
INCREMENT
ADDRESS
n=0
YES
ADDRESS = FIRST LOCATION
VERIFY
BYTE
FAIL
PASS
INCREMENT
ADDRESS
NO
PROGRAM ONE
50 µs
PULSE
LAST
ADDRESS
?
YES
CHECK ALL BYTES
1ST: VCC = VPP = 6.0V
2ND: VCC = VPP = 4.3V
Note:
The standard National Semiconductor Algorithm may also be used but it will have longer programming time.
DS800032-6
FIGURE 1.
6
FM27C010
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The EPROM is in the programming mode when the VPP power
supply is at 12.75V and OE is at VIH. It is required that at least a
0.1 µF capacitor be placed across VPP, VCC to ground to suppress
spurious voltage transients which may damage the device. The
data to be programmed is applied 8 bits in parallel to the data
output pins. The levels required for the address and data inputs
are TTL.
DEVICE OPERATION
The six modes of operation of the EPROM are listed in Table 1. It
should be noted that all inputs for the six modes are at TTL levels.
The power supplies required are VCC and VPP. The VPP power
supply must be at 12.75V during the three programming modes,
and must be at 5V in the other three modes. The VCC power supply
must be at 6.5V during the three programming modes, and at 5V
in the other three modes.
When the address and data are stable, an active low, TTL program
pulse is applied to the PGM input. A program pulse must be
applied at each address location to be programmed. The EPROM
is programmed with the Turbo Programming Algorithm shown in
Figure 1. Each Address is programmed with a series of 50 µs
pulses until it verifies good, up to a maximum of 10 pulses. Most
memory cells will program with a single 50 µs pulse.
Read Mode
The EPROM has two control functions, both of which must be
logically active in order to obtain data at the outputs. Chip Enable
(CE) is the power control and should be used for device selection.
Output Enable (OE) is the output control and should be used to
gate data to the output pins, independent of device selection.
Assuming that the addresses are stable, address access time
(tACC) is equal to the delay from CE to output (tCE). Data is available
at the outputs tOE after the falling edge of OE , assuming that CE
has been low and addresses have been stable for at least tACC –
tOE.
The EPROM must not be programmed with a DC signal applied to
the PGM input.
Programming multiple EPROM in parallel with the same data can
be easily accomplished due to the simplicity of the programming
requirements. Like inputs of the parallel EPROM may be connected together when they are programmed with the same data.
A low level TTL pulse applied to the PGM input programs the
paralleled EPROM.
Standby Mode
Program Inhibit
The EPROM has a standby mode which reduces the active power
dissipation by over 99%, from 165 mW to 0.55 mW. The EPROM
is placed in the standby mode by applying a CMOS high signal to
the CE input. When in standby mode, the outputs are in a high
impedance state, independent of the OE input.
Programming multiple EPROM’s in parallel with different data is
also easily accomplished. Except for CE all like inputs (including
OE and PGM) of the parallel EPROM may be common. A TTL low
level program pulse applied to an EPROM’s PGM input with CE at
VIL and VPP at 12.75V will program that EPROM. A TTL high level
CE input inhibits the other EPROM’s from being programmed.
Output Disable
The EPROM is placed in output disable by applying a TTL high
signal to the OE input. When in output disable all circuitry is
enabled, except the outputs are in a high impedance state (TRISTATE).
Program Verify
A verify should be performed on the programmed bits to determine
whether they were correctly programmed. The verify may be
performed with VPP at 12.75V. VPP must be at VCC, except during
programming and program verify.
Output OR-Tying
Because the EPROM is usually used in larger memory arrays,
Fairchild has provided a 2-line control function that accommodates this use of multiple memory connections. The 2-line control
function allows for:
AFTER PROGRAMMING
Opaque labels should be placed over the EPROM window to
prevent unintentional erasure. Covering the window will also
prevent temporary functional failure due to the generation of photo
currents.
1. the lowest possible memory power dissipation, and
2. complete assurance that output bus contention will not
occur.
MANUFACTURER’S IDENTIFICATION CODE
To most efficiently use these two control lines, it is recommended
that CE be decoded and used as the primary device selecting
function, while OE be made a common connection to all devices
in the array and connected to the READ line from the system
control bus. This assures that all deselected memory devices are
in their low power standby modes and that the output pins are
active only when data is desired from a particular memory device.
The EPROM has a manufacturer’s indentification code to aid in
programming. When the device is inserted in an EPROM programmer socket, the programmer reads the code and then
automatically calls up the specific programming algorithm for the
part. This automatic programming control is only possible with
programmers which have the capability of reading the code.
The Manufacturer’s Identification code, shown in Table 2, specifically identifies the manufacturer and device type. The code for the
FM27C010 is “8F86”, where “8F” designates that it is made by
Fairchild Semiconductor, and “86” designates a 1 Megabit (128K
x 8) part.
Programming
CAUTION: Exceeding 14V on the VPP or A9 pin will damage the
EPROM.
Initially, and after each erasure, all bits of the EPROM are in the
“1’s” state. Data is introduced by selectively programming “0’s”
into the desired bit locations. Although only “0’s” will be programmed, both “1’s” and “0’s” can be presented in the data word.
The only way to change a “0” to a “1” is by ultraviolet light erasure.
The code is accessed by applying 12V ±0.5V to address pin A9.
Addresses A1–A8, A10–A16, and all control pins are held at VIL.
Address pin A0 is held at VIL for the manufacturer’s code, and held
at VIH for the device code. The code is read on the eight data pins,
O0–07. Proper code access is only guaranteed at 25°C ± 5°C.
7
FM27C010
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FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Functional Description
be checked to make certain full erasure is occurring. Incomplete
erasure will cause symptoms that can be misleading. Programmers, components and even system designs have been erroneously suspected when incomplete erasure was the problem.
ERASURE CHARACTERISTICS
The erasure characteristics of the device are such that erasure
begins to occur when exposed to light with wavelengths shorter
than approximately 4000 Angstroms (Å). It should be noted that
sunlight and certain types of fluorescent lamps have wavelengths
in the 3000Å – 4000Å range.
SYSTEM CONSIDERATION
The power switching characteristics of EPROMs require careful
decoupling of the devices. The supply current, ICC, has three
segments that are of interest to the system designer: the standby
current level, the active current level, and the transient current
peaks that are produced by voltage transitions on input pins. The
magnitude of these transient current peaks is dependent on the
output capacitance loading of the device. The associated VCC
transient voltage peaks can be suppressed by properly selected
decoupling capacitors. It is recommended that at least a 0.1 µF
ceramic capacitor be used on every device between VCC and
GND. This should be a high frequency capacitor of low inherent
inductance. In addition, at least a 4.7 µF bulk electrolytic capacitor
should be used between VCC and GND for each eight devices. The
bulk capacitor should be located near where the power supply is
connected to the array. The purpose of the bulk capacitor is to
overcome the voltage drop caused by the inductive effects of the
PC board traces.
The recommended erasure procedure for the EPROM is exposure to short wave ultraviolet light which has a wavelength of
2537Å. The integrated dose (i.e., UV intensity x exposure time) for
erasure should be a minimum of 15W-sec/cm2.
The EPROM should be placed within 1 inch of the lamp tubes
during erasure. Some lamps have a filter on their tubes which
should be removed before erasure.
An erasure system should be calibrated periodically. The distance
from lamp to device should be maintained at one inch. The erasure
time increases as the square of the distance from the lamp. (if
distance is doubled the erasure time increases by factor of 4).
Lamps lose intensity as they age. When a lamp is changed, the
distance has changed, or the lamp has aged, the system should
MODE SELECTION
The modes of operation of the FM27C010 are listed in Table 1. A single 5V power supply is required in the read mode. All inputs are TTL
levels except for VPP and A9 for device signature.
TABLE 1. Modes Selection
Pins
CE
OE
PGM
VPP
VCC
Outputs
Read
VIL
VIL
X
(Note 15)
X
5.0V
DOUT
Output Disable
X
VIH
X
X
5.0V
High Z
Mode
Standby
VIH
X
X
X
5.0V
High Z
Programming
VIL
VIH
VIL
12.75V
6.25V
DIN
Program Verify
VIL
VIL
VIH
12.75V
6.25V
DOUT
Program Inhibit
VIH
X
X
12.75V
6.25V
High Z
Note 15: X can be VIL or VIH.
TABLE 2. Manufacturer’s Identification Code
Pins
A0
(12)
A9
(26)
O7
(21)
O6
(20)
O5
(19)
O4
(18)
O3
(17)
O2
(15)
O1
(14)
O0
(13)
Hex
Data
Manufacturer Code
VIL
12V
1
0
0
0
1
1
1
1
8F
Device Code
VIH
12V
1
0
0
0
0
1
1
0
86
8
FM27C010
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FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Functional Description (Continued)
1.660
MAX
(42.16)
32
17
R 0.025
(0.64)
0.585
(14.86)
MAX
1
16
UV WINDOW SIZE AND
CONFIGURATION DETERMINED
BY DEVICE SIZE
R 0.030-0.055
(0.76 - 1.40)
TYP
0.050-0.060
(1.27 - 1.52)
TYP
0.005 MIN
(0.127) TYP
0.175
(4.45)
MAX
0.225 MAX TYP
(5.72)
0.015 -0.060
(0.25 - 1.52)
TYP
0.125 MIN
(3.18) TYP
86°-94°
TYP
0.060-0.100
(1.52 - 2.54)
TYP
0.590-0.620
(15.03 - 15.79)
0.10
(2.54)
MAX
Glass Sealant
0.090-0.110
(2.29 - 2.79)
TYP
90° - 100°
TYP
0.150 MIN
(3.81) TYP
0.015-0.021
(0.38 - 0.53)
TYP
0.685
(17.40)
0.008-0.012
(0.20 - 0.30)
TYP
+0.025
(0.64)
-0.060
(-1.523)
32-Lead EPROM Ceramic Dual-In-Line Package (Q)
Order Number FM27C010QXXX
Package Number J32AQ
1.64 – 1.66
(41.66 – 42.164)
32
17
0.062 TYP
(1.575)
RAD
0.490 – 0.550
(12.446 – 13.97)
1
Pin No. 1 IDENT
16
0.580
(14.73)
MIN
0.050
(1.270)
TYP
0.600 – 0.620
(15.240 – 15.748)
0.125 – 0.165
(3.175 – 4.191)
0.145 – 0.210
(3.683 – 5.334)
86°- 94°
TYP
90°–105°
0.008 - 0.015
(0.203 – 0.381)
0.040 - 0.090
(1.016 – 2.286)
0.100 ±0.010
(2.540 ±0.254)
0.018 ±0.003
(0.457 ±0.078)
0.015
(0.381)
0.120 – 0.150
(3.048 – 3.81)
0.035 – 0.07
(0.889 – 1.778)
32-Lead Molded Dual-In-Line Package (N)
Order Number FM27C010NXXX
Package Number
9
FM27C010
www.fairchildsemi.com
FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Physical Dimensions inches (millimeters) unless otherwise noted
FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
Physical Dimensions inches (millimeters) unless otherwise noted
0.485-0.495
[12.32-12.57]
0.106-0.112
[2.69-2.84]
0.007[0.18] S B D-E S
0.449-0.453
[11.40-11.51]
-H-
Base
Plane
0.023-0.029
[0.58-0.74]
0.015
[0.38] Min Typ
-A0.045
[1.143]
60
°
0.007[0.18] S B D-E S
0.002[0.05] S B
0.000-0.010
[0.00-0.25]
Polished Optional
1
0.490-0530
[12.45-13.46]
0.400
-D4
( [10.16] )
30
0.541-0.545
[13.74-13-84]
29
5
0.549-0.553
[13.94-14.05]
0.015[0.38] S
C
D-E, F-G S
-G-
-B0.585-0.595
[14.86-15.11]
0.013-0.021
TYP
[0.33-0.53]
-FSee detail A
-J13
14
20
-E-
0.002[0.05] S A
0.007[0.18] S
0.007[0.18] S
A F-G S
A F-G S
0.118-0.129
[3.00-3.28]
0.010[0.25] L
0.007[0.18] M
21
B A D-E, F-G S
B
0.042-0.048
45°X [1.07-1.22]
0.123-0.140
[3.12-3.56]
0.050
;;
0.025
[0.64]
Min
B
0.007[0.18] S
0.019-0.025
[0.48-0.64]
H D-E, F-G S
D-E, F-G S
-C0.004[0.10]
0.020
[0.51]
0.005 Max
[0.13]
0.0100
[0.254]
0.045
[1.14]
0.025
[0.64] Min
Detail A
Typical
Rotated 90°
0.021-0.027
[0.53-0.69]
R
0.030-0.040
[0.76-1.02]
0.065-0.071
[1.65-1.80]
0.053-0.059
[1.65-1.80]
0.031-0.037
[0.79-0.94]
0.006-0.012
[0.15-0.30]
0.026-0.032
Typ
[0.66-0.81]
C
0.078-0.095
[1.98-2.41]
0.027-0.033
[0.69-0.84]
Section B-B
Typical
32-Lead PLCC Package
Order Number FM27C010VXXX
Package Number VA32A
Life Support Policy
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(a) are intended for surgical implant into the body, or (b) support
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2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,
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10
FM27C010
www.fairchildsemi.com