CYSTEKEC MTE011N10RQ8-0-T3-G N-channel enhancement mode power mosfet Datasheet

Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE011N10RQ8
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4A
Features
100V
10.6A
10.8 mΩ(typ)
 Single Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Repetitive Avalanche Rated
 Pb-free & Halogen-free package
Symbol
Outline
MTE011N10RQ8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
Ordering Information
Device
MTE011N10RQ8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE011N10RQ8
CYStek Product Specification
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=5mH, ID=10.6A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
TA=25 C
Total Power Dissipation
TA=70 C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
VDS
VGS
Tj, Tstg
100
±30
10.6
8.5
42 *1
10.6
281
1.6 *2
3.1
2
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
20
40
ID
IDM
IAS
EAS
EAR
PD
Unit
V
A
mJ
W
C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Unit
C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
100
2
-
11
10.8
4
±100
1
25
13.8
-
42
13
12
2445
325
35
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
MTE011N10RQ8
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=5A
VGS=±30V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125C
VGS =10V, ID=4A
nC
VDS=50V, VGS=10V, ID=4A
pF
VDS=25V, VGS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 3/9
Characteristics (Cont. TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
td(ON) *1, 2
21
tr
18.6
*1, 2
ns
td(OFF) *1, 2
56
tf *1, 2
7
Source-Drain Diode Ratings and Characteristics
IS *1
4
A
ISM *3
16
VSD *1
0.76
1.2
V
trr
39
ns
Qrr
69
nC
Test Conditions
VDS=50V, ID=4A, VGS=10V, RGS=3Ω
IS=4A, VGS=0V
IF=4A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTE011N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
45
35
7V
30
10V,9V,8V
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current (A)
40
25
6V
20
15
5.5V
10
5
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=5V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=6V
10
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
2.8
ID=4A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
80
60
40
20
2.4
VGS=10V, ID=4A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 10.8mΩ typ.
0.4
0
0
0
MTE011N10RQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
Coss
100
Crss
1.2
0.8
0.6
0.4
5
10
15
20
VDS, Drain-Source Voltage(V)
ID=250μA
0.2
0
10
0
ID=1mA
1
25
-75 -50 -25
30
50
75 100 125 150 175
Gate Charge Characteristics
10
100
VDS=10V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=15V
1
0.1
Ta=25°C
Pulsed
0.01
0.001
8
6
4
2
VDS=50V
ID=4A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
100
20
30
40
Qg, Total Gate Charge(nC)
50
10
ID, Maximum Drain Current(A)
12
RDSON
Limited
100μs
1ms
1
10ms
100ms
0.1
10
Maximum Drain Current vs JunctionTemperature
Maximum Safe Operating Area
ID, Drain Current(A)
0
TA=25°C, Tj=150°C
VGS=10V, RθJA=40°C/W
Single Pulse
1s
DC
0.01
0.01
MTE011N10RQ8
10
8
6
4
TA=25°C, VGS=10V, RθJA=40°C/W,
Single Pulse
2
0
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
Tj, JunctionTemperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
400
45
VDS=10V
TJ(MAX) =150C
TA=25°C
RθJA=40°C/W
350
35
300
30
Power (W)
ID, Drain Current(A)
40
25
20
250
200
150
15
100
10
50
5
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.001
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTE011N10RQ8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE011N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE011N10RQ8
CYStek Product Specification
Spec. No. : C169Q8
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
E011
N10R
Date Code
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D
May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
3rd and 4th codes : prodcution serial number, 01~99
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE011N10RQ8
CYStek Product Specification