APTGF90DH60T3G Asymmetrical - Bridge NPT IGBT Power Module 13 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives 14 Q1 CR1 VCES = 600V IC = 90A @ Tc = 80°C CR3 18 22 7 23 8 19 Q4 CR2 CR4 4 3 30 29 32 31 15 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Reverse Bias Safe Operating Area Tj = 150°C 200A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Unit V April, 2009 IC Max ratings 600 110 90 200 ±20 416 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF90DH60T3G – Rev 0 Symbol VCES APTGF90DH60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Typ 4.5 2 2.2 5.5 Min Typ Max Unit 250 2.5 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Cres Input Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 100A Tj = 125°C RG = 2.2Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 4.3 0.4 nF 240 nC 25 10 130 20 ns 25 11 150 ns 30 1 mJ 3 450 A Diode ratings and characteristics (CR2 & CR3) IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=600V IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/µs V Tj = 25°C Tj = 125°C Tc = 80°C Unit 100 500 Tj = 125°C 100 1.6 2 1.3 Tj = 25°C 160 Tj = 125°C Tj = 25°C 220 290 Tj = 125°C 1530 µA A 2 V April, 2009 VRRM Test Conditions ns nC CR1 & CR4 are IGBT protection diodes only www.microsemi.com 2-5 APTGF90DH60T3G – Rev 0 Symbol Characteristic APTGF90DH60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.3 0.55 Unit T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF90DH60T3G – Rev 0 28 17 1 April, 2009 SP3 Package outline (dimensions in mm) APTGF90DH60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 200 200 150 TJ=125°C 120 IC (A) IC (A) 160 TJ = 125°C 175 TJ=25°C VGE=15V VGE=20V VGE=12V 125 100 80 75 VGE=9V 50 40 25 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 5 VCE = 300V VGE = 15V RG = 2.2 Ω TJ = 125°C 175 4 150 E (mJ) IC (A) 125 100 75 TJ=125°C 50 3 VCE (V) 4 5 3 Eoff 2 Eon 1 TJ=25°C 25 2 Energy losses vs Collector Current Transfert Characteristics 200 1 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance 3.5 Reverse Safe Operating Area 250 Eoff 3 200 2 IC (A) E (mJ) 2.5 1.5 150 100 1 Eon 0.5 VGE=15V TJ=125°C RG=2.2 Ω 50 VCE = 300V ; VGE =15V IC = 100A ; TJ = 125°C 0 0 0 2 4 6 8 Gate Resistance (ohms) 10 0 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.2 0.15 0.1 0.05 0.9 IGBT 0.7 April, 2009 0.3 0.25 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-5 APTGF90DH60T3G – Rev 0 Thermal Impedance (°C/W) 0.35 APTGF90DH60T3G VCE=300V D=50% RG=2.2Ω TJ=125°C TC=75°C 200 150 150 TJ=125°C ZCS 100 50 50 0 0 25 0.4 50 75 IC (A) 100 125 150 0 0.3 0.6 0.9 1.2 VF (V) 1.5 1.8 2.1 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 0.5 100 TJ=25°C ZVS hard switching 0 Thermal Impedance (°C/W) Forward Characteristic of diode 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 250 Diode 0.9 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF90DH60T3G – Rev 0 April, 2009 0 0.00001 Single Pulse