TECHNICAL DATA IN74HCT02A Quad 2-Input NOR Gate High-Performance Silicon-Gate CMOS The IN74HCT02A is identical in pinout to the LS/ALS02. The IN74HCT02A may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. • TTL/NMOS Compatible Input Levels • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 4.5 to 5.5 V • Low Input Current: 1.0 µA ORDERING INFORMATION IN74HCT02AN Plastic IN74HCT02AD SOIC TA = -55° to 125° C for all packages LOGIC DIAGRAM PIN ASSIGNMENT FUNCTION TABLE Inputs PIN 14 =VCC PIN 7 = GND Output A B Y L L H L H L H L L H H L 15 IN74HCT02A MAXIMUM RATINGS* Symbol Parameter Value Unit -0.5 to +7.0 V VCC DC Supply Voltage (Referenced to GND) VIN DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin ±20 mA IOUT DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ 750 500 mW -65 to +150 °C 260 °C VOUT IIN Tstg TL Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) Min Max Unit 4.5 5.5 V 0 VCC V -55 +125 °C 0 500 ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 16 IN74HCT02A DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND) VCC V 25 °C to -55°C ≤85 °C ≤125 °C Unit VOUT=0.1 V IOUT≤ 20 µA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V Maximum Low Level Input Voltage VOUT=0.1 V or VCC-0.1 V IOUT ≤ 20 µA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V Minimum High-Level Output Voltage VIN= VIL IOUT ≤ 20 µA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V VIN= VIL IOUT ≤ 4.0 mA 4.5 3.98 3.84 3.7 VIN=VIH or VIL IOUT ≤ 20 µA 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 VIN=VIH or VIL IOUT ≤ 4.0 mA 4.5 0.26 0.33 0.4 Symbol Parameter VIH Minimum High-Level Input Voltage VIL VOH VOL Guaranteed Limit Maximum Low-Level Output Voltage Test Conditions V IIN Maximum Input Leakage Current VIN=VCC or GND 5.5 ±0.1 ±1.0 ±1.0 µA ICC Maximum Quiescent Supply Current (per Package) VIN=VCC or GND IOUT=0µA 5.5 1.0 10 40 µA ∆ICC Additional Quiescent Supply Current VIN = 2.4 V, Any One Input VIN=VCC or GND, Other Inputs ≥-55°C 25°C to 125°C mA 2.9 2.4 IOUT=0µA 5.5 17 IN74HCT02A AC ELECTRICAL CHARACTERISTICS(VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns) Guaranteed Limit Symbol Parameter 25 °C to -55°C ≤85°C ≤125°C Unit tPLH, tPHL Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) 16 20 24 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 2) 15 19 22 ns Maximum Input Capacitance 10 10 10 pF CIN Power Dissipation Capacitance (Per Gate) CPD Typical @25°C,VCC=5.0 V Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC Figure 1. Switching Waveforms EXPANDED LOGIC DIAGRAM (1/4 of the Device) 18 25 pF Figure 2. Test Circuit