UTC BC817 Npn general purpose amplifier Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC817
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
„
DESCRIPTION
The UTC BC817 is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2A.
Lead-free:
BC817L
Halogen-free:BC817G
„
ORDERING INFORMATION
Normal
BC817-x-AE3-R
BC817-x-AL3-R
Ordering Number
Lead Free
BC817L-x-AE3-R
BC817L-x-AL3-R
BC817L-x-AE3-R
Halogen Free
BC817G-x-AE3-R
BC817G-x-AL3-R
SOT-23
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
(1) R: Tape Reel
(1)Packing Type
(2) AE3: SOT-23, AL3: SOT-323
(2)Package Type
(3) x: refer to Classification of hFE
(3)Rank
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
(4)Lead Plating
„
Package
MARKING
BC817-16
6A
L: Lead Free
G: Halogen Free
BC817-25
6B
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
L: Lead Free
G: Halogen Free
BC817-40
6C
L: Lead Free
G: Halogen Free
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BC817
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
RATINGS
UNIT
50
V
45
V
5.0
V
1.5
A
SOT-23
310
mW
Collector Dissipation
PC
SOT-323
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
VCES
VCEO
VEBO
IC
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
SYMBOL
BVCEO
BVCES
BVEBO
Collector Cut-OFF Current
ICBO
TEST CONDITIONS
IC=10mA, IB=0
IC=100μA,IE=0
IE=10μA, Ic=0
VCB=20V
VCB=20V,Ta=150°C
MIN TYP MAX UNIT
45
50
5
100
5
V
V
V
nA
μA
ON CHARACTERISTICS
hFE1
hFE2
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
„
VCE(SAT)
VBE(ON)
IC=100mA,VCE=1.0V
IC =500mA, VCE=1.0V
IC =500mA,IB=50mA
IC =500mA, VCE=1.0V
See Classification
40
0.7
1.2
V
V
CLASSIFICATION OF hFE1
RANK
RANGE
16
100-250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
160-400
40
250-600
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NPN SILICON TRANSISTOR
Base-Emitter Voltage, VBE(SAT) (V)
Base-Emitter On Voltage, VBE(ON) (V)
TYPICAL CHARACTERISTICS
„
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BC817
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Power Dissipation, PD(mW)
Gain Bandwidth Pro Duct, hFE(MHz)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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