BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 FEATURES 5 Complimentary Pairs 6 3 Low On-Resistance 2 Low Gate Threshold Voltage 1 Fast Switching Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. . (Halogen Free) 6 APPLICATIONS 5 4 Q1 Switching Power Supplies Q2 Hand-Held Computers, PDAs 1 MARKING CODE: S82 MAXIMUM RATINGS - TOTAL DEVICE 2 3 TJ = 25°C Unless otherwise noted Rating Total Power Dissipation (Note 1) Operating Junction and Storage Temperature Range MAXIMUM RATINGS N - CHANNEL - Q1 , 2N7002 Rating Symbol Value Units PD 200 mW TJ, T stg -55 to +150 °C TJ = 25°C Unless otherwise noted Symbol Value Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS < 1.0Mohm V DGR 60 V Gate-Source Voltage - Continuous VGSS ±20 V Drain Current - Continuous (Note 1) ID 115 mA MAXIMUM RATINGS P - CHANNEL - Q2 , BSS84 Rating Units TJ = 25°C Unless otherwise noted Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS < 20Kohm V DGR -50 V Gate-Source Voltage - Continuous VGSS ±20 V Drain Current - Continuous (Note 1) ID 130 mA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol Value Units R thja 625 °C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 9/15/2005 Page 1 www.panjit.com BSS8402DW Electrical Characteristics - N-CHANNEL - Q1 , 2N7002 TJ = 25°C Unless otherwise noted OFF CHARACTERISTICS (Note 2) Parameter Symbol Min Typ Max Units 60 80 - V TJ=25°C - - 1.0 TJ=125°C - - 500 - - ±10 nA Min Typ Max Units 1.0 1.6 2.5 V VGS= 5V, I D= 0.05A - 1.8 4.5 VGS= 10V, I D= 0.5A - 2.0 7.0 0.5 1.65 - A V DS= 10V, I D = 0.2A 0.08 - - S Conditions Min Typ Max Units Conditions Drain-Source Breakdown Voltage BVDSS I D = 10µA, VGS= 0V Zero Gate Voltage Drain Current I DSS VDS= 60V, V GS= 0 Gate-Body Leakage I GSS VGS= ±20V, V DS= 0V µA ON CHARACTERISTICS (Note 2) Parameter Symbol Conditions V GS(th) VDS= V GS, I D= 250µA Gate Threshold Voltage Static Drain-Source On-ResistanceR DS(ON) I D(ON) VGS= 10V, V DS= 7.5V On-State Drain Current g FS Forward Transconductance Ohms DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance C iss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS= 25V, VGS= 0V, f = 1.0MHz - - 50 pF - - 25 pF - - 5.0 pF Conditions Min Typ Max Units - - 20 ns - - 20 ns SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Turn-Off Delay Time Symbol t D(ON) V =30V, I =0.2A, R =150ohm L DD D RGEN= 25ohm, VGEN = 10V t D(OFF) Note 2. Short duration test pulse used to minimize self-heating 9/15/2005 Page 2 www.panjit.com BSS8402DW Electrical Characteristics - P-CHANNEL - Q2 , BSS84 TJ = 25°C Unless otherwise noted OFF CHARACTERISTICS (Note 3) Parameter Symbol Min Typ Max Units -50 - - V VDS= -50V, VGS= 0V, T J=25°C - - -15 V DS= -50V, VGS= 0V, T J=125°C - - -60 V DS= -25V, V GS= 0V, T J=25°C - - -0.1 V GS= ±20V, V DS= 0V - - ±10 nA Conditions Min Typ Max Units V GS(th) VDS= V GS, I D= -1mA -0.8 1.44 -2.0 V - 3.8 10 Ohms 0.05 - - S Min Typ Max Units Conditions Drain-Source Breakdown Voltage BVDSS I D = -250µA, VGS = 0V I DSS Zero Gate Voltage Drain Current I GSS Gate-Body Leakage µA ON CHARACTERISTICS (Note 3) Parameter Symbol Gate Threshold Voltage Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A g FS V DS= -25V, I D= -0.1A Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance C iss Output Capacitance Coss Reverse Transfer Capacitance Crss Conditions VDS= -25V, VGS= 0V, f = 1.0MHz - - 45 pF - - 25 pF - - 12 pF Symbol Conditions Min Typ Max Units Turn-On Delay Time t D(ON) - 7.5 - ns Turn-Off Delay Time t D(OFF) VDD= -30V, I D = -0.27A, RGEN= 50ohm, VGS= -10V - 25 - ns SWITCHING CHARACTERISTICS Parameter Note 3. Short duration test pulse used to minimize self-heating 9/15/2005 Page 3 www.panjit.com BSS8402DW Typical Characteristics Curves - N-Channel - Q1 , 2N7002 TJ = 25°C Unless otherwise noted 1.2 5.0V ID - Drain Source Current (A ID - Drain-Source Current (A) 1 0.8 4.0V 0.6 VGS= 6V, 7V, 8V, 9V, 10V 0.4 3.0V 0.2 V DS =10V 1 0.8 0.6 0.4 25oC 0.2 0 0 0 1 2 3 4 0 5 1 Fig. 1. Output Characteristics 4 5 6 Fig. 2. Transfer Characteristics 10 10 RDS(ON) - On-Resistance (Ohms) RDS(ON) - On-Resistance (Ohms) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 8 6 4 V GS = 4.5V 2 V GS=10.0V 0 8 6 4 Ids=500mA 2 Ids=50mA 0 0 0.2 0.4 0.6 0.8 1 2 1.2 4 Fig. 3. On-Resistance vs. Drain Current 10 10 1.05 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) IS - Source Current (A ID =250µA VGS = 0V 1 25oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 9/15/2005 8 Fig. 4. On-Resistance vs. G-S Voltage 1.1 0.8 -50 6 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) V GS Threshold Voltage (NORMALIZED 2 Page 4 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS8402DW Electrical Characteristic Curves - P-Channel - Q2 , BSS84 TJ = 25°C Unless otherwise noted 1 V GS= 6V, 7V, 8V, 9V, 10V 0.9 -ID - Drain Source Current (A) -ID - Drain-to-Source Current (A) 1 0.8 0.7 5.0V 0.6 0.5 0.4 4.0V 0.3 0.2 3.0V 0.1 0 V DS =10V 0.8 0.6 0.4 25oC 0.2 0 0 1 2 3 4 5 0 1 Fig. 1. Output Characteristics 4 5 6 7 Fig. 2. Transfer Characteristics 10 RDS(ON) - On-Resistance (Ohms) 10 RDS(ON) - On-Resistance (Ohms) 3 -V GS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) 8 V GS = 4.5V 6 4 V GS =10.0V 2 8 6 Ids=-500mA 4 2 Ids=-50mA 0 0 0 0.2 0.4 0.6 0.8 2 1 4 6 8 10 -V GS - Gate-to-Source Voltage (V) -ID - Drain Curre nt (A) Fig. 3. On-Resistance vs. Drain Current Fig. 4. On-Resistance vs. G-S Voltage 1.2 10 ID =250µA -IS - Source Current (A) V GS Threshold Voltage (NORMALIZED 2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) 1 25oC 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 -VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 9/15/2005 VGS = 0V Page 5 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS8402DW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS SOT-363 Unit：inch(mm) Unit：inch(mm) 0.018 (0.45) 0.010(0.25) 0.020 (0.50) 0.087(2.20) 0.074(1.90) SOT-363 0.030(0.75) 0.021(0.55) 0.056(1.40) 0.075 (1.90) 0.054(1.35) 0.045(1.15) 0.010(0.25) 0.003(0.08) 0.047(1.20) 0.004(0.10) 0.000(0.00) 0.012(0.30) 0.005(0.15) 0.026 (0.65) 0.026 (0.65) ORDERING INFORMATION BSS8402DW T/R7: 7 inch reel, 3K units per reel, Pin 1 towards tape sprocket holes BSS8402DW T/R7-R: 7 inch reel, 3K units per reel, Pin 1 away from tape sprocket holes BSS8402DW T/R13: 13 inch reel, 10K units per reel, Pin 1 towards tape sprocket holes BSS8402DW T/R13-R: 13 inch reel, 10K units per reel, Pin 1 away from tape sprocket holes 9/15/2005 Page 6 www.panjit.com BSS8402DW Part No_packing code_Version BSS8402DW_R1_00001 BSS8402DW_R2_00001 For example : RB500V-40_R2_00001 Serial number Version code means HF Packing size code means 13" Packing type means T/R Part No. Packing Code XX Packing type Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING 9/15/2005 Version Code XXXXX 1st Code Packing size code A N/A 0 HF 0 serial number R 7" 1 RoHS 1 serial number B 13" 2 T 26mm X S 52mm Y L F PANASERT T/B CATHODE UP (PBCU) PANASERT T/B CATHODE DOWN (PBCD) 2nd Code HF or RoHS 1st Code 2nd~5th Code U D PAGE . 7 BSS8402DW Disclaimer z Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. z Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. z Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. z Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. z Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. z The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. 9/15/2005 PAGE . 8