Taychipst BYG20J Fast silicon mesa smd rectifier Datasheet

BYG20D THRU BYG20J
200V-600V
Fast Silicon Mesa SMD Rectifier
1.5A
FEATURES
D
D
D
D
D
D
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
Type
BYG20D
BYG20G
BYG20J
tp=10ms,
half sinewave
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
200
400
600
30
Unit
V
V
V
A
IFAV
Tj=Tstg
1.5
–55...+150
A
°C
ER
20
mJ
I(BR)R=1A, Tj=25°C
Maximum Thermal Resistance
Parameter
Test Conditions
Junction lead
TL=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Symbol
RthJL
RthJA
RthJA
RthJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
E-mail: [email protected]
Test Conditions
IF=1A
IF=1.5A
VR=VRRM
VR=VRRM, Tj=100°C
IF=0.5A, IR=1A, iR=0.25A
1 of 2
Type
Symbol
VF
VF
IR
IR
trr
Min
Typ
Max
1.3
1.4
1
10
75
Unit
V
V
mA
mA
ns
Web Site: www.taychipst.com
BYG20D THRU BYG20J
200V-600V
Fast Silicon Mesa SMD Rectifier
RATINGS AND CHARACTERISTIC CURVES
BYG20D THRU BYG20J
100
IF – Forward Current ( A )
100
I R – Reverse Current ( mA )
1.5A
10
1
0.1
10
Tj = 125°C
1
Tj = 75°C
0.1
VR = VR RM
Tj = 25°C
0.01
0.01
0
40
80
120
160
200
0
Tj – Junction Temperature ( °C )
94 9341
1
4
3
VF – Forward Voltage ( V )
94 9342
Figure 1. Typ. Reverse Current vs. Junction Temperature
2
Figure 3. Max. Forward Current vs. Forward Voltage
I FAV– Average Forward Current ( A )
600
trr – Reverse Recovery Time ( ns )
2.0
1.6
1.2
RthJA=25K/W
100K/W
0.8
125K/W
0.4
400
0
40
80
100°C
75°C
50°C
200
100
25°C
0
120
160
200
0
Tamb – Ambient Temperature ( °C )
94 9340
Tamb= 125°C
300
150K/W
0
94 9343
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Z thp – Thermal Resistance for Pulse Cond. (K/W)
IR=0.5A, iR=0.125A
500
0.2
0.4
0.6
0.8
1.0
IF – Forward Current ( A )
Figure 4. Max. Reverse Recovery Time vs.
Forward Current
1000
125K/W DC
100
tp/T=0.5
tp/T=0.2
10
tp/T=0.1
tp/T=0.05
tp/T=0.02
Single Pulse
tp/T=0.01
1
10–5
94 9339
10–4
10–3
10–2
10–1
100
101
102
tp – Pulse Length ( s )
Figure 5. Thermal Response
E-mail: [email protected]
2 of 2
Web Site: www.taychipst.com
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