NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board • Utilization, Same as SC−70−6 Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 45 mW @ 4.5 V 20 V 4.0 A 55 mW @ 2.5 V 70 mW @ 1.8 V Applications • DC−DC Conversion • Low Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs SC−88 (SOT−363) D 1 6 D D 2 5 D G 3 4 S MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8.0 V ID 3.2 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25 °C TA = 85 °C 2.3 t≤5s TA = 25 °C 4.0 Steady State TA = 25 °C Top View PD 1.0 W IDM 10 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT D 1 SOT−363 CASE 419B STYLE 28 Parameter Symbol Max Unit Junction−to−Ambient – Steady State RqJA 125 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 80 Junction−to−Lead – Steady State RqJL 45 February, 2006 − Rev. 2 T92 M G G 1 D G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2006 T92 M G S 6 D THERMAL RESISTANCE RATINGS (Note 1) D 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTJS3157N/D NTJS3157N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS 12 VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 16 V V mV/°C TJ = 25°C 1.0 TJ = 85°C 5.0 VDS = 0 V, VGS = ±8.0 V ±100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) 0.40 V Negative Threshold Temperature Coefficient VGS(TH)/TJ VGS = VDS, ID = 250 mA −4.0 Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 4.0 A 45 60 Forward Transconductance gFS mV/°C mW VGS = 2.5 V, ID = 3.6 A 55 70 VGS = 1.8 V, ID = 2.0 A 70 85 VGS = 10 V, ID = 3.2 A 9.0 S 500 pF CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge CISS COSS CRSS VGS = 0 V, f = 1.0 MHz, VDS = 10 V QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 75 60 15 nC 6.0 15 ns 12 25 21 45 11 25 0.7 1.0 6.9 VGS = 4.5 V, VDS = 10 V, ID = 3.2 A 1.0 1.8 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 6.0 W tf DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb Reverse Recovery Charge VGS =0 V, IS = 1.6 A TJ = 25°C 15 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.6 A QRR http://onsemi.com 2 ns 12 3.0 5.0 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. V nC NTJS3157N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 12 1.6 V 6 1.4 V 4 2 1.2 V 0.8 V 1V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C ID, DRAIN CURRENT (AMPS) 8 VDS ≥ 10 V VGS = 1.8 V 8V 4V 2V 1 2 3 4 5 6 7 9 8 8 6 4 10 TJ = 125°C 2.5 1.5 0.5 1 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 4 A TJ = 25°C 0.2 0.15 0.1 0.05 0 3 5 7 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0 0.1 TJ = 25°C 0.08 0.07 VGS = 1.8 V 0.06 0.05 VGS = 2.5 V 0.04 VGS = 4.5 V 0.03 1 3 4 6 7 5 ID, DRAIN CURRENT (AMPS) 2 10000 ID = 4.0 A VGS = 4.5 V 9 VGS = 0 V TJ = 150°C 1.4 1.2 1000 1 TJ = 100°C 0.8 0.6 −50 8 Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 3 0.09 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.8 25°C TJ = −55°C 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.25 1 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 10 −25 0 25 50 75 100 125 150 100 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTJS3157N VDS = 0 V C, CAPACITANCE (pF) 1200 VGS = 0 V TJ = 25°C Ciss 1000 800 600 Ciss Crss 400 200 0 8 Coss Crss 4 VGS 0 VDS 4 8 12 16 20 5 4 VDS 6 QGS 2 0 td(on) 1 1 10 2 ID = 3.2 A TJ = 25°C 1 0 6 tf tr 10 4 3 5 2 4 6 Qg, TOTAL GATE CHARGE (nC) 7 8 0 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (AMPS) t, TIME (ns) td(off) QGD 1 Figure 7. Capacitance Variation VDS = 10 V ID = 0.5 A VGS = 4.5 V 8 VGS 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 10 QG(TOT) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1400 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 0 V TJ = 25°C 5 4 3 2 1 0 0.2 100 0.3 RG, GATE RESISTANCE (OHMS) 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJS3157N ORDERING INFORMATION Device NTJS3157NT1 NTJS3157NT1G NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G Package Shipping† SC−88 3000 Tape & Reel SC−88 (Pb−Free) 3000 Tape & Reel SC−88 3000 Tape & Reel SC−88 (Pb−Free) 3000 Tape & Reel SC−88 10,000 Tape & Reel SC−88 (Pb−Free) 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTJS3157N PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN A3 6 5 4 HE C −E− 1 2 3 L b 6 PL 0.2 (0.008) M E M A INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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