INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.385Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 9.0 A IDM Drain Current-Single Pulsed 27 A PD Total Dissipation @TC=25℃ 83 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.5 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.34mA 2.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 3.5 V VGS=10V; ID=5.2A 0.385 Ω Gate-Source Leakage Current VGS=20V; VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 1 μA VSD Diode forward voltage IF=5.2A, VGS = 0V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark