FDMC8676 tm ® N-Channel PowerTrench MOSFET 30V, 18A, 5.9mΩ Features General Description Max rDS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device. Max rDS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A Low Profile - 1mm max in Power 33 RoHS Compliant Applications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of load Top Bottom Pin 1 S S D D D S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C Units V ±20 V 18 66 (Note 1a) -Pulsed PD Ratings 30 16 A 60 Power Dissipation TC = 25°C Power Dissipation TA = 25°C EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range 41 (Note 1a) (Note 3) 2.3 W 216 mJ -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8676 Device FDMC8676 ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C Package Power 33 1 Reel Size 13’’ Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET December 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 32 VDS = 24V, VGS = 0V mV/°C 1 TJ = 125°C 100 VGS = ±20V, VDS = 0V µA ±100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5 VGS = 10V, ID = 14.7A 4.7 5.9 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 11.5A 7.1 9.3 VGS =10V, ID = 14.7A, TJ = 125°C 6.8 9.1 VDD = 5V, ID = 14.7A 56 gFS Forward Transconductance 1.0 1.8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1455 1935 pF 760 1010 pF 105 155 pF Ω 0.8 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge 9 19 ns 3 10 ns 22 36 ns 2 10 ns VGS = 0V to 10V 21 30 nC VGS = 0V to 4.5V VDD = 15V, ID = 14.7A 10 14 nC VDD = 15V, ID = 14.7A, VGS = 10V, RGEN = 6Ω 4 nC 3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 14.7A (Note 2) 0.8 1.3 VGS = 0V, IS = 1.7A (Note 2) 0.7 1.2 33 53 ns 17 31 nC IF = 14.7A, di/dt = 100A/µs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25oC; N-ch: L =3mH, IAS = 12A, VDD = 30V, VGS = 10V ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 2 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 50 ID, DRAIN CURRENT (A) 2.8 VGS = 10V VGS = 6V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 3.5V 40 VGS = 4.5V 30 VGS = 3V 20 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 10 0 0.0 0.5 1.0 2.6 VGS = 3.5V 2.4 2.2 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 2.0 1.8 VGS = 4.5V 1.6 1.4 VGS = 6V 1.2 VGS = 10V 1.0 0.8 1.5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 40 50 60 25 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) ID = 14.7A VGS = 10V rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 ID = 14.7A PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 20 15 TJ = 125oC 10 5 TJ = 25oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 60 80 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 50 ID, DRAIN CURRENT (A) 20 ID, DRAIN CURRENT(A) VDS = 5V 40 TJ = 150oC 30 TJ = 25oC 20 TJ = -55oC 10 0 1.0 1.5 2.0 2.5 3.0 3.5 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C VGS = 0V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 60000 ID = 14.7A VDD = 10V Ciss CAPACITANCE (pF) 8 VDD = 15V 6 VDD = 20V 4 1000 Coss 100 Crss 2 f = 1MHz VGS = 0V 10 0.1 0 0 5 10 15 20 25 Figure 7. Gate Charge Characteristics 30 10 Figure 8. Capacitance vs Drain to Source Voltage 100 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 10 1ms 10ms 1 THIS AREA IS LIMITED BY rDS(on) 100ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10s o RθJA = 125 C/W DC TA = 25oC 1 0.01 0.1 1 10 100 0.01 0.01 400 tAV, TIME IN AVALANCHE(ms) 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 2000 1000 VGS = 10V SINGLE PULSE 100 o RθJA = 125 C/W o TA = 25 C 10 1 0.5 -4 10 -3 -2 10 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 4 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 5 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8676 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 6 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 7 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET TRADEMARKS