MUR1220FCT thru MUR1260FCT Pb MUR1220FCT/MUR1240FCT/MUR1260FCT Pb Free Plating Product 12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers ITO-220AB(TO-220F-3L) Unit:inch(mm) .189(4.8) .165(4.2) .272(6.9) .248(6.3) .406(10.3) .381(9.7) .134(3.4) .118(3.0) .130(3.3) .114(2.9) Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply,Motor Control,UPS and SMPS etc. .161(4.1)MAX .071(1.8) .055(1.4) .055(1.4) .039(1.0) .035(0.9) .011(0.3) Mechanical Data ※ Case: Full Plastic Isolated Package ITO-220AB ※ Epoxy: UL 94V-0 rate flame retardant ※ Terminals: Solderable per MIL-STD-202 method 208 ※ Polarity: As marked on diode body ※ Mounting position: Any ※ Weight: 2.0 gram approximately .1 .1 (2.55) (2.55) Case Positive Common Cathode Suffix "CT" .543(13.8) .512(13.0) .606(15.4) .583(14.8) .112(2.85) .100(2.55) Features ※ Fast switching for high efficiency ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability .032(.8) MAX Case Case Negative Common Anode Suffix "CTR" .114(2.9) .098(2.5) Doubler Tandem Polarity Suffix "CTD" Case Series Tandem Polarity Suffix "CTS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. PARAMETER SYMBOL MUR1220FCT MUR1220FCTR MUR1220FCTD MUR1220FCTS MUR1240FCT MUR1240FCTR MUR1240FCTD MUR1240FCTS MUR1260FCT MUR1260FCTR MUR1260FCTD MUR1260FCTS UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM VRMS VDC 200 140 200 400 280 400 600 420 600 V V V Maximum Average Forward Rectified Current Tc=100°C (Total Device 2x6.0A=12.0A) IF(AV) 12.0 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 100 A Maximum Instantaneous Forward Voltage @6.0A (Per Diode/Per Leg) VF Maximum DC Reverse Current @TJ=25°C At Rated DC Blocking Voltage @TJ=125°C IR 5.0 100 μA μA Maximum Reverse Recovery Time (Note1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Trr CJ RθJC 35 65 3.0 nS pF °C/W Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 °C 0.98 1.3 1.7 V Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ MUR1220FCT thru MUR1260FCT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 12 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 100 60 Hz Resistive or Inductive load Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 80 60 40 20 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 60 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o MUR1220FCT MUR1240FCT 6 MUR1260FCT 1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com.tw/