Jinan Jingheng LLDB3 Silicon bidirectional diac Datasheet

R
LLDB3/LLDC34/LLDB4/LLDB6
SILICON BIDIRECTIONAL DIAC
S E M I C O N D U C T O R
FEATURES
The three-layer, two-terminal, axial-lead, hermetically sealed diacs are
MiniMELF
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current. The breakover
symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are
intended for use in thyrisitors phase control , circuits for lamp dimming, universal
0.063(1.6)
0.055(1.4)
JF
motor speed control and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate
in conjunction with Triacs and SCR's
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: MiniMELF glass case(SOD-80)
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Parameters
Symbols
Units
LLDB3
PC
Power Dissipation on Printed
Circuit(L=10mm)
TA=50 C
ITRM
Repetitive Peak on-state
Current
tp=10ms
f=100Hz
TSTG/TJ
LLDB4
LLDC34
LLDB6
mW
150
2.0
Storage and Operating Junction Temperature
2.0
2.0
A
1.6
C
-40 to+125/-40 to +110
ELECTRICAL CHARACTERISTICS
Value
Symbols
Parameters
Units
Test Condition
LLDB3
VBO
│+VBO││-VBO│
│+
V│
Breakover Voltage (Note 2 )
C=22nF(Note 2)
See diagram 1
Min
Typ
Max
Breakover Voltage Symmetry
C=22nF(Note 2)
See diagram 1
Max
I=(IBO to IF=10mA)
See Diagram 1
Min
Dynamic Breakover Voltage (Note1)
28
32
36
LLDC34
LLDB4
35
40
45
LLDB6
56
60
70
V
+3
+4
V
5
10
V
30
34
38
VO
Output Voltage (Note 1 )
See Diagram 2
Min
5
V
IBO
Breakover Current (Note1)
C=22nF(Note 2)
Max
100
mA
See Diagram 3
Typ
1.5
ms
VB=0.5 VBO max
see diagram 1
Max
10
mA
tr
IB
Rise Time (Note1)
Leakage Current (Note1)
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
JINAN JINGHENG CO., LTD.
3-4
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096
WWW.JIFUSEMICON.COM
RATINGS AND CHARACTERISTIC CURVES
DIAGRAM 1: Current-voltage characteristics
LLDB3/LLDC34/LLDB4/LLDB6
DIAGRAM 2: Test circuit for output voltage
+IF
10KW
220V
50Hz
10mA
500KW
D.U.T
VO
R=20W
0.1mF
DIAGRAM 3: Test circuit see diagram2 adjust R for
IP=0.5A
IBO
IB
0.5 VBO
-V
+V
IP
90%
V
VBO
10%
-IF
tr
FIG.2-Relative variation of VBO versus junction
temperature(typical values)
FIG.1-Power dissipation versus ambient
temperature (maximum values)
P (mW)
VBO(TJ)
VBO(TJ=25 C)
160
1.08
140
120
100
1.06
80
60
1.04
40
Tamb( C)
20
1.02
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
TJ125
( C)
1.00
25
FIG.3-Peak pulse current versus pulse duration
(maximum values)
50
75
100
125
ITRM(A)
2
f=100Hz
TJ initial=25 C
1
0.1
tp(ms)
0.01
10
100
1000
10000
3-5
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096
WWW.JIFUSEMICON.COM
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