ECH8320 Ordering number : ENA1429A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8320 General-Purpose Switching Device Applications Features • • • • Low ON-resistance 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V ±10 V Allowable Power Dissipation ID IDP PD 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL 2.9 0.25 A ECH8320-TL-H Top View Marking 0.15 8 YA 5 0 t o 0.02 Lot No. 2.3 TL 4 1 0.9 0.65 Electrical Connection 0.3 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 A --40 When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions 0.25 --9.5 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 52312 TKIM/52009PE MSIM TC-00001972 No. A1429-1/7 ECH8320 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Conditions Ratings min ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V --20 VDS=--10V, ID=--1mA VDS=--10V, ID=--5A --0.4 typ Unit max V --1 μA ±10 μA --1.3 16 ID=--5A, VGS=--4.5V ID=--3A, VGS=--2.5V ID=--1A, VGS=--1.8V 11 14.5 mΩ 16 23 mΩ 25 39 mΩ 2300 pF 440 pF 340 pF td(on) VDS=--10V, f=1MHz See specified Test Circuit. 24 ns Rise Time tr See specified Test Circuit. 100 ns Turn-OFF Delay Time td(off) tf See specified Test Circuit. 230 ns See specified Test Circuit. 163 ns 25 nC 3.6 nC Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=--10V, f=1MHz VDS=--10V, f=1MHz V S Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4.5V, ID=--9.5A VDS=--10V, VGS=--4.5V, ID=--9.5A VDS=--10V, VGS=--4.5V, ID=--9.5A Diode Forward Voltage VSD IS=--9.5A, VGS=0V 7.6 --0.79 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --5A RL=2Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8320 P.G 50Ω S Ordering Information Device ECH8320-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1429-2/7 ECH8320 ID -- VDS V --3 --3 --2 --1 VGS= --1.2V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 40 --0.9 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --1A 30 --5A 25 20 15 10 5 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V | yfs | -- ID = Ta 3 5°C --2 2 °C 25 1.0 7 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A SW Time -- ID 3 5 7 --10 2 15 10 --40 --20 0 20 100 7 5 tr 3 td(on) 3 5 7 --0.1 2 3 5 7 --1.0 40 60 80 100 120 140 160 IT14461 VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Ciss, Coss, Crss -- VDS --1.2 IT14463 f=1MHz Ciss 2 1000 7 Coss Crss 5 3 2 2 2 A Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF tf --2.0 IT14459 5 td(off) --1.8 IS -- VSD 3 2 --1.6 5 7 7 5 3 --1.4 A = --3 .5V, I D 2 -= VGS A I = --5 --4.5V, D V GS= 20 IT14462 1000 10 --0.01 25 --0.01 7 5 3 2 --0.001 VDD= --10V VGS= --4.5V 2 Switching Time, SW Time -- ns 3 --1.2 --1 I = .8V, D 1 = VGS 30 3 2 C 75° --1.0 Ambient Temperature, Ta -- °C 2 10 7 5 --0.8 35 IT14460 VDS= --10V 3 --0.6 RDS(on) -- Ta 0 --60 --8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 --7 --0.4 40 --3A 0 --0.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 35 0 IT14458 5°C 25°C --25°C 0 Ta= 7 0 --6 --25° C --1.5V --4 25° C --5 --9 5°C --6 Ta= 7 Drain Current, ID -- A --3.5V --7 ID -- VGS VDS= --10V --12 --8.0V --8 --15 --1. 8 --4.5V --9 Drain Current, ID -- A --2.5V --10 2 3 Drain Current, ID -- A 5 7 --10 2 3 IT14464 100 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14465 No. A1429-3/7 ECH8320 VGS -- Qg --100 7 5 3 2 VDS= --10V ID= --9.5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 12 14 16 18 20 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 22 24 26 IT14466 --10 7 5 3 2 ASO IDP= --40A ID= --9.5A DC 10 0m op s era tio n( Ta = --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 10 0 1m μs 10 s ms 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14467 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14468 No. A1429-4/7 ECH8320 Embossed Taping Specification ECH8320-TL-H No. A1429-5/7 ECH8320 Outline Drawing ECH8320-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1429-6/7 ECH8320 Note on usage : Since the ECH8320 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. A1429-7/7