HiPerFAST TM IGBT with Diode IXGR 50N60C2 IXGR 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC110 TC = 110°C 36 A ICM TC = 25°C, 1 ms 300 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 200 W VISOL 50/60 Hz RMS, t = 1m 2500 V -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 5 g 300 °C TJ Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 40 A, VGE = 15 V Note 1 © 2004 IXYS All rights reserved (ISOLATED TAB) G = Gate E = Emitter C = Collector Features • Very high frequency IGBT and anti-parallel FRED in one package • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250 µA, VCE = VGE VGE(th) ISOPLUS247 (IXGR) 3.0 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 5.0 V 650 5 µA mA ±100 nA 2.7 1.8 Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw V V DS99163(04/04) IXGR 50N60C2 IXGR 50N60C2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 51 S 3700 290 pF pF Cres 50 pF Qg Qge 138 25 nC nC 40 nC 18 ns 25 ns gfs Cies Coes IC = 40 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 40 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = 40 A, VGE = 15 V 115 150 VCE = 480 V, RG = Roff = 2.0 Ω ns 48 ns Eoff 0.38 0.7 mJ td(on) tri Eon td(off) tfi Eoff 18 25 1.4 170 60 0.74 ns ns mJ ns ns mJ 0.15 0.62 K/W K/W tfi Inductive load, TJ = 125°°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2.0 Ω RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM t rr ISOPLUS 247 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 RthJC 2.1 1.4 V 8.3 A ns 0.85 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 50N60C2 IXGR 50N60C2D1 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 80 320 VGE = 15V 13V 11V 70 9V 60 50 40 6V 30 20 200 9V 160 120 7V 80 10 40 5V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 9 10 V C E - Volts V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C Fig. 4. De pende nce of V CE(sat) on Tem perature 80 1.2 VGE = 15V 13V 11V 9V V GE = 15V 1.1 7V VC E ( s a t )- Normalized 70 60 I C - Amperes 11V 240 7V I C - Amperes I C - Amperes VGE = 15V 13V 280 50 40 6V 30 20 1.0 I C = 80A 0.9 I C = 40A 0.8 0.7 0.6 10 I C = 20A 5V 0 0.5 0.5 1 1.5 2 2.5 3 3.5 4 25 50 V CE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 200 4.8 TJ = 25ºC 4.5 180 160 I C - Amperes VC E - Volts 4.2 I C = 80A 40A 20A 3.9 3.6 3.3 140 120 100 80 60 3 TJ = 125ºC 25ºC 40 2.7 20 0 2.4 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 4 4.5 5 5.5 6 6.5 7 V G E - Volts 7.5 8 8.5 9 IXGR 50N60C2 IXGR 50N60C2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 70 3 TJ = 125ºC VGE = 15V VCE = 480V 2.7 TJ = 25ºC 125ºC 2.4 50 E o f f - milliJoules g f s - Siemens 60 40 30 20 I C = 80A 2.1 1.8 1.5 1.2 I C = 40A 0.9 0.6 10 0.3 0 I C = 20A 0 0 20 40 60 80 100 120 140 160 180 200 2 4 6 8 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic 12 14 16 18 Fig. 10. Dependence of Turn-Off Energy on Tem perature 2.2 2.4 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 1.8 1.6 1.8 1.4 1.2 TJ = 125ºC 1 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 2.1 E o f f - milliJoules 2 E o f f - MilliJoules 10 R G - Ohms 0.8 0.6 TJ = 25ºC I C = 80A 1.5 1.2 0.9 I C = 40A 0.6 0.4 0.3 0.2 I C = 20A 0 0 20 30 40 50 60 70 25 80 35 45 I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 65 75 85 95 105 115 125 Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 200 450 td(off) tfi - - - - - - 400 Switching Time - nanoseconds Switching Time - nanoseconds 55 TJ - Degrees Centigrade TJ = 125ºC VGE = 15V VCE = 480V 350 300 250 200 I C = 20A I C = 40A 150 I C = 80A 100 50 td(off) tfi - - - - - - 180 R G = 2Ω VGE = 15V VCE = 480V 160 140 TJ = 125ºC 120 100 TJ = 25ºC 80 60 40 2 4 6 8 10 12 14 16 18 20 30 R G - Ohms 40 50 60 70 80 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 50N60C2 IXGR 50N60C2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Reverse-Bias Safe Operating Area 90 200 td(off) tfi - - - - - - 80 I C = 20A R G = 2Ω VGE = 15V VCE = 480V 160 140 70 60 120 I C - Amperes Switching Time - nanoseconds 180 I C = 80A 100 80 I C = 40A 60 40 50 40 30 TJ = 125º C 20 R G = 10Ω dV/dT < 10V/ns 10 I C = 20A 20 0 25 35 45 55 65 75 85 95 105 115 125 100 200 300 TJ - Degrees Centigrade V 500 600 - Volts Fig. 16. Capacitance Fig. 15. Gate Charge 16 10000 VCE = 300V I C = 40A I G = 10mA 12 f = 1 MHz Capacitance - picoFarrads 14 VG E - Volts 400 CE 10 8 6 4 C ies 1000 C oes 100 2 C res 0 10 0 30 60 90 120 150 0 5 10 15 20 25 30 35 40 V C E - Volts Q G - nanoCoulombs Fig . 16. M axim u m T r an s ie n t T h e r m al Re s is tan ce 0. 7 0 R ( t h ) J C - ºC / W 0. 6 0 0. 5 0 0. 4 0 0. 3 0 0. 2 0 0. 1 0 0. 0 0 1 10 10 0 Puls e W idth - millis ec onds © 2004 IXYS All rights reserved 1 0 00 IXGR 50N60C2 IXGR 50N60C2D1 160 A 140 IF 4000 nC 120 80 TVJ= 100°C VR = 300V 3000 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V A IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V 0 A/µs 1000 -diF/dt VF 0 Fig. 19 Reverse recovery charge Qr versus -diF/dt Fig. 18 Forward current IF versus VF 140 2.0 trr 1.5 Kf 600 A/µs 800 1000 -diF/dt 20 1.6 V VFR 15 µs tfr IF=120A IF= 60A IF= 30A 110 1.2 VFR tfr 120 1.0 400 Fig. 20 Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V ns 130 200 10 0.8 5 0.4 IRM 100 0.5 Qr 90 0.0 80 0 40 80 120 °C 160 TVJ= 100°C IF = 60A 0 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 21 Dynamic parameters Qr, IRM versus TVJ Fig. 22 Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 23 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399 0.001 0.0001 0.00001 DSEP 2x61-06A 0.0001 0.001 0.01 s 0.1 1 t Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344