BF959 VHF Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 20 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 3.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg 2 EMITTER MARKING DIAGRAM TO−92 CASE 29 STYLE 21 1 2 THERMAL CHARACTERISTICS Characteristic 3 BASE Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 BF959 A Y WW G ORDERING INFORMATION BF959 BF959G BF959RL1 BF959RL1G BF959ZL1 BF959ZL1G © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 3 1 = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BF 959 AYWW G G Package Shipping† TO−92 5000 Units/Box TO−92 (Pb−Free) 5000 Units/Box TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BF959/D BF959 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 30 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 − − Vdc ICBO − − 100 nAdc 35 40 − − − − OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) − − 1.0 Vdc Base −Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) − − 1.0 Vdc 700 600 − − − − SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MHz Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Cre − 0.65 − pF Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 W, f = 200 MHz) Nf − 3.0 − dB http://onsemi.com 2 BF959 500 1000 200 200 100 100 mV hFE , DC CURRENT GAIN 500 50 40 30 50 40 30 20 20 1 2 3 4 5 10 20 30 50 10 100 1.6 1.6 1.4 1.4 1.2 1 0.8 2V 0.6 3 4 5 10 20 10 V 5V 20 30 40 50 50 50 100 1.2 Cib 1 0.8 Cob 0.6 0.2 100 30 Cre 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current−Gain − Bandwidth Product Figure 4. Capacitances 500 200 VCE = 10 V g22e VCE = 10 V Y22e ( μs) 2 b22e 300 g11e 5 4 3 Y11e (ms) 10 0.4 10 b11e 1 0.5 0.4 0.3 100 50 40 30 20 0.2 0.1 4 5 Figure 2. VCE(sat) at IC/IB = 10 1.8 2 3 Figure 1. hFE at 10 V 1.8 1 2 IC, COLLECTOR CURRENT (mA) 2.0 0.4 1 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) f, T CURRENT−GAIN BANDWIDTH PRODUCT (GHz) 10 1 2 3 4 5 10 20 30 50 10 100 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Input Impedance at 30 MHz Figure 6. Output Impedance at 30 MHz http://onsemi.com 3 50 BF959 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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