N-Channel MOSFET 600V, 8A, 1.0Ω General Description Features The MDF8N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF8N60 is suitable device for SMPS, high Speed switching and general purpose applications. D @ Tjmax @ VGS = 10V @ VGS = 10V Applications G VDS = 600V VDS = 660V ID = 8.0A RDS(ON) ≤ 1.0Ω Power Supply PFC High Current, High Speed Switching S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage TC=25 C VDSS 600 V 660 V VGSS ±30 V 8.0 A 4.9 A 32 A 46 W W/ oC ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation o Derate above 25 C Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Unit VDSS @ Tjmax o Continuous Drain Current (※) Rating PD 0.37 EAR 4.6 mJ Dv/dt 4.5 V/ns EAS 320 mJ TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 2.71 o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) (1) Thermal Resistance, Junction-to-Case Nov2009. Version 2.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDF8N60 N-channel MOSFET 600V MDF8N60 Part Number Temp. Range Package Packing RoHS Status MDF8N60TH -55~150oC TO-220F Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0 IDSS VDS = 600V, VGS = 0V - - 1 µA IGSS VGS = ±30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 4.0A gfs VDS = 30V, ID = 4.0A Forward Transconductance V - 100 nA 0.85 1.0 Ω 8.5 - S - 21 - - 6.2 - - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 8.6 Input Capacitance Ciss - 895 VDS = 480V, ID = 8.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss - 5 Output Capacitance Coss - 105 Turn-On Delay Time td(on) - 26 - 42 - 43 tf - 27 IS - 11 Rise Time tr Turn-Off Delay Time Fall Time td(off) VGS = 10V, VDS = 300V, ID = 8.0A, RG = 25Ω(3) nC pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD trr IS = 8.0A, VGS = 0V IF = 8.0A, dl/dt = 100A/µs(3) Qrr - - A 1.4 V - 350 ns - 3.3 µC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤8.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=9.0mH, IAS=8.0A, Nov2009. Version 2.2 VDD=50V, Rg =25Ω, Starting TJ=25°C 2 MagnaChip Semiconductor Ltd. MDF8N60 N-channel MOSFET 600V Ordering Information 2.0 14 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 12 ID,Drain Current [A] 11 10 1.8 1.6 RDS(ON) [Ω ] 13 9 8 7 6 5 1.4 VGS=10.0V 1.2 VGS=20V 1.0 4 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 3 2 1 0.8 0.6 5 10 15 20 0 5 10 VDS,Drain-Source Voltage [V] ID,Drain Current [A] 1.2 3.0 ※ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1. VGS = 10 V 2. ID = 4.0A 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 1.1 1.0 0.9 0.8 -50 200 0 o IDR Reverse Drain Current [A] -55℃ 25℃ 1 0.1 2 4 6 200 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 10 150℃ 25℃ 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Nov2009. Version 2.2 150 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. VDS=30V 150℃ 100 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 10 50 o TJ, Junction Temperature [ C] ID [A] 15 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF8N60 N-channel MOSFET 600V 15 ※ Note : ID = 8A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 C oss 120V 300V 1400 Capacitance [pF] VGS, Gate-Source Voltage [V] 1600 8 480V 6 4 1200 C iss 1000 800 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 600 C rss 2 400 200 0 0 0 2 4 6 8 10 12 14 16 18 1 20 Fig.7 Gate Charge Characteristics 10 Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 10 10 µs 100 µs 1 8 1 ms 10 ms 1s 10 10 0 ID, Drain Current [A] ID, Drain Current [A] 10 100 ms DC -1 -2 10 -1 6 4 2 Single Pulse TJ=Max rated TC=25℃ 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 16000 D=0.5 single Pulse RthJC = 2.71℃/W TC = 25℃ 14000 0 10 12000 10000 0.1 Power (W) Zθ JC(t), Thermal Response 0.2 0.05 -1 10 0.02 0.01 2000 0 1E-5 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Nov2009. Version 2.2 6000 4000 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=2.71℃/W single pulse 8000 4 MagnaChip Semiconductor Ltd. MDF8N60 N-channel MOSFET 600V 2000 10 MDF8N60 N-channel MOSFET 600V Physical Dimensions 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified S y mbol A b b1 C D E e F G L L1 Q Q1 ￠R Nov2009. Version 2.2 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 5 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Nov2009. Version 2.2 6 MagnaChip Semiconductor Ltd. MDF8N60 N-channel MOSFET 600V Worldwide Sales Support Locations