BFR380F NPN Silicon RF Transistor Preliminary data High current capability and low figure for 2 3 wide dynamic range application Low voltage operation 1 Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380F Marking FCs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 14 Total power dissipation1) Ptot 380 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 95°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 145 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jan-24-2003 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 6 9 - V ICBO - - 100 nA IEBO - - 1 µA hFE 60 100 200 Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 40 mA, VCE = 3 V 2 Jan-24-2003 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 11 14 - Ccb - 0.47 0.7 Cce - 0.2 - Ceb - 1 - Fmin - 1.1 - - 13.5 - - 9 - Unit GHz IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) Gma IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz |S21|2 Insertion power gain dB VCE = 3 V, IC = 40 mA, f = 1.8 GHz, ZS = ZL = 50 - 11 - - 6.5 - IP3 - 29 - P-1dB - 16 - VCE = 3 V, IC = 40 mA, f = 3 GHz, ZS = ZL = 50 Third order intercept point at output2) dBm VCE = 3 V, IC = 40 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output3) IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3DC current at no input power 3 Jan-24-2003 BFR380F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: 9.965 fA IS = BF = 116.376 - NF = 1.107 - VAF = 27.69 V IKF = 736 mA ISE = 0.2676 fA NE = 1.64 - BR = 22.802 - NR = 1.056 - VAR = 30 V IKR = 0.011 A ISC = 6.9739 pA NC = 1.678 - 9.71 IRB = 0.2564 mA RBM = 1.322 RB = RE = 221 m RC = 0.101 CJE = 116.7 fF VJE = 0.782 V MJE = 0.5 - TF = 8.789 ps XTF = 0.496 - VTF = 0.338 V ITF = 1.529 mA PTF = 0 deg CJC = 840 fF VJC = 6.949 V MJC = 0.472 - XCJC = 0.202 - TR = 6.949 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - NK = 0.5 - EG = 1.11 eV XTI = 0 - FC = 0.975 TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C3 E C5 EHA07524 L1 = 0.556 nH L2 = 0.675 nH L3 = 0.381 nH C1 = 43 fF C2 = 123 fF C3 = 66 fF C4 = 10 fF C5 = 36 fF C6 = 47 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 Jan-24-2003 BFR380F Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 10 3 400 mW K/W RthJS P tot 300 250 10 2 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb = (VCB ) Ptotmax/PtotDC = (tp) f = 1MHz 10 1 1.6 Ptotmax/PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ccb 1.2 1 0.8 0.6 0.4 0.2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 V 16 VCB 5 Jan-24-2003 BFR380F Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) (Output, ZS=ZL=50) f = 1GHz VCE = parameter, f = 1.8GHz VCE = parameter 16 GHz 32 dBm 28 4V 26 3V 5V 14 3V 13 22 20 11 18 10 16 1V 1V 9 14 8 12 0.7V 7 10 6 8 5 6 4 0 2V 12 2V fT IP 3 24 10 20 30 40 50 60 70 mA 4 0 90 10 20 30 40 50 60 70 80 mA IC 100 IC Power gain Gma, Gms = (IC ) Power gain Gma, Gms = (IC) f = 0.9GHz f = 1.8GHz VCE = parameter VCE = parameter 21 15 dB dB 5V 5V 3V 19 13 18 2V G G 3V 17 2V 11 16 1V 10 1V 15 9 14 13 0 12 10 20 30 40 50 60 70 80 mA 0.7V 8 0.7V 7 0 100 IC 10 20 30 40 50 60 70 80 mA 100 IC 6 Jan-24-2003 BFR380F Power Gain Gma, Gms = (f) Power Gain |S21|² = (f) VCE = parameter VCE = parameter 45 40 Ic = 40mA dB Ic = 40mA dB 35 30 30 25 G G 5V 2V 1V 0.7V 5V 2V 1V 0.7V 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 GHz 0 0 4.5 0.5 1 1.5 2 2.5 3.5 GHz 3 f f Power Gain Gma, Gms = (VCE ): Power gain Gma, Gms = (IC ) |S21|² = (VCE): - - - - VCE = 2V f = parameter f = parameter 21 Ic = 40mA dB 20 dB 0.9GHz 19 0.9GHz 17 18 16 0.9GHz 17 15 G G 16 15 14 13 14 1.8GHz 12 13 1.8GHz 11 12 10 1.8GHz 11 8 9 7 8 6 1 2 3 4 5 6 V 2.4GHz 9 10 7 0 4.5 5 0 8 VCE 3GHz 4GHz 20 40 60 80 mA 110 IC 7 Jan-24-2003 BFR380F Noise figure NF = (IC ) VCE = 3V, f = 1,8 GHz Source impedance for min. noise figure vs. frequency VCE = 3 V 4 +j50 dB +j25 F 3.2 F50 +j100 +j10 2.8 0.9GHz 0 2.4 1.8GHz 10 25 50 100 2.4GHz 2 3GHz Fmin -j10 1.6 4GHz 8mA 40mA -j25 1.2 -j100 -j50 0.8 0 10 20 30 40 50 60 70 mA 90 IC 8 Jan-24-2003