Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 1/ 9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE050N15ARJ3 BVDSS ID@TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=15A Features 150V 20A 48 mΩ(typ) • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTE050N15ARJ3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Ordering Information Device Package TO-252 MTE050N15ARJ3-0-T3-G (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE050N15ARJ3 CYStek Product Specification Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current @L=0.1mH Single Pulse Avalanche Energy @ L=0.5mH, ID=20 Amps, VDD=50V Repetitive Avalanche Energy TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAR 150 ±20 20 14 4.3 3.4 60 40 EAS 100 (Note 3) EAR (Note 1) PD 6 60 30 2.5 1.6 -55~+175 (Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 5) (Note 1) (Note 2) (Note 2) ID IDSM PDSM Tj, Tstg *Drain current limited by maximum junction temperature Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC (Note 2) (Note 4) RθJA Value 2.5 50 110 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. 100% tested by conditions of VDD=50V, L=0.1mH, VGS=10V, IAS=10A MTE050N15ARJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 150 ∆BVDSS/∆Tj VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - Typ. Max. Unit Test Conditions 0.13 14.4 48 4.0 ±100 1 25 65 V V/°C V S nA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=10A VGS=±20V, VDS=0V VDS =120V, VGS =0V VDS =120V, VGS =0V, Tj=125°C VGS =10V, ID=15A 22.7 5.7 5.5 14.2 16.6 28.6 8.8 1269 76 10 - nC VDD=75V, ID=15A,VGS=10V ns VDD=75V, ID=10A, VGS=10V, RG=3Ω pF VGS=0V, VDS=80V, f=1MHz 0.85 54 124 20 60 1.2 - μA A V ns nC IS=10A, VGS=0V VGS=0V, IF=10A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTE050N15ARJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V ID, Drain Current(A) 50 40 BVDSS, Normalized Drain-Source Breakdown Voltage 60 5.5V 5V 30 VGS=4.5 V 20 10 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=6V VGS=4.5V 100 VGS=10V 10 1.0 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 150 ID=15A 120 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 90 60 30 0 0 MTE050N15ARJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 2.4 VGS=10V, ID=15A RDS(ON) @Tj=25°C : 48mΩ typ. 2.0 1.6 1.2 0.8 VGS=6V, ID=10A RDS(ON) @Tj=25°C : 53mΩ typ. 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 10 Crss f=1MHz 1 0 10 20 30 40 50 60 VDS, Drain-Source Voltage(V) 70 1.2 ID=1mA 1.0 0.8 0.6 ID=250μA 0.4 -75 -50 -25 80 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 ID=15A VDS=5V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=10V 0.1 Pulsed Ta=25°C 0.01 0.001 8 VDS=75V VDS=30V 6 4 VDS=120V 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 20 Qg, Total Gate Charge(nC) 24 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 25 100 ID, Maximum Drain Current(A) 10μs RDS(ON) Limited ID, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 100μs 1ms 10 10ms 1 TC=25°C, Tj(max)=175°C VGS=10V,RθJC=2.5°C/W Single Pulse 100ms DC 20 15 10 Tj(max)=150°C,RθJC=2.5°C/W, VGS=10V, Single Pulse 5 0 0.1 0.1 MTE050N15ARJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Case 60 3000 50 2500 40 2000 Power (W) ID, Drain Current (A) VDS=10V 30 1500 20 1000 10 500 0 0 1 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) 9 10 TJ(MAX) =175°C TC=25°C RθJC=2.5°C/W 0 1E-05 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r (t), Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM -TC=PDM *RθJC(t) 4.RθJC=2.5°C/W 0.05 0.02 0.01 0.01 0.001 1.E-05 MTE050N15ARJ3 Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTE050N15ARJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE050N15ARJ3 CYStek Product Specification Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 9/ 9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 E050N 15AR Device Name Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE050N15ARJ3 CYStek Product Specification