FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter - Low EMI and High Efficiency Features Description Optimized for Valley Switching (VSC) A Valley Switching Converter generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ-series is an integrated Pulse-Width Modulation (PWM) controller and SenseFET specifically designed for valley switching operation with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout, Leading Edge Blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry. Low EMI through Variable Frequency Control and Inherent Frequency Modulation High-Efficiency through Minimum Voltage Switching Narrow Frequency Variation Range over Wide Load and Input Voltage Variation Advanced Burst-Mode Operation for Low Standby Power Consumption Pulse-by-Pulse Current Limit Various Protection Functions: Overload Protection (OLP), Over-Voltage Protection (OVP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) Under-Voltage Lockout (UVLO) with Hysteresis Internal Start-up Circuit Internal High-Voltage SenseFET (650V) Built-in Soft-Start (15ms) Compared with discrete MOSFET and PWM controller solutions, the FSQ-series reduces total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform that is well suited for costeffective designs of valley switching fly-back converters. Applications Power Supply for DVP Player and DVD Recorder, Set-Top Box Adapter Auxiliary Power Supply for PC, LCD TV, and PDP TV Related Application Notes AN-4137, AN-4141, AN-4147, AN-4150 (Flyback) AN-4134 (Forward) FPSTM is a trademark of Fairchild Semiconductor Corporation. © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) September 2007 Product Number(5) PKG. FSQ311 8-DIP FSQ311L 8-LSOP FSQ321 8-DIP FSQ321L 8-LSOP FSQ0165RN 8-DIP FSQ0165RL 8-LSOP FSQ0265RN 8-DIP FSQ0265RL 8-LSOP FSQ0365RN 8-DIP FSQ0365RL 8-LSOP Maximum Output Power(1) Current Limit RDS(ON) Max. -40 to +85C 0.6A -40 to +85°C Operating Temp. 230VAC±15%(2) 85-265VAC Replaces Devices Adapter(3) Open-Frame(4) Adapter(3) Open-Frame(4) 19Ω 7W 10W 6W 8W FSDL321 FSDM311 0.6A 19Ω 8W 12W 7W 10W FSDL321 FSDM311 -40 to +85°C 0.9A 10Ω 10W 15W 9W 13W FSDL0165RN -40 to +85°C 1.2A 6Ω 14W 20W 11W 16W FSDM0265RN FSDM0265RNB -40 to +85°C 1.5A 4.5Ω 17.5W 25W 13W 19W FSDM0365RN FSDM0365RNB Notes: 1. The junction temperature can limit the maximum output power. 2. 230VAC or 100/115VAC with doubler. The maximum power with CCM operation. 3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature. 4. Maximum practical continuous power in an open-frame design at 50°C ambient. 5. Pb-free package per JEDEC J-STD-020B. © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 2 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Ordering Information FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Typical Circuit VO AC IN Vstr PWM Sync Drain GND Vcc Vfb FSQ0365RN Rev.00 Figure 1. Typical Flyback Application Internal Block Diagram Sync 4 Vstr Vcc 5 2 Drain 6 7 8 + OSC 0.7V/0.2V + + Vref VCC Idelay Vfb 3 0.35/0.55 VBurst Vref VCC good - 8V/12V IFB PWM 3R R SoftStart S LEB 200ns Q Gate driver R Q AOCP VSD 6V Sync Vovp TSD S 2.5μs time delay Q 1 VOCP (1.1V) GND R Q 6V VCC good FSQ0365RN Rev.00 Figure 2. Functional Block Diagram © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 3 GND D Vcc 8-DIP D Vfb 8-LSOP V D Sync Vstr FSQ0365RN Rev.01 Figure 3. Pin Configuration (Top View) Pin Definitions Pin # Name 1 GND SenseFET source terminal on primary side and internal control ground. Vcc Positive supply voltage input. Although connected to an auxiliary transformer winding, current is supplied from pin 5 (Vstr) via an internal switch during startup (see Internal Block Diagram Section). It is not until VCC reaches the UVLO upper threshold (12V) that the internal start-up switch opens and device power is supplied via the auxiliary transformer winding. Vfb The feedback voltage pin is the non-inverting input to the PWM comparator. It has a 0.9mA current source connected internally while a capacitor and optocoupler are typically connected externally. There is a time delay while charging external capacitor Cfb from 3V to 6V using an internal 5μA current source. This time delay prevents false triggering under transient conditions but still allows the protection mechanism to operate under true overload conditions. 4 Sync This pin is internally connected to the sync-detect comparator for valley switching. Typically the voltage of the auxiliary winding is used as Sync input voltage and external resistors and capacitor are needed to make time delay to match valley point. The threshold of the internal sync comparator is 0.7V/0.2V. 5 Vstr This pin is connected to the rectified AC line voltage source. At start-up the internal switch supplies internal bias and charges an external storage capacitor placed between the Vcc pin and ground. Once the Vcc reaches 12V, the internal switch is opened. 6,7,8 Drain The drain pins are designed to connect directly to the primary lead of the transformer and are capable of switching a maximum of 700V. Minimizing the length of the trace connecting these pins to the transformer will decrease leakage inductance. 2 3 Description © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 4 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Pin Configuration Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified. Symbol Characteristic Min. Max. Unit VSTR Vstr Pin Voltage 500 V VDS Drain Pin Voltage 650 V VCC Supply Voltage VFB Feedback Voltage Range VSync Sync Pin Voltage Range IDM Drain Current Pulsed(6) 20 V -0.3 9.0 V -0.3 9.0 V FSQ0365 12 FSQ0265 8 FSQ0165 4 FSQ321/311 1.5 FSQ0365 230 FSQ0265 140 FSQ0165 50 EAS Single Pulsed Avalanche Energy(7) PD Total Power Dissipation TJ Recommended Operating Junction Temperature TA FSQ321/311 TSTG ESD A mJ 10 1.5 W -40 Internally limited °C Operating Ambient Temperature -40 85 °C Storage Temperature -55 150 °C Human Body Model(8) CLASS1 C Machine Model(8) CLASS B Notes: 6. Repetitive rating: Pulse width limited by maximum junction temperature. 7. L=51mH, starting TJ=25°C. 8. Meets JEDEC standards JESD22-A114 and JESD22-A115. Thermal Impedance Symbol Parameter Value Unit 8-DIP(9) θJA(10) Junction-to-Ambient Thermal Resistance 80 θJC(11) Junction-to-Case Thermal Resistance 20 θJT(12) Junction-to-Top Thermal Resistance 35 °C/W Notes: 9. All items are tested with the standards JESD 51-2 and 51-10 (DIP). 10. Free-standing, with no heat-sink, under natural convection. 11. Infinite cooling condition - refer to the SEMI G30-88. 12. Measured on the package top surface. © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 5 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Absolute Maximum Ratings TA = 25°C unless otherwise specified. Symbol Parameter Condition Min. Typ. Max. Unit SenseFET Section BVDSS Drain Source Breakdown Voltage VCC = 0V, ID = 100µA IDSS Zero-Gate-Voltage Drain Current VDS = 560V RDS(ON) Drain-Source On-State Resistance(13) 650 FSQ0365 3.5 4.5 FSQ0265 5.0 6.0 8.0 10.0 14.0 19.0 FSQ0165 TJ = 25°C, ID = 0.5A FSQ321/311 CSS Input Capacitance FSQ0365 315 FSQ0265 550 FSQ0165 VGS = 0V, VDS = 25V, f = 1MHz Output Capacitance FSQ0365 47 38 VGS = 0V, VDS = 25V, f = 1MHz Reverse Transfer Capacitance 18 FSQ0365 9.0 FSQ0265 17.0 FSQ0165 VGS = 0V, VDS = 25V, f = 1MHz Turn-On Delay Time 3.8 FSQ0365 11.2 FSQ0265 20.0 FSQ0165 VDD = 350V, ID = 25mA Rise Time 9.5 FSQ0365 34 FSQ0265 15 FSQ0165 VDD = 350V, ID = 25mA Turn-Off Delay Time 19 FSQ0365 28.2 FSQ0265 55.0 FSQ0165 VDD = 350V, ID = 25mA Fall Time 33.0 FSQ0365 32 FSQ0265 25 FSQ0165 ns 30.0 FSQ321/311 tf ns 4 FSQ321/311 td(off) ns 12.0 FSQ321/311 tr pF 10.0 FSQ321/311 td(on) pF 25 FSQ321/311 CRSS Ω 162 FSQ0265 FSQ0165 µA pF 250 FSQ321/311 COSS V 100 VDD = 350V, ID = 25mA ns 10 FSQ321/311 42 Control Section tON.MAX1 Maximum On Time1 tON.MAX2 Maximum On Time2 All but Q321 TJ = 25°C 10.5 12.0 13.5 µs Q321 TJ = 25°C 6.35 7.06 7.77 µs tB1 Blanking Time1 All but Q321 13.2 15.0 16.8 µs tB2 Blanking Time2 Q321 7.5 8.2 © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 µs www.fairchildsemi.com 6 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Electrical Characteristics TA = 25°C unless otherwise specified. Symbol Parameter tW Detection Time Window Condition Min. Typ. Max. Unit TJ = 25°C, Vsync = 0V 3.0 µs fS1 Initial Switching Freq.1 All but Q321 50.5 55.6 61.7 kHz fS2 Initial Switching Freq.2 Q321 84.0 89.3 95.2 kHz ΔfS Switching Frequency Variation(14) -25°C < TJ < 85°C ±5 ±10 % IFB Feedback Source Current VFB = 0V 700 900 1100 µA Minimum Duty Cycle VFB = 0V 0 % 11 12 13 V 8 9 DMIN VSTART VSTOP UVLO Threshold Voltage After turn-on 7 V tS/S1 Internal Soft-Start Time1 All but Q321 With free-running frequency 15 ms tS/S2 Internal Soft-Start Time2 Q321 With free-running frequency 10 ms Burst Mode Section VBURH VBURL TJ = 25°C, tPD = 200ns(15) Burst-Mode Voltage 0.45 0.55 0.65 V 0.25 0.35 0.45 V 200 VBUR(HYS) mV Protection Section ILIM Peak Current Limit FSQ0365 TJ = 25°C, di/dt = 240mA/µs 1.32 1.50 1.68 FSQ0265 TJ = 25°C, di/dt = 200mA/µs 1.06 1.20 1.34 FSQ0165 TJ = 25°C, di/dt = 175mA/µs 0.8 0.9 1.0 FSQ321 TJ = 25°C, di/dt = 125mA/µs 0.53 0.60 0.67 TJ = 25°C, di/dt = 112mA/µs 0.53 0.60 0.67 Shutdown Feedback Voltage VCC = 15V 5.5 6.0 6.5 V Shutdown Delay Current VFB = 5V 5 6 µA FSQ311 VSD IDELAY A tLEB Leading-Edge Blanking Time(14) VOVP Over-Voltage Protection tOVP Over-Voltage Protection Blanking Time TSD Thermal Shutdown Temperature(14) 4 200 VCC = 15V, VFB = 2V ns 5.5 6.0 6.5 V 2 3 4 µs 125 140 155 °C 0.55 0.70 0.85 V 0.14 0.20 0.26 V Sync Section VSH VSL tSync Sync Threshold Voltage Sync Delay Time(14)(16) 300 ns Total Device Section IOP ISTART ICH VSTR Oper. Supply Current (Control Part Only) VCC = 15V 1 3 5 mA Start Current VCC = VSTART - 0.1V (before VCC reaches VSTART) 270 360 450 µA Start-up Charging Current VCC = 0V, VSTR = min. 40V 0.65 0.85 1.00 mA Minimum VSTR Supply Voltage 26 V Notes: 13. Pulse test: Pulse-Width=300μs, duty=2% 14. Though guaranteed, it is not 100% tested in production. 15. Propagation delay in the control IC. 16. Includes gate turn-on time. © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 7 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Electrical Characteristics (Continued) Function FSDM0x65RNB FSQ-Series Operation method Constant frequency PWM Valley switching operation EMI reduction Frequency modulation Valley switching & inherent frequency modulation FSQ-Series Advantages Improved efficiency by valley switching Reduced EMI noise Reduce EMI noise by two ways Improved standby power by valley switch- Burst-mode operation Fixed burst peak Protection ing also in burst-mode Advanced burst-mode Because the current peak during burst operation is dependent on VFB, it is easier to solve audible noise Improved reliability through precise abnor- AOCP mal over-current protection © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 8 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Comparison Between FSDM0x65RNB and FSQ-Series 1.2 1.2 1.0 1.0 Normalized Normalized These characteristic graphs are normalized at TA= 25°C. 0.8 0.6 0.4 0.2 0.0 -25 0.8 0.6 0.4 0.2 0 25 50 75 100 0.0 -25 125 0 Temperature [°C] 1.2 1.2 1.0 1.0 0.8 0.6 0.4 0.2 100 125 0.6 0.4 0.2 0 25 50 75 100 0.0 -25 125 0 25 50 75 100 125 Temperature [°C] Figure 6. UVLO Stop Threshold Voltage (VSTOP) vs. TA Figure 7. Start-up Charging Current (ICH) vs. TA 1.2 1.2 1.0 1.0 Normalized Normalized 75 0.8 Temperature [°C] 0.8 0.6 0.4 0.2 0.0 -25 50 Figure 5. UVLO Start Threshold Voltage (VSTART) vs. TA Normalized Normalized Figure 4. Operating Supply Current (IOP) vs. TA 0.0 -25 25 Temperature [°C] 0.8 0.6 0.4 0.2 0 25 50 75 100 0.0 -25 125 Temperature [°C] 25 50 75 100 125 Temperature [°C] Figure 8. Initial Switching Frequency (fS) vs. TA Figure 9. Maximum On Time (tON.MAX) vs. TA © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 0 www.fairchildsemi.com 9 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Typical Performance Characteristics 1.2 1.2 1.0 1.0 Normalized Normalized These characteristic graphs are normalized at TA= 25°C. 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 0.0 -25 125 0 Temperature [°C] 1.2 1.2 1.0 1.0 0.8 0.6 0.4 100 125 0.8 0.6 0.4 0 25 50 75 100 0.0 -25 125 0 25 50 75 100 125 Temperature [°C] Temperature [°C] Figure 12. Shutdown Delay Current (IDELAY) vs. TA Figure 13. Burst-Mode High Threshold Voltage (Vburh) vs. TA 1.2 1.2 1.0 1.0 Normalized Normalized 75 0.2 0.2 0.8 0.6 0.4 0.8 0.6 0.4 0.2 0.2 0.0 -25 50 Figure 11. Feedback Source Current (IFB) vs. TA Normalized Normalized Figure 10. Blanking Time (tB) vs. TA 0.0 -25 25 Temperature [°C] 0 25 50 75 100 0.0 -25 125 Figure 14. Burst-Mode Low Threshold Voltage (Vburl) vs. TA 25 50 75 100 125 Figure 15. Peak Current Limit (ILIM) vs. TA © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 0 Temperature [°C] Temperature [°C] www.fairchildsemi.com 10 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Typical Performance Characteristics (Continued) 1.2 1.2 1.0 1.0 Normalized Normalized These characteristic graphs are normalized at TA= 25°C. 0.8 0.6 0.4 0.2 0.0 -25 0.8 0.6 0.4 0.2 0 25 50 75 100 0.0 -25 125 0 Temperature [°C] 50 75 100 125 Figure 17. Sync Low Threshold Voltage (VSL) vs. TA 1.2 1.2 1.0 1.0 Normalized Normalized Figure 16. Sync High Threshold Voltage (VSH) vs. TA 0.8 0.6 0.4 0.2 0.0 -25 25 Temperature [°C] 0.8 0.6 0.4 0.2 0 25 50 75 100 0.0 -25 125 Temperature [°C] 25 50 75 100 125 Temperature [°C] Figure 18. Shutdown Feedback Voltage (VSD) vs. TA Figure 19. Over-Voltage Protection (VOP) vs. TA © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 0 www.fairchildsemi.com 11 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Typical Performance Characteristics (Continued) 2.2 Leading Edge Blanking (LEB): At the instant the internal SenseFET is turned on, a high-current spike usually occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the Rsense resistor would lead to incorrect feedback operation in the current mode PWM control. To counter this effect, the FPS employs a leading edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time (tLEB) after the SenseFET is turned on. 1. Startup: At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor (Ca) connected to the Vcc pin, as illustrated in Figure 20. When VCC reaches 12V, the FPS begins switching and the internal high-voltage current source is disabled. The FPS continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless VCC goes below the stop voltage of 8V. Vref VCC Idelay VDC VFB VO 3 FOD817A Ca D2 3R + VFB* KA431 VCC 5 FSQ0365RN Rev.00 OLP Rsense FSQ0365RN Rev. 00 Figure 21. Pulse-Width-Modulation (PWM) Circuit 3. Synchronization: The FSQ-series employs a valley switching technique to minimize the switching noise and loss. The basic waveforms of the valley switching converter are shown in Figure 22. To minimize the MOSFET's switching loss, the MOSFET should be turned on when the drain voltage reaches its minimum value, as shown in Figure 22. The minimum drain voltage is indirectly detected by monitoring the VCC winding voltage, as shown in Figure 22. Internal Bias Figure 20. Start-up Circuit 2. Feedback Control: FPS employs current mode control, as shown in Figure 21. An opto-coupler (such as the FOD817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the RSENSE resistor makes it possible to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, thus pulling down the feedback voltage and reducing the duty cycle. This event typically happens when the input voltage is increased or the output load is decreased. Vds VRO VRO VDC tF Vsync Vovp (6V) 2.1 Pulse-by-Pulse Current Limit: Because current mode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (VFB*), as shown in Figure 21. Assuming that the 0.9mA current source flows only through the internal resistor (3R + R = 2.8k), the cathode voltage of diode D2 is about 2.5V. Since D1 is blocked when the feedback voltage (VFB) exceeds 2.5V, the maximum voltage of the cathode of D2 is clamped at this voltage, thus clamping VFB*. Therefore, the peak value of the current through the SenseFET is limited. 0.7V 0.2V 300ns Delay MOSFET Gate ON ON FSQ0365RN Rev.00 Figure 22. Valley Resonant Switching Waveforms © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 - VSD Vref VCC good Gate driver R Vstr ICH 8V/12V SenseFET OSC D1 CB 2 IFB www.fairchildsemi.com 12 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Functional Description voltage. If the output consumes more than this maximum power, the output voltage (VO) decreases below the set voltage. This reduces the current through the optocoupler LED, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (VFB). If VFB exceeds 2.8V, D1 is blocked and the 5µA current source starts to charge CB slowly up to VCC. In this condition, VFB continues increasing until it reaches 6V, when the switching operation is terminated, as shown in Figure 24. The delay time for shutdown is the time required to charge CB from 2.8V to 6V with 5µA. A 20 ~ 50ms delay time is typical for most applications. VFB FSQ0365RN Rev.00 Overload protection 6.0V 2.8V VDS Power on Fault occurs t12= CFB*(6.0-2.8)/Idelay Fault removed t1 t2 t Figure 24. Overload Protection 4.2 Abnormal Over-Current Protection (AOCP): When the secondary rectifier diodes or the transformer pins are shorted, a steep current with extremely high-di/dt can flow through the SenseFET during the LEB time. Even though the FSQ-series has OLP (Overload Protection), it is not enough to protect the FSQ-series in that abnormal case, since severe current stress is imposed on the SenseFET until OLP triggers. The FSQ-series has an internal AOCP (Abnormal Over-Current Protection) circuit as shown in Figure 25. When the gate turn-on signal is applied to the power SenseFET, the AOCP block is enabled and monitors the current through the sensing resistor. The voltage across the resistor is compared with a preset AOCP level. If the sensing resistor voltage is greater than the AOCP level, the set signal is applied to the latch, resulting in the shutdown of the SMPS. VCC 12V 8V t Fault situation Normal operation Figure 23. Auto Restart Protection Waveforms 4.1 Overload Protection (OLP): Overload is defined as the load current exceeding its normal level due to an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in the normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the Sense FET is limited, and therefore the maximum input power is restricted with a given input 3R OSC PWM LEB 200ns S Q R Q Gate driver R Rsense AOCP FSQ0365RN Rev.00 - Normal operation + FSQ0365RN Rev. 00 1 GND VOCP Figure 25. Abnormal Over-Current Protection © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 13 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) 4. Protection Circuits: The FSQ-series has several self-protective functions, such as Overload Protection (OLP), Abnormal Over-Current protection (AOCP), OverVoltage Protection (OVP), and Thermal Shutdown (TSD). All the protections are implemented as autorestart mode. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes VCC to fall. When VCC falls down to the Under-Voltage Lockout (UVLO) stop voltage of 8V, the protection is reset and start-up circuit charges VCC capacitor. When the VCC reaches the start voltage of 12V, the FSQ-series resumes normal operation. If the fault condition is not removed, the SenseFET remains off and VCC drops to stop voltage again. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Because these protection circuits are fully integrated into the IC without external components, the reliability is improved without increasing cost. VO VOset VFB 0.55V 0.35V IDS VDS time 4.4 Thermal Shutdown (TSD): The SenseFET and the control IC are built in one package. This makes it easy for the control IC to detect the abnormal over temperature of the SenseFET. If the temperature exceeds ~150°C, the thermal shutdown triggers. FSQ0365RN Rev.00 t2 t3 Switching disabled t4 Figure 26. Waveforms of Burst Operation 7. Switching Frequency Limit: To minimize switching loss and EMI (Electromagnetic Interference), the MOSFET turns on when the drain voltage reaches its minimum value in valley switching operation. However, this causes switching frequency to increases at light load conditions. As the load decreases, the peak drain current diminishes and the switching frequency increases. This results in severe switching losses at light-load condition, as well as intermittent switching and audible noise. Because of these problems, the valley switching converter topology has limitations in a wide range of applications. 5. Soft-Start: The FPS has an internal soft-start circuit that increases PWM comparator inverting input voltage with the SenseFET current slowly after it starts up. The typical soft-start time is 15ms, The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. This mode helps prevent transformer saturation and reduces stress on the secondary diode during startup. To overcome this problem, FSQ-series employs a frequency-limit function, as shown in Figures 27 and 28. Once the SenseFET is turned on, the next turn-on is prohibited during the blanking time (tB). After the blanking time, the controller finds the valley within the detection time window (tW) and turns on the MOSFET, as shown in Figures 27 and 28 (Cases A, B, and C). If no valley is found during tW, the internal SenseFET is forced to turn on at the end of tW (Case D). Therefore, our devices have a minimum switching frequency of 55kHz and a maximum switching frequency of 67kHz, as shown in Figure 28. 6. Burst Operation: To minimize power dissipation in standby mode, the FPS enters burst-mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 26, the device automatically enters burst-mode when the feedback voltage drops below VBURL (350mV). At this point, switching stops and the output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes VBURH (550mV), switching resumes. The feedback voltage then falls and the process repeats. Burst-mode operation alternately enables and disables switching of the power SenseFET, thereby reducing switching loss in standby mode. © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 t1 Switching disabled www.fairchildsemi.com 14 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) 4.3 Over-Voltage Protection (OVP): If the secondary side feedback circuit malfunctions or a solder defect causes an opening in the feedback path, the current through the opto-coupler transistor becomes almost zero. Then, VFB climbs up in a similar manner to the overload situation, forcing the preset maximum current to be supplied to the SMPS until the overload protection triggers. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the overload protection triggers, resulting in the breakdown of the devices in the secondary side. To prevent this situation, an OVP circuit is employed. In general, the peak voltage of the sync signal is proportional to the output voltage and the FSQ-series uses a sync signal instead of directly monitoring the output voltage. If the sync signal exceeds 6V, an OVP is triggered, shutting down the SMPS. To avoid undesired triggering of OVP during normal operation, the peak voltage of the sync signal should be designed below 6V. 67kHz IDS IDS A 59kHz 55kHz A B C Constant frequency D tB=15μs Burst mode ts IDS IDS B PO FSQ0365RN Rev. 00 tB=15μs Figure 28. Switching Frequency Range ts IDS IDS C tB=15μs ts IDS IDS tB=15μs tsmax=18μs D tW=3μs FSQ0365RN Rev. 00 Figure 27. Valley Switching with Limited Frequency © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 15 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) When the resonant period is 2μs tsmax=18μs Application Input Voltage Range FPS Device DVD Player Power Supply FSQ0365RN Rated Output Power Output Voltage (Max. Current) 19W 5.1V (1.0A) 3.4V (1.0A) 12V (0.4A) 16V (0.3A) 85-265VAC Features High efficiency ( >77% at universal input) Low standby mode power consumption (<1W at 230VAC input and 0.5W load) Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft-start (15ms) Key Design Notes The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms). The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input voltage can be adjusted. The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pulsating noises and to improved surge immunity. 1. Schematic C209 47pF T101 EER2828 RT101 5D-9 1 R105 100kΩ C104 10nF 630V R102 56kΩ C103 33μF 400V 1 BD101 Bridge Diode 3 4 3 4 C102 100nF,275VAC Sync 8 Drain 7 Drain 6 Drain FB Vcc Vstr C105 47nF 50V GND 1 12V, 0.4A 3 10 D202 UF4003 L203 D102 1N 4004 R104 12kΩ 4 C205 1000μF 10V C206 1000μF 10V L204 5 9 3.4V, 1A D204 SB360 D103 1N4148 C110 33pF 50V 5.1V, 1A D203 SB360 C208 1000μF 10V C207 1000μF 10V 8 C302 3.3nF C101 100nF 275VAC TNR 10D471K C204 470μF 35V 6 R103 5Ω R106 R107 6.2kΩ 6.2kΩ LF101 40mH C203 470μF 35V 12 C106 C107 100nF 22μF 2 SMD 50V ZD101 1N4746A C202 470μF 35V C201 470μF 35V L202 D101 1N 4007 IC101 FSQ0365RN 5 16V, 0.3A D201 UF4003 C210 47pF 2 R108 62Ω 2 L201 11 R201 510Ω R203 6.2kΩ R202 1kΩ R204 20kΩ C209 100nF IC202 FOD817A F101 FUSE IC201 KA431 AC IN R205 6kΩ FSQ0365RN Rev:00 Figure 29. Demo Circuit of FSQ0365RN © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 16 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Typical Application Circuit of FSQ0365RN EER2828 12 1 Np/2 Np/2 11 N16V Np/2 2 3 Na 4 10 N12V N12V 9 N 3.4V Na 8 5 N16V N5.1V 6mm 3mm N3.4V 7 Np/2 6 N 5.1V FSQ0365RN Rev: 00 Figure 30. Transformer Schematic Diagram of FSQ0365RN 3. Winding Specification No Pin (s→f) Wire 0.25φ 3→2 Np/2 Turns ×1 Winding Method 50 Center Solenoid Winding 4 Center Solenoid Winding 2 Center Solenoid Winding 16 Center Solenoid Winding 14 Center Solenoid Winding 18 Center Solenoid Winding 50 Center Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2 Layers 0.33φ × 2 9→8 N3.4V Insulation: Polyester Tape t = 0.050mm, 2 Layers 0.33φ × 1 6→9 N5V Insulation: Polyester Tape t = 0.050mm, 2 Layers 0.25φ × 1 4→5 Na Insulation: Polyester Tape t = 0.050mm, 2 Layers N12V 0.33φ × 3 10 → 12 Insulation: Polyester Tape t = 0.050mm, 3 Layers N16V 0.33φ × 3 11 → 12 Insulation: Polyester Tape t = 0.050mm, 2 Layers 0.25φ × 1 2→1 Np/2 Insulation: Polyester Tape t = 0.050mm, 2 Layers 4. Electrical Characteristics Pin Specification Remarks Inductance 1-3 1.4mH ± 10% 100kHz, 1V Leakage 1-3 25µH Max. Short all other pins 5. Core & Bobbin Core: EER2828 (Ae=86.66mm2) Bobbin: EER2828 © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 17 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) 2. Transformer Part Value Note Part Value Note Resistor Inductor R102 56kΩ 1W L201 10µH R103 5Ω 1/2W L202 10µH R104 12kΩ 1/4W L203 4.9µH R105 100kΩ 1/4W L204 4.9µH R106 6.2kΩ 1/4W R107 6.2kΩ 1/4W Diode D101 IN4007 R108 62Ω 1W D102 IN4004 R201 510Ω 1/4W ZD101 1N4746A R202 1kΩ 1/4W D103 1N4148 R203 6.2kΩ 1/4W D201 UF4003 R204 20kΩ 1/4W D202 UF4003 R205 6kΩ 1/4W D203 SB360 D204 SB360 Capacitor C101 100nF/275VAC Box Capacitor C102 100nF/275VAC Box Capacitor C103 33µF/400V Electrolytic Capacitor IC101 FSQ0365RN FPS™ C104 10nF/630V Film Capacitor IC201 KA431 (TL431) Voltage reference C105 47nF/50V Mono Capacitor IC202 FOD817A Opto-coupler C106 100nF/50V SMD (1206) C107 22µF/50V Electrolytic Capacitor Fuse 2A/250V C110 33pF/50V Ceramic Capacitor C201 470µF/35V Electrolytic Capacitor C202 470µF/35V Electrolytic Capacitor C203 470µF/35V Electrolytic Capacitor C204 470µF/35V Electrolytic Capacitor C205 1000µF/10V Electrolytic Capacitor C206 1000µF/10V Electrolytic Capacitor C207 1000µF/10V Electrolytic Capacitor C208 1000µF/10V Electrolytic Capacitor C209 100nF /50V Ceramic Capacitor IC Fuse NTC RT101 5D-9 BD101 2KBP06M2N257 Bridge Diode Line Filter LF101 40mH Transformer T101 Varistor TNR © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 Bridge Diode 10D471K www.fairchildsemi.com 18 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) 6. Demo Board Part List Application Input Voltage Range FPS Device DVD Player Power Supply FSQ311 Rated Output Power Output Voltage (Max. Current) 8W 5.1V (0.9A) 3.3V (0.9A) 12V (0.03A) 16V (0.03A) 85-265VAC Features High efficiency ( >70% at universal input) Low standby mode power consumption (<1W at 230VAC input and 0.5W load) Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft-start (15ms) Key Design Notes The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms). The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input voltage can be adjusted. The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pulsating noises and to improved surge immunity. 1. Schematic C1 4.7nF D2 1N4007 D3 1N4007 L2 660μH C6 10μF 400V RS6 200Ω C7 10μF 400V 5 4 3 C17 47nF 50V Vstr Sync Vfb 8 Drain 7 Drain 6 Drain Vcc 2 2 11 3 10 -12V, 0.03A D1 UF4003 C2 100μF 35V C3 100μF 35V L3 DS1 1N 4007 U1 FSQ311 D5 1N4007 AC IN CS5 6.8nF 680V RS5 150kΩ R2 100kΩ L1 12 1 F1 FUSE D6 1N4007 T1 EE1927 RT1 5D-9 FB1 Ferritebead C104* C14 100nF 22μF SMD 50V GND 1 ZR1 1.2kΩ D8 1N 4004 C5 100μF 35V L5 7 6 5.1V, 0.9A D7 SB360 5 ZD1 1N4746A C12 680μF 10V C11 680μF 10V 8 L6 9 D10 1N4148 R11 R7 6.2kΩ 6.2kΩ C18 33pF 50V C4 100μF 35V 11 R4* 5Ω R5 12kΩ 12V, 0.03A D4 UF4003 3.3V, 0.9A D9 SB360 C16 680μF 10V C15 680μF 10V 8 R6 510Ω R10 6.2kΩ * : optional components R8 1kΩ R12 8kΩ C19 68nF U3 FOD817A U2 TL431 R13 6kΩ Figure 31. Demo Circuit of FSQ311 © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 19 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Typical Application Circuit of FSQ311 3mm EE1927 Np/2 Np/2 12 1 TAPE 4T N-12V 11 2 NVCC 5 1 NVcc 2 TAPE 2T 6 Shield winding TAPE 2T 5 (0.1~0.15φ) ` 9 Lp/2(0.2φ) (0.1~0.15φ) 10 N 12V 3 3mm N12V & N-12V 12 (0.1~0.15φ) N3.3V 11 8 8 8 9 9 9 N5V 8 8 8 7 7 7 (0.2φ,3parallel) Shield winding 7 2 N5V Lp/2(0.2φ) 1 TAPE 2T TAPE 1T TAPE 1T TAPE 1T 1 (0.1~0.15φ) 6 1 10 N3.3V (0.2φ,3parallel) 8 11 1 TAPE 1T TAPE 2T TAPE 1T 3 Bottom of bobbin Figure 32. Transformer Schematic Diagram of FSQ311 3. Winding Specification No Pin (s→f) Wire Np/2 3→2 0.2φ × 1 Insulation: Polyester Tape t = 0.025mm, 2 Layers Shield 1 → open 0.1φ × 2 Insulation: Polyester Tape t = 0.025mm, 1 Layer N5V 7→8 0.2φ × 3 Insulation: Polyester Tape t = 0.025mm, 1 Layer N3.3V 9→8 0.2φ × 3 Insulation: Polyester Tape t = 0.025mm, 1 Layer N12V 10 → 11 0.1φ × 1 N-12V 11 → 12 0.1φ × 3 Insulation: Polyester Tape t = 0.025mm, 1 Layer Shield 1 → open 0.1φ × 2 Insulation: Polyester Tape t = 0.025mm, 2 Layers NVCCV 5→6 0.1φ × 1 Insulation: Polyester Tape t = 0.025mm, 2 Layers Np/2 2→1 0.2φ × 1 Insulation: Polyester Tape t = 0.025mm, 4 Layers Turns Winding Method 111 Solenoid Winding, 2 Layers Shield winding 15 Center Solenoid Winding 10 Center Solenoid Winding 30 33 Solenoid Winding Solenoid Winding Shield winding 36 Center Solenoid Winding 111 Solenoid Winding, 2 Layers 4. Electrical Characteristics Pin Specification Remarks Inductance 1-3 2.1mH ± 10% 66kHz, 1V Leakage 1-3 100µH Max. Short all other pins 5. Core & Bobbin Core: EE1927 (Ae=23.4mm2) Bobbin: EE1927 © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 20 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) 2. Transformer Part Value Note Part Value Resistor Note Inductor R2 100kΩ 1/4W L2 660µH ZR1 1.2kΩ 1/4W L1 4.7µH R4 5Ω 1/2W L3 4.7µH R5 12kΩ 1/4W L5 4.7µH R7 6.2kΩ 1/4W L6 4.7µH R11 6.2kΩ 1/4W RS5 150kΩ 2W D2,3,4,5 IN4007 RS6 200Ω 1W D8 IN4004 R6 510Ω 1/4W D10 1N4148 Diode R8 1kΩ 1/4W ZD1 1N4746A R12 8kΩ 1/4W DS1 1N4007 R10 6.2kΩ 1/4W, 1% D1 UF4003 R13 6kΩ 1/4W, 1% D4 UF4003 D7 SB360 C6 10µF/400V Electrolytic D9 SB360 C7 10µF/400V Electrolytic C17 47nF/50V Ceramic U1 FSQ311 FPS™ C104 100nF/50V SMD(1206) U2 KA431 (TL431) Voltage reference C14 22µF/50V Electrolytic U3 FOD817A Opto-coupler C18 33pF/50V Ceramic CS5 6.8nF/680V Film C2 100µF/35V Electrolytic C3 100µF/35V Electrolytic C4 100µF/35V Electrolytic C5 100µF/35V Electrolytic Capacitor C11 680µF/10V Electrolytic C12 680µF/10V Electrolytic C15 680µF/10V Electrolytic C16 680µF/10V Electrolytic C19 68nµF/50V Ceramic C1 4.7nF/375VAC Ceramic IC Fuse 2A/250V RT1 5D-9 NTC Transformer T1 EE1927 Bridge Diode Ferrite bead FB1 © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 Fuse www.fairchildsemi.com 21 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) 6. Demo Board Part List FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Package Dimensions 9.83 9.00 6.67 6.096 8.255 7.61 3.683 3.20 5.08 MAX 7.62 0.33 MIN 3.60 3.00 (0.56) 2.54 0.56 0.355 0.356 0.20 9.957 7.87 1.65 1.27 7.62 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MS-001 VARIATION BA B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. D) DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994 E) DRAWING FILENAME AND REVSION: MKT-N08FREV2. Figure 33. 8-Lead, Dual In-Line Package(DIP) © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 22 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) Package Dimensions (Continued) MKT-MLSOP08ArevA Figure 34. 8-Lead, LSOP Package © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 23 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 www.fairchildsemi.com 24