UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: UTC BC546, VCEO=65V UTC BC547, VCEO=45V UTC BC548, VCEO=30V 1 TO-92 ORDERING INFORMATION Order Number Lead Free Halogen Free BC546L-x-T92-B BC546G-x-T92-B BC546L-x-T92-K BC546G-x-T92-K BC547L-x-T92-B BC547G-x-T92-B BC547L-x-T92-K BC547G-x-T92-K BC548L-x-T92-B BC548G-x-T92-B BC548L-x-T92-K BC548G-x-T92-K Note: Pin Assignment: C: Collector B: Base E: Emitter Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 C B E C B E C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk BC546L-x-T92-B (1)Packing Type (1) B: Tape Box, K: Bulk (2)Package Type (2) T92: TO-92 (3)Rank (3) x: refer to CLASSIFICATION OF hFE (4)Halogen Free (4) L: Lead Free, G: Halogen Free MARKING BC546 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD BC547 BC548 1 of 4 QW-R201-037.D BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 80 V Collector-base voltage VCBO 50 V 30 V 65 V Collector-emitter voltage VCEO 45 V 30 V 6 V Emitter-base voltage VEBO 6 V 5 V Collector current (DC) IC 100 mA Collector dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Cut-off Current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Current gain bandwidth product Output Capacitance Input Capacitance Noise Figure SYMBOL TEST CONDITIONS ICBO VCB=30V, IE=0 hFE VCE=5V, IC=2mA IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5mA IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5mA VCE=5V, IC=2mA VBE(ON) VCE=5V, IC=10mA fT VCE=5V, IC=10mA, f=100MHz Cob VCB=10V, IE=0, f=1MHz Cib VEB=0.5V, IC=0, f=1MHz NF VCE=5V, IC=200μA, f=1KHz, RG=2KΩ MIN TYP 110 580 90 200 700 900 660 300 3.5 9 2 MAX UNIT 15 nA 800 250 mV 600 mV mV mV 700 mV 720 mV MHz 6 pF pF 10 dB CLASSIFICATION OF hFE RANK hFE A 110 - 220 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 200 – 450 C 420 - 800 2 of 4 QW-R201-037.D Current Gain-Bandwidth Prouct, fT Saturation Voltage, VBE(sat), VCE(sat), (V) DC Current Gain, hFE Collect current, IC(mA) Collector Current , IC(mA) Capacitance, Cob(pF) BC546/547/548 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-037.D 3 of 4 BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-037.D