UTC BC547L-X-T92-K Switching and amplifier application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC546/547/548
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS

FEATURES
* High Voltage: UTC BC546, VCEO=65V
UTC BC547, VCEO=45V
UTC BC548, VCEO=30V
1
TO-92

ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
BC546L-x-T92-B
BC546G-x-T92-B
BC546L-x-T92-K
BC546G-x-T92-K
BC547L-x-T92-B
BC547G-x-T92-B
BC547L-x-T92-K
BC547G-x-T92-K
BC548L-x-T92-B
BC548G-x-T92-B
BC548L-x-T92-K
BC548G-x-T92-K
Note: Pin Assignment: C: Collector B: Base
E: Emitter
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
BC546L-x-T92-B

(1)Packing Type
(1) B: Tape Box, K: Bulk
(2)Package Type
(2) T92: TO-92
(3)Rank
(3) x: refer to CLASSIFICATION OF hFE
(4)Halogen Free
(4) L: Lead Free, G: Halogen Free
MARKING
BC546
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
BC547
BC548
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
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
80
V
Collector-base voltage
VCBO
50
V
30
V
65
V
Collector-emitter voltage
VCEO
45
V
30
V
6
V
Emitter-base voltage
VEBO
6
V
5
V
Collector current (DC)
IC
100
mA
Collector dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cut-off Current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Current gain bandwidth product
Output Capacitance
Input Capacitance
Noise Figure

SYMBOL
TEST CONDITIONS
ICBO
VCB=30V, IE=0
hFE
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
VBE(SAT)
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VBE(ON)
VCE=5V, IC=10mA
fT
VCE=5V, IC=10mA, f=100MHz
Cob
VCB=10V, IE=0, f=1MHz
Cib
VEB=0.5V, IC=0, f=1MHz
NF
VCE=5V, IC=200μA, f=1KHz, RG=2KΩ
MIN
TYP
110
580
90
200
700
900
660
300
3.5
9
2
MAX UNIT
15
nA
800
250
mV
600
mV
mV
mV
700
mV
720
mV
MHz
6
pF
pF
10
dB
CLASSIFICATION OF hFE
RANK
hFE
A
110 - 220
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
200 – 450
C
420 - 800
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Current Gain-Bandwidth Prouct, fT
Saturation Voltage, VBE(sat), VCE(sat), (V)
DC Current Gain, hFE
Collect current, IC(mA)
Collector Current , IC(mA)

Capacitance, Cob(pF)
BC546/547/548
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
QW-R201-037.D
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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