Diode Semiconductor Korea AG01Y - - - AG01A VOLTAGE RANGE: 70--- 600 V CURRENT: 0.5---1.0 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High crrent capability Easily cleaned with freon, alcohol, lsopropand and similar solvents DO-41 MECHANICAL DATA Case: JEDEC DO-41, molded plastic Terminals: Axial leads,solderable per MIL-STD-202, Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. AG01Y AG01Z AG01 AG01A UNITS Maximum peak repetitive reverse voltage V RRM 100 200 400 600 Maximum RMS voltage V RMS 70 140 280 420 Maximum DC blocking voltage VDC 100 200 400 600 Maximum average forw ard rectified current v 9.5mm lead length, @TA=75 IF(AV) 1.0 IFSM 25 15 A VF 1.2 1.8 V 0.7 0.5 V A Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ IF=IF(AV) Maximum reverse current 100 @TA=25 X A IR at rated DC blocking voltage @TA=100 500 50 Maximum reverse recovery time (Note1) t rr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) RθJC 22 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range 20 ns 15 pF /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance junction to case. www.diode.kr Diode Semiconductor Korea GAG01Y - - - GAG01A FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 50 N 1. 10 N 1. +0.5A D.U.T. (+) 25VDC (approx) (-) 0 -0.25A PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE -1.0A 1cm SET TIMEBASEFOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . AG01Z-AG01 10 AG01Y AG01A 1 0.1 0.01 TJ =25 Pulse Width=300ns 0.001 0.4 0.8 1.2 1.6 2.0 2.4 2.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES 20 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 30 25 20 AG01Y 15 AG01Z--AG01A 10 5 0 1 T J =25 8.3ms Single Half Sine-Wave 5 10 NUMBER OF CYCLES AT 60Hz 50 Single Phase Half W ave 60Hz Resistive or Inductive Load AG01Y 1.2 AG01Z,AG01 0.9 AG01A 0.6 0.3 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT AMPERES FIG.4 -- PEAK FORWARD SURGE CURRENT Z 1.5 200 100 60 40 AG01Y-AG01 20 10 AG01A 4 TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr