MABC-001000-DPS00L GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +5 V Rev. V1 Features Robust GaN Protection at Any Power Up/Power Down Sequence Fixed Gate with Pulsed Drain Bias Voltage. AddOn Module Allows for Gate Pulsing Open Drain Output Current of ≤ 200 mA for External MOSFET Switch Drive 30 dB Typical EMI/RFI Rejection at All I/O Ports 6.60 x 22.48 mm 2 Package with 1 mm Pitch SMT Leads Target ≤ 500 ns Total Switch Transition Time Low Power Dissipation < 100 mW Gate Bias Output Current ≤ 50 mA for Heavy RF Compression RoHS* Compliant and 260°C Reflow Compatible Description The MABC-001000-DPS00L is a Low Power Dissipation bias controller that provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). Applicable DUT’s include depletion-mode GaN (Gallium Nitride) or GaAs (Gallium Arsenide) power amplifiers or HEMT devices. The module also provides bias sequencing so that pulsed drain voltage cannot be applied to a DUT unless the negative gate bias voltage is present. The applications section of this datasheet will show how the module can be implemented for the following two applications: Application Option 1: Fixed negative gate biasing with pulsed drain biasing. Application Option 2: Pulsed negative gate biasing with pulsed drain biasing. Both of these application options will recommend the external circuitry and p-Channel Power MOSFET. The MABC-001000-DP000L module can also be installed onto an MABC-001000-PB2PPR evaluation board for evaluation, test, and characterization purposes. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. Functional Schematic GND GND GFB 14 1 NC 2 - GCO 3 + GCI 4 VGS 5 6 13 + - ENS 11 P4V 10 NC 9 SWG 8 NC 7 NC GND Pin Configuration1 Pin No. Label Function 1 GFB Gate Voltage (-) Feedback 2,6,8,10 NC No Connection 3 GCO Gate Voltage (-) Control Output 4 GCI Gate Voltage (-) Control Input 5 VGS Gate (-) Supply Voltage 7,13,14 GND Ground 9 SWG Driver Output to MOS Switch Gate 11 P4V +5 V VCC Input 12 ENS MOS Switch Enable TTL 1. This Configuration is for Fixed Gate Bias. Unused package pins must be left open and not connected to ground. Ordering Information Part Number Packaging MABC-001000-DPS00L Tray MABC-001000-DPS0TL Tape & Reel2 MABC-001000-PB2PPR Gate and Drain Pulsing Evaluation Board3 2. Reference Application Note M513 for reel size information. 3. Specify eval. board configuration when ordering: Application Option 1 or 2. See Applications Section for option details. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 12 MABC-001000-DPS00L GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +5 V Rev. V1 Electrical Characteristics: TA = 25°C Symbol Parameter Conditions Min Typ Max Unit VCC Supply Voltage, Positive 4.3 5 5.5 V ICC Supply Current, Positive - 13 - mA VGS Supply Voltage, Negative -8 -6 0 V IGS Supply Current, Negative - -3 - mA VENL Input Voltage, Logic 0, Pulse Enable 0 0 0.3 V VENH Input Voltage, Logic 1, Pulse Enable 2 3.3 4.3 V Input Current, Pulse Enable - 40 - uA VGTH Input, Gate Feedback Threshold to VGS - 2.7 - V VDTH Input, Drain Feedback Threshold - 65% SWG - V VGC Output Voltage, Pulsed/Fixed Gate -8 -3.5 0 V VGCR Output Voltage, Pulsed/Fixed Gate Ripple - 50 - mVp-p Output Gate Current, Peak - 50 - mA - 4M - Ω - 1.2 - Ω - 100 200 mA IEN IGC ROFF Output Drive, Open Drain, OFF State RON Output Drive, Open Drain, ON State ION Output Drive, Current, ON State Absolute Maximum Ratings4,5 VDS = 50 V Temp. = +85°C Recommended Operating Conditions Parameter Absolute Maximum Parameter Typical Supply (+) Voltage, VCC +4.3 V to +5.5 V Supply (+) Voltage, VCC +4.8 V to +5 V Supply (-) Voltage, VGS -10 V to 0 V Supply (-) Voltage, VGS -8 V to -2 V Logic Voltage, ENS, GSE -0.3 V to +4.5 V Logic Voltage, ENS, GSE 0 V to +4.3 V Analog (-) Voltage, GCI, GFB -10 V to 0 V Analog (-) Voltage, GCI, GFB -8 V to -2 V Switch Driver Voltage, SWG 0 V to +60 V Switch Driver Sink Current, SWG -1 mA to -200 mA Switch Driver Sink Current, SWG -200 mA Operating Temperature -40°C to +85°C Lead Soldering Temp (10 s) +260°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MABC-001000-DPS00L GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +5 V Rev. V1 Timing Characteristics: TA = 25°C Symbol Parameter Conditions Open Drain ON Propagation Delay7 tD1 tD3 Open Drain OFF Propagation Delay tRISE1 tFALL1 RPULL-UP = 700 Ω VDD = 50 V IR = 71 mA avg. Switch Disconnected 7 Open Drain Rise Time8 Open Drain Fall Time 8 MOS Switch ON Propagation Delay7 tD1 tD3 MOS Switch OFF Propagation Delay tRISE1 MOS Switch Rise Time tFALL1 MOS Switch Fall Time8 8 RLOAD = 1200 Ω VDD = 50 V ILOAD = 42 mA avg. 7 tD2 Gate Bias ON Propagation Delay tD4 Gate Bias OFF Propagation Delay7 tRISE2 Gate Bias Rise Time tFALL2 8 Gate Bias Fall Time 7 MOS CISS = 760 pF RDS,ON = 205 mΩ 8 Min Typ Max Unit - 100 150 ns - 70 100 ns - 116 150 ns - 58 100 ns - 200 - ns - 1100 - ns - 126 - ns - 820 - ns - 156 200 ns - 148 200 ns - 55 100 ns - 44 100 ns 7. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest. 8. Rise and fall times are measured between 10% and 90% of the steady state signal. Timing Diagrams EXTERNAL +5V TO ENABLE LOGIC +5V Vcc ENS TTL PULSE ENABLE FOR GATE & DRAIN SWITCH +5V 0 SWG VOD +50V VDS 9 VDD (Q1) 0 +50V 90% 0 10% 90% OPEN DRAIN OUTPUT 10% MOSFET SWITCH OUTPUT -3V GCO VGS -8V 90% 90% 10% 10% PULSED GATE OUTPUT RF RF RF OUTPUT t D1 3 t RISE1 t D2 t RISE2 t D4 t FALL2 t D3 t FALL1 9. Q1 refers to an external p-Channel MOSFET that pulses the drain of the DUT. See Applications Section for more information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MABC-001000-DPS00L GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +5 V Rev. V1 Applications Section Functional Description The MABC-001000-DPS00L GaN Bias Controller/ Sequencer Module circuitry provides proper sequencing and generation of the gate voltage and pulsed drain voltage for a device under test (DUT). Reference the Product View and Pin Configuration table on page 1. The basic functions of the circuits within the module are described as follows: Overhead Voltages for the Circuits within the MABC-001000-DPS00L Module ○ Pin 11 (P4V) is the +5V Vcc Input that supplies the positive voltage for the circuits within the module. ○ Pin 5 (VGS) is the Gate (-) Supply Voltage that is also used to supply the negative voltage for the circuits within the module. Negative Gate Voltage for the Device Under Test (DUT) ○ A voltage follower op-amp circuit provides a low impedance output to Pin 3 (GCO) Gate Voltage (-) Control Output. Pin 3 (GCO) output is connected to the gate terminal of a DUT as shown in Figure 1 on page 5. ○ The reference voltage for the voltage follower is provided by the Pin 4 (GCI) Gate Voltage (-) Analog Input. This input reference voltage is developed by an external potentiometer/ resistive divider circuit as shown in Figure 1 on page 5. It is recommended to use the -8 V to -3 V voltage that is also applied to Pin 5 (VGS). ○ Reference: The external potentiometer is adjusted to set the gate voltage Pin 3 (GCO) to the DUT. Alternative voltage inputs such as a temperature compensation circuit or a Digital-to-Analog (DAC) converter could also be supplied to Pin 4 (GCI). Pin 9 (SWG) MOS Switch Driver Output ○ An N-Channel MOSFET develops the pulsed signal (SWG) to drive the resistive divider network for the gate of an external p-Channel HEXFET as shown in Figure 1 on page 5. The input signal for the internal MOSFET is provided by the output from the sequencing circuits. Sequencing Circuits ○ A voltage comparator circuit senses if the negative gate voltage is present as an input on Pin 1 (GFB) - Gate Voltage (-) Feedback. ○ A logic circuit provides the switched input enable signal for the N-Channel MOSFET. The following 3 signals must be at correct levels to generate the enable logic signal: Pin 12 (ENS) MOS Switch Enable TTL Negative gate voltage (GFB) is present P4V voltage is present. 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MABC-001000-DPS00L GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +5 V Rev. V1 Applications Section Module Layout Guidelines Application Option 1: Reference the Product View, Pin Configuration Table on page 1, and the Recommended Landing Pattern on page 7. Fixed Gate with Pulsed Drain Biasing The following recommendations should be followed when the MABC-001000-DPS00L module is used to bias a high-power RF device or amplifier. The input and output locations were determined so that the layout and signal routing could be optimized when interfacing with a high-power amplifier assembly. Figure 1 shows a block diagram of the MABC-001000-DPS00L module with the recommended external components to support this application option. See Table 1 for component recommendations and values. +5 V R4 R1 The negative gate voltage input and outputs are located on the left side of the module and should be located as close as possible to the gate bias pads on the high - power am plif ier assembly. The positive pulsed voltages are located on the right side of the module and should be located as close as possible to the external MOSFET switch. The MOSFET switch drain should be located as close as possible to the drain bias pads on the high-power amplifier assembly. The charge storage capacitors should be located as close as possible to the MOSFET switch source terminal pads. The module ground pads are located at Pins 7, 13, and 14. Route all signal lines and ground returns to be as short as possible and implement a ground plane on the back of the printed wiring board (PWB) if that option is available to the designer. Following these layout criteria will minimize circuit parasitics that degrade the performance of the pulsed signal. +50 V R5 1 3 VR1 4 -8 V MABC-001000DPS00L CSTORAGE 11 R2 9 R3 5 6 Q1 TTL DUT RFIN CIN RFOUT COUT Figure 1. Fixed Gate/Pulsed Drain Biasing Part Value MFG MFG P/N R1 2.7 kΩ Panasonic ERJ-2GEJ272X R2,R3 1.02 kΩ Vishay CRCW25121K02FKEGHP R4,R5 402 Ω Vishay CRCW2512402RFKEG VR1 10 kΩ Bourns 3224W-1-103E Q1 P-Channel MOSFET IR IRF5210SPBF Table 1. Recommended Parts List for Fixed Gate/Pulsed Drain Biasing 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MABC-001000-DPS00L GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +5 V Rev. V1 Applications Section Application Option 2: Pulsed Gate and Pulsed Drain Biasing A block diagram showing a typical application of the MABC-001000-PB2PPR sample board is shown in Figure 2 below. Figures 3 and 4 show layouts of the MABC-001000-PB2PPR sample board with/without the MABC-001000-DPS00L module installed. The additional external circuitry on the MABC-001000-PB2PPR sam ple board provides the added capability of pulsed gate biasing. It is important to note that the evaluation boards can be configured for either Option 1 or 2. A Full schematic, assembly layout, and Bill of Materials are available upon request. +50 V TTL Figure 3. Populated MABC-001000-PB2PPR Evaluation Board -8 V DUT VDD P4V +5 V TTL RFIN -8V RFOUT MABC-001000PB2PPR VG_B VG_A VD_PULSED VD_PULSED MABC-001000PB2PPR +5 V P4V RFOUT RFIN -8V TTL VDD DUT -8 V TTL (a) +50 V (b) Figure 2. Pulsed Gate/Pulsed Drain Biasing: (a) North Biasing; (b) South Biasing Figure 4. MABC-001000-PB2PPR with MABC-001000-DPS00L Mounted Multiple GaN Device Control (No RF redundancy) Typical Application Circuits IN GaN OUT IN GaN OUT Single GaN Device Control GaN IN 6 VPOT VTEMP DAC 32 -8VDC 4 5 PWM OUT MABC-001000-DPS00L MABC-001000-000DPM 6 +5V 11 10 9 8 50VDC VPOT VTEMP DAC 32 -8VDC 4 5 PWM MABC-001000-000DPM MABC-001000-DPS00L 6 +5V 11 10 9 8 50VDC M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MABC-001000-DPS00L GaN Bias Controller/Sequencer Module Dual Supply: -8 to -3 V, +5 V Rev. V1 Physical Dimensions10,11,12 Recommended Landing Pattern7 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity This module is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM class 1B devices. 10. All dimensions are in inches[mm]. 11. Reference Application Note M538 for lead-free solder reflow recommendations. 12. Plating is 100% Sn over BeCu. 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support