CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process on 50µm substrate thickness, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Gain & RLosses (dB) 20 Main Features ■ Performances : 27-30GHz ■ 29dBm output power @ 1dB comp. gain ■ 15 dB ± 1dB gain ■ DC power consumption, 850mA @ 6V ■ Chip size : 3.80 x 2.52 x 0.05 mm 15 10 5 S22 0 -5 -10 -15 S11 -20 20 22 24 26 28 30 32 34 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Fop Operating frequency range 27 G Small signal gain 14 15 dB P1dB Output power at 1dB gain compression 28 29 dBm Id Bias current 850 Max Unit 30 GHz 1000 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52962147 - 27-May-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36 27-30GHz High Power Amplifier CHA5296 Electrical Characteristics Tamb = +25°C, Vd = 6V Id #900mA Symbol Fop G ∆G Is P1dB Parameter Min Operating frequency range (1) 27 Small signal gain (1) 14 Typ Max Unit 30 GHz 15 dB Small signal gain flatness (1) ±1 dB Reverse isolation 50 dB Pulsed output power at 1dB compression (1) 28 29 dBm P03 Output power at 3dB gain compression (1) 29 30 dBm IP3 3 order intercept point (2) 41 dBm PAE Power added efficiency at Psat 16 % rd VSWRin 12 Input VSWR (2) 5:1 VSWRout Output VSWR (2) 2.5:1 Tj Junction temperature for 80°C backside 170 Id Bias current @ small signal 850 °C 1000 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 6.25 V Id Drain bias current 1450 mA Vg Gate bias voltage -2.5 to +0.4 V Vgd Negative gate drain voltage ( = Vg - Vd) -8 V Pin Maximum peak input power overdrive (2) +18 dBm Ta Operating temperature range -40 to +80 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52962147 - 27-May-02 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 27-30GHz High Power Amplifier CHA5296 Typical on Jig Measurements Bias conditions: Vd=6V, Vg tuned for Id = 850mA 20 15 Gain & RLosses (dB) 10 5 0 S22 -5 -10 S11 -15 -20 14 16 18 20 22 24 26 28 30 32 34 36 Frequency (GHz) 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1200 32GHz 28GHz 30GHz 30GHz Id 1100 26GHz 1000 28GHz 900 800 26GHz 30GHz Gain 700 28GHz 32GHz 600 30GHz 500 400 300 DC Total Drain Current Id (mA) Gain (dB) & PAE (%) Linear Gain & Return Losses versus frequency 200 32GHz PAE 100 0 21 22 23 24 25 26 27 28 29 30 31 32 33 Output power (dBm) Gain, PAE & DC drain current vs Output power @ different frequencies Ref. : DSCHA52962147 - 27-May-02 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 27-30GHz High Power Amplifier CHA5296 42 38 34 30 26 22 Output power (dBm) IP3=+41dBm Σ(F1;F2) 18 14 10 6 Σ((4F1-3F2);(4F2-3F1)) 2 -2 -6 Σ((3F1-2F2);(3F2-2F1)) -10 -14 -18 F=28,5GHz ∆F=10MHz -22 Σ((2F1-F2);(2F2-F1)) -26 -30 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Input Power(dBm) IP3 versus total input power @ 28.5GHz 60 55 50 C/I (dBc) & IP3 (dBm) 45 40 35 30 25 20 15 c/i3 10 c/i IP3 5 0 10 12 14 16 18 20 22 24 26 28 30 Total Fundamental Output power (dBm) C/I & IP3 versus total fund. output power @ 28.5GHz (∆F=10MHz) Ref. : DSCHA52962147 - 27-May-02 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 27-30GHz High Power Amplifier CHA5296 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA52962147 - 27-May-02 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 27-30GHz High Power Amplifier CHA5296 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 50µm thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5296-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52962147 - 27-May-02 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice