To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE FS5VS-6 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 (1.5) 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 300V ¡rDS (ON) (MAX) ................................................................. 1.6Ω ¡ID ............................................................................................ 5A 2.6 ± 0.4 4.5 0.8 e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 300 ±30 V V 5 15 60 A A W –55 ~ +150 –55 ~ +150 1.2 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. 300 ±30 — — — — — — ±10 V V µA — 2 — — — 3 1.2 2.4 1 4 1.6 3.2 mA V Ω V 1.6 — — — 2.5 270 55 10 — — — — S pF pF pF — — — — 11 13 32 22 — — — — ns ns ns ns — 1.5 2.0 V — — 2.08 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 10 50 100 150 101 7 5 3 2 tw=10µs 100 7 5 3 2 1ms 10–1 7 5 200 100µs 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 60W OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 6V 5 DRAIN CURRENT ID (A) 7V DRAIN CURRENT ID (A) 10ms DC TC = 25°C Single Pulse 8 TC = 25°C Pulse Test 6 6V 4 5V 2 PD= 60W 4 5.5V 3 TC = 25°C Pulse Test 5V 2 4.5V 1 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = 10A 24 16 8A 8 5A 3A 0 4 8 12 16 2 1 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 4 2 4 8 12 16 VDS = 10V Pulse Test TC = 25°C 3 2 75°C 125°C 100 7 5 3 2 10–1 –1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Ciss Coss 3 2 101 Crss 7 5 Tch = 25°C f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 20V TRANSFER CHARACTERISTICS (TYPICAL) 6 102 7 5 VGS = 10V 3 DRAIN CURRENT ID (A) 8 3 2 4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 TC = 25°C VDS = 50V Pulse Test 0 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 32 0 DRAIN CURRENT ID (A) 5 TC = 25°C Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 102 7 5 td(off) 3 2 tf td(on) 101 7 5 tr 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 50V 100V 12 200V 8 4 101 7 5 0 4 8 12 16 8 25°C 75°C 4 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C 12 GATE CHARGE Qg (nC) 3 2 10–1 VGS = 0V Pulse Test 16 0 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 20 Tch = 25°C ID = 5A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10–1 7 5 3 2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999