ON MUR480ERL Switchmode tm power rectifier Datasheet

MUR480E, MUR4100E
SWITCHMODEt
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
ULTRAFAST RECTIFIER
4.0 AMPERES, 800−1000 VOLTS
Features
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
•
•
•
•
•
•
•
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Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 V
These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
AXIAL LEAD
CASE 267
STYLE 1
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
•
•
•
260°C Max. for 10 Seconds
Shipped in Plastic Bags, 5,000 per Bag
Available Tape and Reel, 1,500 per Reel, by Adding a “RL’’ Suffix to
the Part Number
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
MUR480E
MUR4100E
VRRM
VRWM
VR
Value
A
MUR
4xxx
YYWW G
G
Unit
V
800
1000
Average Rectified Forward Current
(Square Wave; Mounting Method #3 Per Note 2)
IF(AV)
4.0 @
TA = 35°C
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
70
A
TJ, Tstg
−65 to
+175
°C
Operating Junction and Storage Temperature
Range
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
MUR4xxx = Device Number (see page 2)
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 7
1
Publication Order Number:
MUR480E/D
MUR480E, MUR4100E
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance, Junction−to−Ambient
Symbol
Value
Unit
RqJA
See Note 2
°C/W
Symbol
Max
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 Amps, TJ = 150°C)
(iF = 3.0 Amps, TJ = 25°C)
(iF = 4.0 Amps, TJ = 25°C)
vF
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 150°C)
(Rated dc Voltage, TJ = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/ms)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
trr
Maximum Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)
tfr
75
ns
WAVAL
20
mJ
1.53
1.75
1.85
mA
900
25
ns
100
75
Controlled Avalanche Energy (See Test Circuit in Figure 6)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
Axial Lead*
500 Units / Bulk
Axial Lead*
500 Units / Bulk
Axial Lead*
1500 / Tape & Reel
Axial Lead*
1500 / Tape & Reel
Axial Lead*
500 Units / Bulk
Axial Lead*
500 Units / Bulk
Axial Lead*
500 Units / Bulk
Axial Lead*
500 Units / Bulk
MUR4100ERL
Axial Lead*
1500 / Tape & Reel
MUR4100ERLG
Axial Lead*
1500 / Tape & Reel
Device
Marking
MUR480E
MUR480EG
MUR480ERL
MUR480E
MUR480ERLG
MUR480ES
MUR480ESG
MUR480ES
MUR4100E
MUR4100EG
MUR4100E
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
MUR480E, MUR4100E
MUR480E, MUR4100E
IR, REVERSE CURRENT (m A)
20
25°C
TJ = 175°C
10
100°C
7.0
3.0
2.0
100°C
25°C
*The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from these
same curves if VR is sufficiently below rated VR.
0
100
200
300
400
500
600
700
800
VR, REVERSE VOLTAGE (VOLTS)
0.7
Figure 2. Typical Reverse Current*
900 1000
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Rated VR
RqJA = 28°C/W
8.0
6.0
dc
4.0
SQUARE WAVE
2.0
0
50
100
150
200
vF, INSTANTANEOUS VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Typical Forward Voltage
Figure 3. Current Derating
(Mounting Method #3 Per Note 2)
10
250
70
60
50
TJ = 175°C
9.0
10
0
2
8.0
5.0
7.0
6.0
C, CAPACITANCE (pF)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
TJ = 175°C
1.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
5.0
1000
400
200
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0.004
0.002
0.001
10
5.0
(Capacitive IPK =20
IAV
Load)
4.0
dc
3.0
SQUAREWAVE
2.0
0
1.0
2.0
3.0
4.0
TJ = 25°C
30
20
10
9.0
8.0
7.0
1.0
0
40
5.0
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
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3
50
MUR480E, MUR4100E
+VDD
IL
40 mH COIL
BVDUT
VD
ID
MERCURY
SWITCH
ID
IL
DUT
S1
VDD
t0
Figure 6. Test Circuit
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
–V
DUT DD
t2
t
Figure 7. Current−Voltage Waveforms
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR4100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 V, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
EQUATION (1):
t1
Ǔ
500V
50mV
CH1
CH2
A
20ms
953 V
VERT
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
TIME BASE:
20 ms/DIV.
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
Figure 8. Current−Voltage Waveforms
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4
MUR480E, MUR4100E
NOTE 2 − AMBIENT MOUNTING DATA
Data shown for thermal resistance junction−to−ambient
(RqJA) for the mountings shown is to be used as typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR
Mounting
Method
1
2
RqJA
Lead Length, L (IN)
1/8
1/4
1/2
3/4
55
50
51
53
63
58
59
61
Units
°C/W
°C/W
28
°C/W
3
MOUNTING METHOD 1
P.C. Board Where Available Copper
Surface area is small.
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
L
L
MOUNTING METHOD 2
Vector Push−In Terminals T−28
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
L
L
MOUNTING METHOD 3
P.C. Board with
1−1/2 ″ x 1−1/2 ″ Copper Surface
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
L = 1/2 ″
Board Ground Plane
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5
MUR480E, MUR4100E
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
(DO−201AD)
ISSUE G
K
D
A
1
B
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
D
K
K
INCHES
MIN
MAX
0.287
0.374
0.189
0.209
0.047
0.051
1.000
−−−
MILLIMETERS
MIN
MAX
7.30
9.50
4.80
5.30
1.20
1.30
25.40
−−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MUR480E/D
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