SiC Silicon Carbide Diode 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Data Sheet Rev. 2.0, 2011-02-28 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDY10S120 Description The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDYxxS120 products are extending the already broad portfolio with the new TO-247HC (high creepage) package. The new package layout is fully compatible with the industry standard TO247, and can therefore easily be placed in already existing designs, with no extra efforts. The higher creepage distance increases the safety margin against the risk of short circuits, especially arcing, which might be triggered by the presence of dust or dirt inside the system. This reduces the need of additional chemical (silicone gel or creams) or mechanical (sheaths or foils) solutions to lower the pollution level between the leads, with all consequent benefits of a lean and faster manufacturing process Features • • • • • • • • Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Optimized for high temperature operation Benefits • • • • • • System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures and less fans Package design with high creepage distance Reduced EMI Applications • • Solar applications; UPS; Motor Drives; SMPS e.g.; CCM PFC Table 1 Key Performance Parameters Parameter Value Unit VDC 1200 V QC 14.4 nC IF @ TC < 150°C 10 Table 2 A Pin Definition Pin 1 Pin2 Pin 3 A C A Type / Ordering Code Package IDY10S120 PG-TO247HC-3 Marking D10S120 Related Links IFX SiC Diodes Webpage 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 4 Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Maximum ratings 2 Maximum ratings Table 3 Maximum ratings Parameter Symbol Values Unit Note / Test Condition A TC= < 150°C (leg/device) Min. Typ. Max. Continuous forward current IF - - 5/10 Surge non-repetitive IF, SM - - 29/58 TC= 25°C, tp = 10 ms - - 25/48 TC= 150°C, tp = 10 ms TC= 25°C, tp = 10 µs forward current, sine halfwave Non-repetitive peak forward current IF, max - - 125/250 i² t value ∫i²dt - - 4/16 - A²s TC= 25°C, tp = 10 ms 3/12 TC= 150°C, tp = 10 ms Repetitive peak reverse voltage VRRM - - 1200 V Tj= 25°C Diode dv/dt ruggedness dv/dt - - 50 V/ns VR= 0...960 V Power dissipation Ptot - - 75/150 W TC= 25 °C Operating and storage temperature Tj,Tstg -55 - 150 °C - - 0.6 Ncm Mounting torque 3 Thermal characteristics Table 4 Thermal characteristics Parameter Symbol Values M3 screws Maximum of mounting processes:3 Unit (leg/device) Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2/1 Thermal resistance, junction ambient RthJA - - 40 Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 Final Data Sheet 5 Note / Test Condition K/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 5 Static characteristics Parameter Symbol Values Unit Note / Test Condition V Tj= 25 °C, IR= 0.1 mA (leg/device) Min. Typ. Max. DC blocking voltage VDC 1200 - - Diode forward voltage VF - 1.65 1.8 - 2.55 - 5/10 120/240 - 20/40 500/1000 Reverse current Table 6 IR IF= 10 A, Tj= 25 °C IF= 10 A, Tj= 150 °C IR= 1200 V, Tj=25 °C µA IR= 1200 V, Tj=150 °C AC characteristics Parameter Symbol Values Unit Note / Test Condition VR= 400 V, F ≤I Fmax (leg/device) Total capacitive charge 1) Switching time Min. Typ. Max. Qc - 7.2/14.4 - nC tc - - <10 ns C - 250/500 - pF - 20/40 - VR= 300 V, f= 1 MHz - 18/36 - VR= 600 V, f= 1 MHz diF /dt =200 A/μs, Tj=150 °C VR= 1 V, f= 1 MHz 1) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. Final Data Sheet 6 Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 5 Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 7 Power dissipation (per leg) Typ. forward characteristic (per leg) Ptot = f(TC); parameter: RthJC(max) ; IF=f(VF); tp=400 µs; parameter: Tj ; IF=f(TC); per device the values double per device the values double Table 8 Diode forward current (per leg) Diode forward current (per device) Tj≤ 175 °C; parameter: RthJC(max) ; VF (max); D=tP /T Final Data Sheet Tj≤ 175 °C; parameter: RthJC(max) ; VF (max); D=tP /T 7 Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope1) (per leg) Typ. reverse current vs. reverse voltage (per leg) QD=f(diF/dt)4); Tj = 150 °C; IF ≤ IF max; per device the values double IR =f(VR); parameter: Tj ; per device the values double 1) Only capacitive charge occuring, guaranteed by design Table 10 Typ. transient thermal impedance (per leg) Typ. transient thermal impedance (per device) Zthjc=f(tP ) ; parameter: D = tP /T Zthjc=f(tP ) ; parameter: D = tP /T Final Data Sheet 8 Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Electrical characteristics diagrams Table 11 Typ. C stored energy (per leg) Typ. capacitance vs. reverse voltage (per leg) EC=f(VR); per device the values double C=f(VR); TC=25 °C, f=1 MHz; per device the values double Final Data Sheet 9 Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Package outlines 6 Package outlines Figure 1 Dimensions in mm/inches Final Data Sheet 10 Rev. 2.0, 2011-02-28 2nd Generation thinQ!™ SiC Schottky Diode IDY10S120 Revision History 7 Revision History 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode Revision History: 2011-02-28, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last revision) 2.0 Release of final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2011-02-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 11 Rev. 2.0, 2011-02-28