DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR18A PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistor BSR18A FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed saturated switching. DESCRIPTION handbook, halfpage 3 3 PNP switching transistor in a SOT23 plastic package. NPN complement: BSR17A. 1 MARKING 2 TYPE NUMBER 1 MARKING CODE BSR18A 2 Top view T92 MAM256 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V IC collector current (DC) − −100 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW hFE DC current gain IC = −10 mA; VCE = −1 V 100 300 fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz toff turn-off time ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA − 300 ns 1997 May 28 2 Philips Semiconductors Product specification PNP switching transistor BSR18A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA − 250 mW Tamb ≤ 25 °C Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 May 28 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification PNP switching transistor BSR18A CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER MAX. UNIT − −50 nA emitter cut-off current IC = 0; VEB = −6 V − −50 nA DC current gain VCE = −1 V; note 1; see Fig.2 IC = −0.1 mA 60 − IC = −1 mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA collector cut-off current IEBO hFE VBEsat MIN. IE = 0; VCB = −30 V ICBO VCEsat CONDITIONS 30 − collector-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 − −200 mV IC = −50 mA; IB = −5 mA; note 1 − −200 mV base-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 −650 −850 mV IC = −50 mA; IB = −5 mA; note 1 − −950 mV Cc collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 4 dB ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA − 65 ns Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time td delay time − 35 ns tr rise time − 35 ns toff turn-off time − 300 ns ts storage time − 225 ns tf fall time − 75 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 1997 May 28 4 Philips Semiconductors Product specification PNP switching transistor BSR18A MGD835 160 handbook, full pagewidth hFE 120 80 40 0 −10−2 −10−1 −1 −10 −102 VCE = −1 V. Fig.2 DC current gain; typical value. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V. Oscilloscope input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1997 May 28 5 oscilloscope IC (mA) −103 Philips Semiconductors Product specification PNP switching transistor BSR18A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1997 May 28 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification PNP switching transistor BSR18A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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