Diode Semiconductor Korea BYW72(Z)---BYW76(Z) VOLTAGE RANGE: 200 --- 600 V CURRENT: 3.0 A FAST RECOVERY RECTIFIERS FEATURES Low cost DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYW72 BYW73 BYW74 BYW75 BYW76 UNITS Maximum recurrent peak reverse voltage VRRM 200 300 400 500 600 V Maximum RMS voltage VRMS 140 210 280 350 420 V Maximum DC blocking voltage VDC 200 300 400 500 600 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 3.0 A IFSM 200.0 A VF 1.1 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 IR 10.0 100.0 A Maximum reverse recovery time (Note1) t rr 200 ns Typical junction capacitance (Note2) CJ 32 pF Typical thermal resistance (Note3) Rθ JA 22 TJ - 55---- +150 TSTG - 55---- +150 Operating junction temperature range Storage temperature range /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BYW72(Z)---BYW76(Z) FIG.2 --TYPICAL FORWARD CHARACTERISTIC FIG.1 --MAX,THERMAL RESISTANCE VS.LEAD LENGTH 30 20 10 TL=CONSTANT 0 0 5 10 15 20 25 100 INSTANTANEOUS FORWARD CURRENT AMPERES THERM.RESIST.JUNCTION AMBIENT(K / W) 40 30 10 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.01 0.6 LEAD LENGTH(mm) Single Phase Half Wave 60H Z Resistive or Inductive Load 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT AMPERES 2 25 1.2 1.4 1.6 1.8 2.0 200 T J =125 8.3ms Single Half Sine-Wave 150 100 50 0 1 AMBIENT TEMPERATURE, 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz FIG.5-- MAX.REVERSE POWER DISSIPATION VS. JUNCTION TEMPERATURE FIG.6--TYPICAL JUNCTION CAPACITANCE 100 300 VR=VRRM 250 200 150 PR-LIMIT @100%VR 100 50 PR-LIMIT @80%VR 0 25 50 75 100 JUNCTION TEMPERATURE, 125 JUNCTION CAPACITANCE,pF REVERSE POWER DISSIPATION(MW) 1.0 FIG.4--PEAK FORWARD SURGE CURRENT 3 0 0.8 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.3 --FORWARD DERATING CURVE 1 TJ =25 Pulse Width=300µ S 0.02 60 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 150 REVERSE VOLTAGE,VOLTS www.diode.kr Diode Semiconductor Korea BYW72(Z)---BYW76(Z) THERMAL RESISTANCE FOR PULSE CLND (K/W) FIG.8 --THERMAL RESPONSE 1000 VRRM =600V RTHJA =70K/W 100 Tａｍｂ=25 tP /T=0.5 Tａｍｂ=４５ tP /T=0.2 Tａｍｂ=６０ 10 tP /T=0.1 Tamb=70 tP /T=0.02 Tamb=１００ tP /T=0.01 1 10 -4 10 -3 10 -2 -1 10 0 10 1 10 2 10 10 0 10 1 2 10 PULSE LENGTH (S) www.diode.kr