DSK BYW72 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
BYW72(Z)---BYW76(Z)
VOLTAGE RANGE: 200 --- 600 V
CURRENT: 3.0 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYW72
BYW73
BYW74
BYW75
BYW76
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
300
400
500
600
V
Maximum RMS voltage
VRMS
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
200
300
400
500
600
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
3.0
A
IFSM
200.0
A
VF
1.1
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
IR
10.0
100.0
A
Maximum reverse recovery time (Note1)
t rr
200
ns
Typical junction capacitance
(Note2)
CJ
32
pF
Typical thermal resistance
(Note3)
Rθ JA
22
TJ
- 55---- +150
TSTG
- 55---- +150
Operating junction temperature range
Storage temperature range
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BYW72(Z)---BYW76(Z)
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
FIG.1 --MAX,THERMAL RESISTANCE VS.LEAD LENGTH
30
20
10
TL=CONSTANT
0
0
5
10
15
20
25
100
INSTANTANEOUS FORWARD
CURRENT AMPERES
THERM.RESIST.JUNCTION
AMBIENT(K / W)
40
30
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.01
0.6
LEAD LENGTH(mm)
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
50
75
100
125
150
175
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT AMPERES
2
25
1.2
1.4
1.6
1.8
2.0
200
T J =125
8.3ms Single Half
Sine-Wave
150
100
50
0
1
AMBIENT TEMPERATURE,
2
4
8 10
20
40
60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.5-- MAX.REVERSE POWER DISSIPATION
VS. JUNCTION TEMPERATURE
FIG.6--TYPICAL JUNCTION CAPACITANCE
100
300
VR=VRRM
250
200
150
PR-LIMIT
@100%VR
100
50
PR-LIMIT
@80%VR
0
25
50
75
100
JUNCTION TEMPERATURE,
125
JUNCTION CAPACITANCE,pF
REVERSE POWER DISSIPATION(MW)
1.0
FIG.4--PEAK FORWARD SURGE CURRENT
3
0
0.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.3 --FORWARD DERATING CURVE
1
TJ =25
Pulse Width=300µ S
0.02
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
150
REVERSE VOLTAGE,VOLTS
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Diode Semiconductor Korea
BYW72(Z)---BYW76(Z)
THERMAL RESISTANCE FOR PULSE CLND (K/W)
FIG.8 --THERMAL RESPONSE
1000
VRRM =600V
RTHJA =70K/W
100
Tamb=25
tP /T=0.5
Tamb=45
tP /T=0.2
Tamb=60
10
tP /T=0.1
Tamb=70
tP /T=0.02
Tamb=100
tP /T=0.01
1
10
-4
10
-3
10
-2
-1
10
0
10
1
10
2
10
10
0
10
1
2
10
PULSE LENGTH (S)
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