100mA / 50V Digital transistor (with built-in resistor) DTC125TUA / DTC125TKA Dimensions (Unit : mm) DTC125TUA 0.9 0.2 0.3 0.7 (3) 1.25 (1) (2) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 Abbreviated symbol : 0A DTC125TKA Structure NPN epitaxial planar silicon transistor (Resistor built-in type) 2.9 0.1Min. Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making the device design easy. 4) Higher mounting densities can be achieved. 2.0 2.1 Applications Inverter, Interface, Driver (1) Emitter (2) Base (3) Collector Each lead has same dimensions 1.1 0.4 0.8 1.6 2.8 (3) Package Packaging type Part No. Code Basic ordering unit (pieces) DTC125TUA DTC125TKA (2) UMT3 Taping T106 3000 (1) 0.95 0.95 SMT3 Taping T146 3000 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 Abbreviated symbol : 0A 0.3Min. Packaging specifications (1) Emitter (2) Base (3) Collector Each lead has same dimensions − − Inner circuit C B R1 E E : Emitter C : Collector B : Base R1=200kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTC125TUA / DTC125TKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Symbol Limits Unit VCBO VCEO VEBO IC 50 50 5 100 V V V mA Pc Tj Tstg 200 150 −55 to +150 mW °C Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature °C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol Min. Typ. Max. Unit BVCBO BVCEO − − − − V V IC=50μA IC=1mA BVEBO 50 50 5 − − V μA IE=50μA ICBO IEBO − VEB=4V VCE(sat) − 100 μA V − DC current transfer ratio hFE Input resistance R1 fT ∗ Transition frequency ∗ Characteristics of built-in transistor − − 140 − − − 250 0.5 0.5 0.3 600 200 250 260 − kΩ MHz Conditions VCB=50V IC=0.5mA , IB=0.05mA IC=1mA , VCE=5V − VCE=10V , IE= −5mA , f=100MHz 1k VCE=5V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristic curves Ta=100°C DC CURRENT GAIN : hFE 500 200 Ta= −40°C Ta=25°C 100 50 20 10 5 2 1 10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 IC/IB=10/1 500m 200m 100m Ta=100°C Ta=25°C 50m 20m Ta= −40°C 10m 5m 2m 1m 10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/2 2009.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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