PHILIPS BUT11APX-1200 Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
GENERAL DESCRIPTION
Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
VBE = 0 V
0.15
15.5
170
1200
1200
550
6
10
32
1.0
300
V
V
V
A
A
W
V
PINNING - SOT186A
PIN
Ths ≤ 25 ˚C
IC = 2 A; IB = 0.4 A
IC = 3 A; VCE = 5 V
IC = 2.5 A; IB1 = 0.5 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
case
1
base
2
collector
3
emitter
ns
b
case isolated
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1200
550
1200
6
10
3
5
32
150
150
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
3.95
K/W
55
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
April 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
550
-
0.1
-
mA
V
13
20
13
-
0.15
0.91
25
30
18.5
15.5
1.0
1.5
47
25
-
V
V
TYP.
MAX.
UNIT
-
0.5
3
0.3
µs
µs
µs
170
1.5
300
µs
ns
-
1.8
300
µs
ns
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
1
ICES
ICES
Collector cut-off current
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
hFEsat
hFEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA;
L = 25 mH
IC = 2.0 A; IB = 0.4 A
IC = 2.0 A; IB = 0.4 A
IC = 1 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V
IC = 2 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified8
SYMBOL
ton
ts
tf
PARAMETER
CONDITIONS
Switching times (resistive load)
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ts
tf
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ts
tf
Turn-off storage time
Turn-off fall time
ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH;
-VBB = 5 V
ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
1 Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
ICsat
90 %
+ 50v
100-200R
90 %
IC
10 %
ts
Horizontal
ton
tf
toff
Oscilloscope
IB1
IB
Vertical
10 %
300R
1R
tr
30ns
6V
30-60 Hz
-IB2
Fig.4. Switching times waveforms with resistive load.
Fig.1. Test circuit for VCEOsust.
VCC
IC / mA
LC
250
200
IBon
LB
100
T.U.T.
-VBB
0
min
VCE / V
VCEOsust
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
Fig.2. Oscilloscope display for VCEOsust.
ICsat
VCC
90 %
IC
RL
10 %
VIM
RB
0
tf
T.U.T.
t
ts
IB
IB1
tp
t
T
- IB2
Fig.6. Switching times waveforms with inductive load.
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
April 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
120
BUT11APX-1200
Normalised Power Derating
PD%
VBEsat/V
110
1.4
100
1.2
90
80
1.0
70
0.8
60
50
0.6
40
30
0.4
20
0.2
10
0
0
20
40
60
80
100
Tmb / C
120
0.0
140
0.1
1
IC/A
10
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
h FE
VCEsat/V
100
0.5
5V
0.4
0.3
10
0.2
Tj = 25 C
1V
0.1
0.0
1
0.01
0.1
1
10
0.1
1
IC / A
10
IC/A
Fig.8. Typical DC current gain. hFE = f(IC)
parameter VCE
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.8
Zth / (K/W)
BU1706AX
10
VCEsat/V
2.0
0.5
1.6
IC=1A
2A
3A
1
0.2
0.1
0.05
0.1
0.02
4A
1.2
0.8
PD
tp
D=
tp
T
0.01
0.4
0.0
0.01
D=0
0.001
0.10
1.00
1u
10.00
IB/A
10u 100u 1m 10m 100m
t/s
1
10
100
Fig.12. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
April 1999
t
T
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
IC (A)
VCC
11
10
9
8
7
LC
6
VCL(RBSOAR)
5
IBon
4
PROBE POINT
LB
3
2
-VBB
T.U.T.
1
0
0
200
400
600
800
1,000
1,200
1,400
VCEclamp (V)
Fig.13. Reverse bias safe operating area. Tj ≤ Tj max
April 1999
Fig.14. Test circuit for reverse bias safe operating
area.
Vcl ≤ 1200V; Vcc = 150V; VBB = -5V; LB = 1µH;Lc =
200µH
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
max.
19
max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.15. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
April 1999
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1999
7
Rev 1.000
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