ams AS3635 Xenon flash driver with 5v igbt control Datasheet

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Datasheet
AS3635
Xenon Flash Driver with 5V IGBT Control
1 General Description
2 Key Features
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Build in 5V charge-pump for IGBT gate drive
The AS3635 is a highly integrated photoflash charger
with build in IGBT driver.
Photoflash voltage accuracy programmable to ±3%
(in circuit One Time Programmable - OTP)
A build in 5V charge-pump guaranties constant IGBT
drive at any battery voltage. The build in timer turns off
the charge-pump 20 seconds after charging.
Trip voltage accuracy ±1.5%
PCB: No microvias need
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Small Size 1.5mm x 1.5mm x 0.6mm
In circuit fuse trimming allows to set the voltage on the
photoflash capacitor to ±3% accuracy.
Average input current < 320mA
Few external components
- No Schottky-Diode needed
- No output voltage divider needed
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The AS3635 is available in a space-saving WL-CSP
package measuring only 1.5mm x 1.5mm and operates
over the -30ºC to +85ºC temperature range.
Reliable Flash on/off for IGBT timing.
Charge time < 4sec @ Vbat>2.7V, CFLASH =22µF
Charge complete indicator
Undervoltage lockout
Available in a tiny WL-CSP Package
3x3 balls 0.5mm pitch, 1.5x1.5mm package size
Warning: Lethal voltages are present on applications
using AS3635! Do not operate without training to handle high voltages.
3 Applications
Figure 1. Typical Operating Circuit
Xenon Flash driver for mobile phones, PDA and DSC
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1.4-8
1 - 20
AS3635
Datasheet - P i n o u t
4 Pinout
Pin Assignment
Figure 2. Pin Assignments (Top Through View)
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AS3635
Pin Description
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Table 1. Pin Description for AS3635
Pin Number
Pin Name
A1
SW
A2
VBAT
A3
V5V
CHARGE
B2
PGND
C2
FLASH
GND
DONE
Positive supply voltage input
5V charge pump output
Digital input pin, active high - enables charging of photoflash capacitor
Power ground - connect to ground (GND)
IGBT gate control - internally level shifted to 5V (from pin V5V)
Digital input pin, active high - Enables flash (level shifted to IGBT_GATE)
Signal ground - connect to ground (GND)
Digital open drain output, active low - indicates end of charging
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IGBT_GATE
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B3
C1
Xenon DCDC converter switching node
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B1
Description
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AS3635
Datasheet - A b s o l u t e M a x i m u m R a t i n g s
5 Absolute Maximum Ratings
Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in Table 3, “Electrical
Characteristics,” on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Table 2. Absolute Maximum Ratings
Units
VBAT, V5V to GND
-0.3
+7.0
V
CHARGE, DONE, FLASH to GND
-0.3
VBAT +
0.3
V
IGBT_GATE to GND
-0.3
V5V +
0.3
V
SW to PGND
-0.3
+55.0
V
PGND to GND
0.0
0.0
V
Comments
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Max
maximum 7.0V
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Min
Connect PGND to GND directly below
the pad (short connection
recommended)
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Parameter
+100
+IIN
mA
Norm: EIA/JESD78
0.76
W
PT
±15000
V
Air Discharge to module;
IEC 61000 -4 -2 test bench
±8000
V
Contact Test to module;
IEC 61000 -4 -2 test bench
ESD HBM pins SW, IGBT_GATE, PGND, V5V
±2000
V
Norm: MIL 883 E Method 3015
ESD CDM
±500
V
Norm: JEDEC JESD 22-C101C
ESD MM
±100
V
Norm: JEDEC JESD 22-A115-A level A
Input Pin Current without causing latchup
-100
Continuous Power Dissipation (TA = +70ºC)
Continuous power dissipation
1
Electrostatic Discharge
2
ESD pins VBAT, CHARGE, DONE, FLASH
Temperature Ranges and Storage Conditions
Storage Temperature Range
-55
+125
ºC
Humidity
5
85
%
Non condensing
+260
ºC
according to IPC/JEDEC J-STD-020
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Body Temperature during Soldering
Moisture Sensitivity Level (MSL)
Represents a max. floor life time of
unlimited
MSL 1
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1. Depending on actual PCB layout and PCB used
2. Assembled on PCB board (requires capacitor CVBAT); special PCB layout (spark gaps) and external resistors
required; system test for completed module (fully capsuled), no permanent interruption of operation
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AS3635
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
VVBAT = +2.51V to +5.5V, TAMB = -30ºC to +85ºC, unless otherwise specified. Typical values are at VVBAT = +3.6V,
TAMB = +25ºC, unless otherwise specified.
Table 3. Electrical Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
1
VVBAT
Supply Voltage
2.51
3.6
TAMB
Operating
Temperature
-30
25
ISHUTDOWN
Shutdown Current
CHARGE = 0, charge pump OFF, FLASH = 0
TAMB<50ºC; VVBAT<3.7V
VUVLO
Undervoltage Lockout
Measured on pin VBAT
2.3
V
85
ºC
1.0
µA
2.5
V
32.9
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V
35.8
V
50
V
1.05
A
VFLASH Capacitor Charger
VTRIP
Comparator trip
voltage
V(SW) - V(VBAT) in circuit adjustable with
OTP. TAMB = 0°C to 50°C; only if VTRIP is
trimmed by austriamicrosystems
31.9
VTRIPRANGE
Programming range of
VTRIP
5 bit programming 32.4V -11.2%/+10.5%;
measured on pin SW
Allows in-circuit trimming of the final charged
voltage VFLASH on capacitor CFLASH
29.6
VSW
Maximum voltage on
pin SW
ISW
Switching current limit
RSW
Switch on resistance
tEOC_DET
5.5
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0.5
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General Operating Conditions
0.75
Internal transistor between SW and PGND
32.4
0.9
0.4
end of charge comparator trigger time - see
Internal Circuit on page 8
128
138
148
5.25 > VVBAT > 2.7V
4.75
5.0
5.25
2.7V > VVBAT > 2.51V
4.3
Ω
ns
Charge Pump Parameters
5V Charge pump
output voltage
ICHRG_PUMP
Charge Pump
Operating Current
fCLK
Operating frequency
CHARGE= 0->1->0 (20 seconds timer
2
running ), charge pump ON
includes 48µA for internal biasing and oscillator
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VV5V
5.25
V
163
µA
2.0
MHz
IGBT Control - See IGBT Driver on page 13
IGBT control voltage
fall time
RIGBT_ON
IGBT switching on
resistance
TAMB=-30ºC to 85ºC
IIGBT_SINK
IGBT Sink Current
VIGBT_GATE below 2.3V;
TAMB=-30ºC to 85ºC
IIGBT_BOOST
IGBT Boost Current
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0.171
0.214 0.256
µs
0.42
0.525
0.63
µs
AS3635B
30
50
60
Ω
AS3635E
5
15
20
Ω
AS3635B
10
15
20
mA
AS3635E
52
60
70
mA
40
46
53
mA
Pin IGBT_GATE, rise/falltime 10% - 90%,
V5V=5V, TAMB=25ºC, VIN=3.7V, AS3635E,
load: 6.5nF (capacitor)
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IBGTFALL
IGBT control voltage
rise time
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IBGTRISE
VIGBT_GATE above 2.3V; TAMB=-30ºC to 85ºC
Digital Interface
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AS3635
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
Table 3. Electrical Characteristics (Continued)
Parameter
Condition
Min
VIH
High Level Input
Voltage
Pins CHARGE, FLASH;
1.26
VIL
Low Level Input
Voltage
pin DONE in trimmode
0.0
VOL
Low Level Output
Voltage
Pin DONE, ILOAD=4mA
ILEAK
Leakage current
Pin DONE
RPD
Pulldown resistance to
3
GND
Pins CHARGE, FLASH
Typ
Max
Unit
V
-1
52
0.54
V
0.2
V
+1
µA
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Symbol
kΩ
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Recommended Transformer parameters - see Table 4, “Recommended Transformers,” on page 15
LPRIMARY
Primary Inductance
LLEAK
Primary Leakage
Inductance
N
Turns Ratio
VISOLATION
Isolation Voltage
500
V
ISATURATION
Primary Saturation
Current
0.84
A
RPRIMARY
Primary Winding
Resistance
0.4
Ω
RSECUNDAR
Secondary Winding
Resistance
60
Ω
µH
0.4
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for VFLASH=320V (final charged
voltage on CFLASH)
µH
10.2
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1. Minimum VVBAT is set to 2.51V to allow a little margin to maximum VUVLO undervoltage lockout of 2.5V.
2. Setting CHARGE=1 resets the timeout timer. Additionally the timeout timer is automatically stopped at power
on reset and once it has expired.
3. Measured with VBAT=3.7V, CHARGE or FLASH = 1.26V
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AS3635
Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
7 Typical Operating Characteristics
VBAT = 3.6V, TA = +25ºC (unless otherwise specified). CFLASH=22µF, TCHARGE Transformer = TTRN-3822,
QIGBT=RJP4002ANS, ISW=750mA.
Figure 3. Charging Waveform
Figure 4. Charging Time vs. VBAT
4.0
3.4
3.2
3.0
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50mA/
Charging Time (s)
50V/Div
3.6
VFLASH
2.8
2.6
2.4
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IBAT
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3.8
VFLASH drop due to
load of measurement
2.2
2.0
2.4
500ms/Div
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70
Efficiency (%)
60
Note: Efficiency is mostly defined
by external components used
and transformer TTRN-3822 is
optimized for size
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Efficiency (%)
50V/Div
VFLASH
IBAT
80
50
30
50mA/
50V/Div
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50mA/
VFLASH
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Figure 8. Efficiency vs. Charging Time
60
40
4.0
500ms/Div
Figure 7. Efficiency vs. VFLASH
70
3.6
Figure 6. Charging Waveform VBAT=4.2V
500ms/Div
80
3.2
VBAT (V)
Figure 5. Charging Waveform VBAT=2.51V
IBAT
2.8
20
40
30
20
VBAT=3.6V
VBAT=2.7V
VBAT=4.2V
10
50
VBAT=3.6V
VBAT=2.7V
VBAT=4.2V
10
0
0
0
50
100
150
200
250
300
350
0.0
Voltage on CFLASH (V)
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0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Charging Time (s)
1.4-8
6 - 20
AS3635
Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
Figure 9. End of charge Voltage vs. VBAT
Figure 10. IGBT_GATE driving waveform
327
FLASH
Tamb = -25C
Tamb = +85C
Tamb = +25C
325
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
1µs/Div
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VBAT (V)
Figure 11. SW switching waveform
Figure 12. SW switching waveform
VSW
VSW
Transformer:
TTRN-3825
10V/Div
Transformer:
TTRN-3822
50ns/Div
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50ns/Div
Figure 13. V5V vs. VBAT (V5V CP on)
Figure 14. Battery current vs. VBAT (V5V CP on)
300
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5.1
Battery Current IBAT (uA)
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5.0
4.9
IV5V = 10uA
IV5V = no load
4.8
2.5
3.0
10V/Div
2.5
V5V (V)
1V/Div
326
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IGBT_GATE
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End of Charge Voltage (V)
328
3.5
4.0
4.5
250
200
150
100
50
IV5V = 10uA
IV5V = no load
0
2.5
Input Voltage (V)
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3.0
3.5
4.0
4.5
Input Voltage (V)
1.4-8
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AS3635
Datasheet - D e t a i l e d D e s c r i p t i o n
8 Detailed Description
The AS3635 is a photoflash capacitor charger and an integrated IGBT driver for a Xenon flash. The capacitor charger
charges VFLASH to the final charging voltage (e.g. 320V) and the IGBT driver starts the actual Xenon flash.
Additionally a charge pump is included to generate a stable 5V supply for accurate control of the IGBT on/off timings
independent of the battery supply.
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The final charged voltage (VFLASH) can be in-field trimmed to e.g. 320V with the integrated OTP (one time programmable) memory (see section Trimming Procedure on page 12). VFLASH can be exactly trimmed to the maximum allowed
output voltage resulting in an improved use of the available energy in the photoflash capacitor.
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Note: The AS3635 uses a WL-CSP (wafer level chip scale package) to optimize the PCB area required and minimize
the module size. Therefore the actual DIE is visible (and it is not molded in plastic as for other packages like
QFN or DFN) and the AS3635 is sensitive to external light. It has to be protected from direct light from the
Xenon tube.
Internal Circuit
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Figure 15. Internal circuit
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AS3635 Operation
The AS3635 allows charging and refresh cycles under complete software control. Two typical configurations are
shown in Figure 16 and Figure 17:
Figure 16 shows a configuration without any refresh between the pre-flash and the actual flash. Typically this is used
for applications where no noise at all should be generated on the battery when the camera is performing e.g. white
color balancing (between pre-flash and flash cycle).
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1.4-8
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AS3635
Datasheet - D e t a i l e d D e s c r i p t i o n
Figure 16. AS3635 Charging Cycle without recharging between Pre-Flash and Flash
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1.4-8
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AS3635
Datasheet - D e t a i l e d D e s c r i p t i o n
Figure 17 shows a configuration with continuous refresh of the voltage on the photoflash capacitor (VFLASH). Typically
this is used in application where the maximum flash energy should be used.
Figure 17. AS3635 Charging Cycle with continuous recharging
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1.4-8
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AS3635
Datasheet - D e t a i l e d D e s c r i p t i o n
A typical charging cycle and its voltages and current on the different pins and signals are shown in Figure 18:
Figure 18. AS3635 Charging Cycle Details
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The input CHARGE is set to high and charging begins (1).
During a single cycle, the internal NMOS transistor connects the pin SW to PGND (2). Therefore the current ISW rises
(3) until it reaches ISW current limit (4). Then the energy is transferred to the secondary side of the transformer and the
voltage VCFLASH on the flash capacitor CFLASH rises (5).
The output voltage VCFLASH gradually increases and once it hits the end of charge detection threshold (6) (detected on
1
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VSW during the off time of the NMOS transistor between SW and PGND) 8 times (7) , DONE is pulled low (8). When
CHARGE is set to low afterwards (9), DONE returns to high (10) finishing a full charging cycle.
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Note: For simplicity the number of actual charging cycles (NMOS SW on/off) are reduced in Figure 18.
1. The 8 cycles required for actual detection of the end of charge conditions are not shown in Figure 18.
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AS3635
Datasheet - D e t a i l e d D e s c r i p t i o n
Trimming Procedure
The final charging voltage on VFLASH can be trimmed in-circuit to cancel inaccuracies of VFLASH due to the transformer
and diode. The trimming procedure is performed as follows:
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Figure 19. AS3635 trimming circuit
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The production test equipment starts a charging cycle (CHARGE=1) and waits until DONE=0
The voltage on VFLASH is measured and a correction code is calculated
The trimmode control is unlocked using a special sequence
The one time programmable memory (OTP) is programmed with the above calculated code
The trimmode control can be disabled by fusing the OTP bit trimm_lock
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See austriamicrosystems application note ‘AN3635_In-Production_Trimming’ for a detailed description of the trimming
setup and the trimming procedure.
2. The internal voltages (e.g. +3.4V/-2.8V/32.4V) are internally scaled to fit in the supply voltage range
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1.4-8
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AS3635
Datasheet - D e t a i l e d D e s c r i p t i o n
IGBT Driver
The internal circuit of the IGBT driver is shown in Figure 20:
Figure 20. IGBT Driver circuit
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The IGBT driver is enable once the charge pump is switched on and the voltage on pin V5V has reached 4V (to guarantee at least 4V driving signal for the IGBT).
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The IGBT driver includes all required resistors and pulldowns to operate the IGBT without any external circuitry . Do
not add any external pulldown resistor on pin IGBT_GATE.
3. Exception: If the Sanyo IGBT TIG058E8 is used, add a series resistor of 50Ω for the gate drive. For Renesas RJP4006AGE add a series resistor of 68Ω.
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1.4-8
13 - 20
AS3635
Datasheet - D e t a i l e d D e s c r i p t i o n
ESD Protection Diodes
4
The internal ESD diodes are shown in Figure 21 - do not operate ESD diodes in forward direction :
Figure 21. ESD Diodes
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4. Exception: The diode between SW and PGND is designed to be operated in forward direction for very
short pulses during charging.
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1.4-8
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AS3635
Datasheet - A p p l i c a t i o n I n f o r m a t i o n
9 Application Information
External Components
Transformers TCHARGE and TTRIG
Table 4. Recommended Transformers
TTRIG
N
L
Size (mm)
Manufacturer
C3-T2.5R
10.2
6.7µH
3.4x3.4x2.5
Mitsumi Electric
www.mitsumi.co.jp
TTRN-3825H
10.2
7µH
3.8x3.8x2.5
TTRN-3822H
10.2
7µH
3.8x3.8x2.2
TTRN-5820H
10.2
8.87µH
5.8x5.8x2.0
TTRN-0520H
10.41
8.35µH
5.0x5.0x2.0
LDT4520T-01
10.2
10µH
4.7x4.5x2.0
ATB322515
10.2
7µH
3.2x2.5x1.55
(H is max)
Tokyo Coil
www.tokyo-coil.co.jp
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TCHARGE
Part Number
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Component
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Following transformers are recommend for the AS3635 (due to the OTP programming features see section Trimming
Procedure on page 12, the output voltage VFLASH can be programmed):
BO-02
7.3x2.5(3.5)x2.2
TDK
www.tdk.com
Tokyo Coil
www.tokyo-coil.co.jp
Always check if the voltage on the pin SW does never exceed the AS3635 maximum VSW (see Table 3 on page 4)
specification during charging.
IGBT
As the AS3635 has an internal charge pump included, 2.5V, 2.7V and 4V IGBT can be used without limit on the supply
VVBAT. The IGBT is used for two purposes:
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1. Powering of the Xenon tube and generating together with the oscillation circuit consisting of TTRIG, CTRIG,
RTRIG a sufficiently high trigger pulse to ignite the Xenon tube (about 3.5kV) - this is accomplished by a fast rising edge of the gate of the IGBT
2. Switching off the current through the Xenon tube at the end of the flash pulse to accurately control the light
emitted by the flash. To protect the IGBT the switching off falling edge voltage should be less than 400V/µs
(measured on the emitter of the IGBT)
Both requirements are achieved with the internal driving circuit of the AS3635. Internal OTP trimming allows to adopt
to different trigger coils and IGBTs.
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Table 5. Recommended IGBTs
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Component
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QIGBT
Part Number
min. Drive Voltage
Size
RJP4002ANS
2.5V
RJP4003ANS
4.0V
VSON-8
3 x 4.8mm
Manufacturer
Renesas
www.renesas.com
2.7V
2.85x3.05x1.1
mm (H is max.)
GT8G133
4.0V
TSSOP-8
3.3 x 6.4mm
Toshiba
www.semicon.toshiba.co.jp
2
4.0V
ECH8
2.8 x 2.9mm
Sanyo
www.sanyo.com
1
RJP4006AGE
TIG058E8
1. Add a series resistor of 68Ω in the gate drive.
2. Add a series resistor of 47Ω in the gate drive.
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AS3635
Datasheet - A p p l i c a t i o n I n f o r m a t i o n
Photoflash Capacitor CFLASH
The photoflash capacitor stores the energy for the flash. Its capacitance define the maximum available energy. Using
higher value capacitors as shown in Table 6 is possible, but will increase the charging time.
It is recommended to use low ESR capacitors to avoid loosing power during flash (it is also possible to connect two
capacitors in parallel to reduce ESR):
Table 6. Recommended Photoflash Capacitors
Part Number
Capacitor
CFLASH
330FW13A6.3X20
2x13.5µF
1
Voltage
rating
Size
Manufacturer
330V
Cylinder
2 x l=24mm,
d=7mm
Rubycon
www.rubycon.co.jp
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1. Different capacitor values are possible to be used together with the AS3635. Lower capacitor value will reduce
charging time, lower ESR capacitor will improve light output energy and reduce losses in the capacitor during
the flash pulse.
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Photoflash Charger rectification diode DCHARGE
5
The rectification diode should have very low parasitic capacitance and has to withstand the operating current and
reverse voltages.
Table 7. Recommended Rectification Diodes
Component
DCHARGE
Part Number
Parasitic
Capacitor
Voltage
rating
Size
Manufacturer
FVO2R80
5pF
800V
1.25x2.5mm
Origin
www.origin.co.jp
GSD2004S
5pF / 2
2x240V
SOT-23
2.4x3.0mm
Vishay
www.vishay.com
BAS21
5pF / 2
2x250V
SC-70
2.0x2.1mm
OnSemi
www.onsemi.com
Supply Capacitor CVBAT and charge pump capacitor CV5V
Low ESR capacitors should be used to minimize VBAT ripple. Multi-layer ceramic capacitors are recommended since
they have extremely low ESR and are available in small footprints. The capacitor should be located as close to the
device as possible.
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X5R dielectric material is recommended due to their ability to maintain capacitance over wide voltage and temperature
range.
Table 8. Recommended CVBAT and CV5V Capacitor
C
TC Code
Rated
Voltage
Size
GRM155R60J474
470nF
X5R
6.3V
0402
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Part Number
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Component
GRM155R60J105
GRM155R61A105
1µF
X5R
6.3V
10V
0402
CVBAT
GRM188R60J475
4.7µF
X5R
6.3V
0603
Murata
www.murata.com
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CV5V
Manufacturer
If a different output capacitor is chosen, ensure low ESR values and voltage ratings.
5. A low parasitic capacitance improves charging efficiency.
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AS3635
Datasheet - A p p l i c a t i o n I n f o r m a t i o n
PCB Layout Guideline
Following layout recommendations apply:
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1. Keep the path (and area) of GND - CVBAT - VBAT - TCHARGE(primary) - SW - GND as short as possible to minimize the leakage inductance of TCHARGE and ensure a proper supply connection for the AS3635
2. Place CVBAT as close as possible to the AS3635.
3. Ensure wide and short PCB paths for the path GND - CFLASH - XFLASH - QIGBT - GND to allow 150A to flow during the flash pulse. Connect this GND only at a single place to the main GND plane.
4. The IGBT has two ground connections: One ground for the driving input and one ground for the power path.
5. Ensure larger spacings for all high voltage paths; check with the PCB manufacturer to ensure proper minimum
spacing for 320V paths and 4kV (Xenon tube trigger pin) paths.
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See austriamicrosystems demoboard layout (described in application note ‘AN3635’).
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6. Minimize the parasitic capacitance of the PCB on the anode of DCHARGE especially to GND and VFLASH
7. See austriamicrosystems “WLP-CSP-Handling-Guidelines_1V0.pdf” for proper handling, PCB layout and soldering of the WL-CSP AS3635 device.
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AS3635
Datasheet - P a c k a g e D r a w i n g s a n d M a r k i n g s
10 Package Drawings and Markings
Figure 22. 9 pin WL-CSP 1.5x1.5mm Marking
3635
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Note:
austriamicrosystems logo
3635 and version code (e.g. ‘A’ or ‘B’)
<Code>
Encoded Datecode (4 characters)
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Figure 23. 9 pin WL-CSP
1.5x1.5mm
Package Dimensions
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AS3635
Datasheet - O r d e r i n g I n f o r m a t i o n
11 Ordering Information
The devices are available as the standard products shown in Table 9.
Table 9. Ordering Information
Order Code
Marking
Description
Delivery Form
Package
Tape & Reel
9-pin WL-CSP
(1.5mm x 1.5mm)
RoHS compliant /
Green / Pb-Free
AS3635BZWLT
3635B
ISW (charging current peak) = 900mA
RIGBT_ON = 50Ω
IIGBT_SINK = 15mA
IIGBT_BOOST = 46mA
VTRIP trimmed by customer
AS3635EZWLT
Tape & Reel
9-pin WL-CSP
(1.5mm x 1.5mm)
RoHS compliant /
Green / Pb-Free
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3635E
ISW (charging current peak) = 900mA
RIGBT_ON = 15Ω
IIGBT_SINK = 60mA
IIGBT_BOOST = 46mA
VTRIP trimmed by customer
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Xenon Flash Driver with 5V IGBT Control
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Xenon Flash Driver with 5V IGBT Control
Note: All products are RoHS compliant and austriamicrosystems green.
Buy our products or get free samples online at ICdirect: http://www.austriamicrosystems.com/ICdirect
Technical support is found at http://www.austriamicrosystems.com/Technical-Support
For further information and requests, please contact us mailto:[email protected]
or find your local distributor at http://www.austriamicrosystems.com/distributor
Note: AS3635-ZWLT
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AS3635B, E Version Code - see Table 9 - ‘Description’
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Temperature Range: -30ºC - 85ºC
WL Package: Wafer Level Chip Scale Package (WL-CSP) 1.5x1.5mm
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Delivery Form: Tape & Reel
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AS3635
Datasheet - O r d e r i n g I n f o r m a t i o n
Copyrights
Copyright © 1997-2011, austriamicrosystems AG, Schloss Premstaetten, 8141 Unterpremstaetten, Austria-Europe.
Trademarks Registered ®. All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of the copyright owner.
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All products and companies mentioned are trademarks or registered trademarks of their respective companies.
Disclaimer
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Devices sold by austriamicrosystems AG are covered by the warranty and patent indemnification provisions appearing
in its Term of Sale. austriamicrosystems AG makes no warranty, express, statutory, implied, or by description regarding
the information set forth herein or regarding the freedom of the described devices from patent infringement. austriamicrosystems AG reserves the right to change specifications and prices at any time and without notice. Therefore, prior
to designing this product into a system, it is necessary to check with austriamicrosystems AG for current information.
This product is intended for use in normal commercial applications. Applications requiring extended temperature
range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or lifesustaining equipment are specifically not recommended without additional processing by austriamicrosystems AG for
each application. For shipments of less than 100 parts the manufacturing flow might show deviations from the standard
production flow, such as test flow or test location.
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The information furnished here by austriamicrosystems AG is believed to be correct and accurate. However,
austriamicrosystems AG shall not be liable to recipient or any third party for any damages, including but not limited to
personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or
consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of
austriamicrosystems AG rendering of technical or other services.
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Contact Information
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Headquarters
austriamicrosystems AG
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Tobelbaderstrasse 30
Schloss Premstaetten
A-8141 Austria
Tel: +43 (0) 3136 500 0
Fax: +43 (0) 3136 525 01
For Sales Offices, Distributors and Representatives, please visit:
http://www.austriamicrosystems.com/contact
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