Micronas HAL104TQ-I Hall-effect switch ic family Datasheet

Hardware
Documentation
Data Sheet
®
HAL 1xy
Hall-Effect Switch IC Family
Edition April 8, 2009
DSH000150_001EN
HAL1xy
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Trademarks
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation, and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
2
April 8, 2009; DSH000150_001EN
Micronas
HAL1xy
DATA SHEET
Contents
Page
Section
Title
4
4
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
Introduction
Family Overview
Marking Code
Operating Junction Temperature Range
Solderability and Welding
6
6
8
8
8
9
10
2.
2.1.
2.2.
2.3.
2.4.
2.5.
2.6.
Specifications
Outline Dimensions
Positions of Sensitive Areas
Absolute Maximum Ratings
Recommended Operating Conditions
Characteristics
Magnetic Characteristics Overview
11
11
11
11
11
3.
3.1.
3.2.
3.3.
3.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-up Behavior
EMC and ESD
12
4.
Data Sheet History
Micronas
April 8, 2009; DSH000150_001EN
3
HAL1xy
DATA SHEET
Hall-Effect Switch IC Family
1.1. Family Overview
Note: The HAL1xy family has been designed for commercial and industrial applications. It is not intended to
be used in automotive or automotive-like applications.
This sensor family consists of sensors with a latching
and unipolar output behavior.
Type
Switching
Behavior
Sensitivity
see
Page
101
unipolar
low
10
102
latching
high
10
103
latching
medium
10
104
latching
low
10
106
unipolar
high
10
107
unipolar
low
10
108
unipolar
medium
10
109
unipolar
high
10
1. Introduction
The HAL1xy Hall switch family is produced in CMOS
technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a
comparator, and an open-drain output transistor. The
comparator compares the actual magnetic flux through
the Hall plate (Hall voltage) with the fixed reference
values (switching points). Accordingly, the output transistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
The HAL1xy family is available in the SMD-package
SOT89B-3 and in the leaded version TO92UA-6.
Unipolar Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded side.
Latching Sensors:
The sensors have a latching behavior and require a
magnetic north and south pole for correct functioning.
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The
output does not change if the magnetic field is
removed. For changing the output state, the opposite
magnetic field polarity must be applied.
4
April 8, 2009; DSH000150_001EN
Micronas
HAL1xy
DATA SHEET
1.2. Marking Code
Hall Sensor Package Codes
All Hall sensors have a marking on the package
surface (branded side). This marking includes the
name of the sensor and the temperature range.
HALXXXPA-T
Temperature Range: I
Package: TQ for SOT89B-3
JQ for TO92UA-6
Type
Temperature Range
Type: 1xy
I
C
HAL101
101I
101C
Example: HAL102JQ-I
HAL102
102I
102C
HAL103
103I
103C
→ Type: 102
→ Package: TO92UA-6
→ Temperature Range: TJ = −20 °C to +125 °C
HAL104
104I
104C
HAL106
106I
106C
HAL107
107I
107C
HAL108
108I
108C
HAL109
109I
109C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors.
Ordering Codes, Packaging, Handling”.
1.4. Solderability and Welding
Soldering
1.3. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
I: TJ = −20 °C to +125 °C
C: TJ = 0 °C to +85 °C
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals shall be compatible with laser and
electrical welding. Please, note that the success of the
welding process is subject to different welding parameters which will vary according to the welding technique
used. A very close control of the welding parameters is
absolutely necessary in order to reach satisfying
results. Micronas, therefore, does not give any implied
or express warranty as to the ability to weld the component.
1 VDD
3
OUT
2, 4 GND
Fig. 1–1: Pin configuration
Micronas
April 8, 2009; DSH000150_001EN
5
HAL1xy
DATA SHEET
2. Specifications
2.1. Outline Dimensions
Fig. 2–1:
SOT89B-3: Plastic Small Outline Transistor package, 4 leads, with one sensitive area
Weight approximately 0.034 g.
6
April 8, 2009; DSH000150_001EN
Micronas
HAL1xy
DATA SHEET
Fig. 2–2:
TO92UA-6: Plastic Transistor Standard UA package, 3 leads
Weight approximately 0.106 g
Micronas
April 8, 2009; DSH000150_001EN
7
HAL1xy
DATA SHEET
2.2. Positions of Sensitive Areas
SOT89B-3
TO92UA-6
y
0.95 mm nominal
1.08 mm nominal
A4
0.33 mm nominal
0.30 mm nominal
2.3. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin Name
Min.
Max.
Unit
VDD
Supply Voltage
1
−15
281)
V
VO
Output Voltage
3
−0.3
281)
V
IO
Continuous Output On Current
3
−
501)
mA
TJ
Junction Temperature Range
−40
1402)
°C
1)
2)
as long as TJmax is not exceeded
t < 1000 h
2.4. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
8
Symbol
Parameter
Pin Name
Min.
Max.
Unit
VDD
Supply Voltage
1
3.8
24
V
IO
Continuous Output on Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
April 8, 2009; DSH000150_001EN
Comment
Micronas
HAL1xy
DATA SHEET
2.5. Characteristics
at TJ = −20 °C to +125 °C, VDD = 3.8 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
−
28
32
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage over
Temperature Range
3
−
130
400
mV
IOL = 20 mA
IOH
Output Leakage Current over
Temperature Range
3
−
−
10
µA
Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24 V
fosc
Internal Oscillator Chopper
Frequency over Temperature
Range
−
−
62
−
kHz
HAL10y, HAL11y
−
140
−
kHz
HAL104
ten(O)
Enable Time of Output after
Setting of VDD
1
−
35
−
µs
tr
Output Rise Time
3
−
75
400
ns
tf
Output Fall Time
3
−
50
400
ns
VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
SOT89B Package
Thermal Resistance
Rthja
Junction to Ambient
−
−
−
212
K/W
Rthjc
Junction to Case
−
−
−
73
K/W
Measured with a 1s0p board
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 2–3)
TO92UA Package
Thermal Resistance
Measured with a 1s0p board
Rthja
Junction to Ambient
−
−
−
225
K/W
Rthjc
Junction to Case
−
−
−
63
K/W
1)
VDD = 12 V, B > BON + 2 mT or B < BOFF − 2 mT
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 2–3: Recommended footprint SOT89B-3, Dimensions in mm
All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process.
Micronas
April 8, 2009; DSH000150_001EN
9
HAL1xy
DATA SHEET
2.6. Magnetic Characteristics Overview
at TJ = −20 °C to +125 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V. Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Switching Type
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
HAL101
−20 °C
28
33
42
18
23
30
−
10.0
−
mT
unipolar
25 °C
28
34
42
18
24
30
−
10.0
−
mT
125 °C
26
32
42
17.5
22
30
−
10.0
−
mT
HAL102
−20 °C
0.5
2.8
6.5
−6.5
−2.8
−0.5
−
5.6
−
mT
latching
25 °C
0.5
2.6
6
−6
−2.6
−0.5
−
5.2
−
mT
125 °C
0.1
2.4
5.5
−5.5
−2.4
−0.1
−
4.8
−
mT
HAL103
−20 °C
5.5
8.4
12.5
−12.5
−8.6
−5.5
−
17
−
mT
latching
25 °C
5
7.6
11.5
−11.5
−7.6
−5
−
15.2
−
mT
125 °C
3.5
6.7
11.0
−11.0
−6.4
−3.5
−
13.1
−
mT
HAL104
−20 °C
10.5
15.8
21.5
−21.5
−15.8
−10.5
−
31.6
−
mT
latching
25 °C
10
14
18.5
−18.5
−14
−10
−
28
−
mT
125 °C
6.0
10
15.5
−15.5
−10
−6.0
−
20
−
mT
HAL106
−20 °C
8.8
12.5
18.0
4.5
7.0
11.0
−
5.5
−
mT
unipolar
25 °C
8.1
12.0
16.5
4.2
6.5
10.4
−
5.5
−
mT
125 °C
7.4
10.0
16.0
3.4
6.0
9.9
−
4.0
−
mT
HAL107
−20 °C
19.6
27.5
35.8
16.9
23.0
31.3
−
4.5
−
mT
unipolar
25 °C
19.6
26.5
35.0
16.9
22.5
30.6
−
4.0
−
mT
125 °C
18.4
26.0
33.6
15.8
22.0
29.4
−
4.0
−
mT
HAL108
−20 °C
13.1
17.5
25.0
11.9
15.7
23.0
−
1.8
−
mT
unipolar
25 °C
12.7
17.0
23.8
11.4
15.0
21.9
−
2.0
−
mT
125 °C
10.8
14.6
23.0
9.7
13.0
21.0
−
1.6
−
mT
HAL109
−20 °C
2.3
8.1
12.0
1.8
5.9
11.5
−
2.2
−
mT
unipolar
25 °C
2.3
7.9
12.0
1.8
5.7
11.5
−
2.2
−
mT
125 °C
2.3
7.7
12.0
1.8
5.7
11.5
−
2.0
−
mT
10
April 8, 2009; DSH000150_001EN
Micronas
HAL1xy
DATA SHEET
3. Application Notes
3.3. Start-up Behavior
3.1. Ambient Temperature
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in Section 2.5.: Characteristics on page 9.
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = I DD × V DD × R th
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic field must be above
BONmax, respectively, below BOFFmin.
3.4. EMC and ESD
If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambient
temperature.
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 3–1). The series resistor
and the capacitor should be placed as closely as
possible to the HAL sensor.
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the
application.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
RV
220 W
1
T Amax = T Jmax – ΔT
VEMC
VP
1.2 kW
OUT
3
4.7 nF
3.2. Extended Operating Conditions
RL
VDD
20 pF
2 GND
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 8).
Fig. 3–1: Test circuit for EMC investigations
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is
not tested. For special test conditions, please
contact Micronas.
Micronas
April 8, 2009; DSH000150_001EN
11
HAL1xy
DATA SHEET
4. Data Sheet History
1. Data Sheet: “HAL1xy Hall-Effect Switch IC Family”,
April 8, 2009, DSH000150_001EN. First release of
the data sheet.
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
12
April 8, 2009; DSH000150_001EN
Micronas
Similar pages