Hardware Documentation Data Sheet ® HAL 1xy Hall-Effect Switch IC Family Edition April 8, 2009 DSH000150_001EN HAL1xy DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks – HAL Micronas Trademarks Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation, and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 April 8, 2009; DSH000150_001EN Micronas HAL1xy DATA SHEET Contents Page Section Title 4 4 5 5 5 1. 1.1. 1.2. 1.3. 1.4. Introduction Family Overview Marking Code Operating Junction Temperature Range Solderability and Welding 6 6 8 8 8 9 10 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. Specifications Outline Dimensions Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Characteristics Magnetic Characteristics Overview 11 11 11 11 11 3. 3.1. 3.2. 3.3. 3.4. Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD 12 4. Data Sheet History Micronas April 8, 2009; DSH000150_001EN 3 HAL1xy DATA SHEET Hall-Effect Switch IC Family 1.1. Family Overview Note: The HAL1xy family has been designed for commercial and industrial applications. It is not intended to be used in automotive or automotive-like applications. This sensor family consists of sensors with a latching and unipolar output behavior. Type Switching Behavior Sensitivity see Page 101 unipolar low 10 102 latching high 10 103 latching medium 10 104 latching low 10 106 unipolar high 10 107 unipolar low 10 108 unipolar medium 10 109 unipolar high 10 1. Introduction The HAL1xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. The HAL1xy family is available in the SMD-package SOT89B-3 and in the leaded version TO92UA-6. Unipolar Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Latching Sensors: The sensors have a latching behavior and require a magnetic north and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. 4 April 8, 2009; DSH000150_001EN Micronas HAL1xy DATA SHEET 1.2. Marking Code Hall Sensor Package Codes All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. HALXXXPA-T Temperature Range: I Package: TQ for SOT89B-3 JQ for TO92UA-6 Type Temperature Range Type: 1xy I C HAL101 101I 101C Example: HAL102JQ-I HAL102 102I 102C HAL103 103I 103C → Type: 102 → Package: TO92UA-6 → Temperature Range: TJ = −20 °C to +125 °C HAL104 104I 104C HAL106 106I 106C HAL107 107I 107C HAL108 108I 108C HAL109 109I 109C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors. Ordering Codes, Packaging, Handling”. 1.4. Solderability and Welding Soldering 1.3. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). I: TJ = −20 °C to +125 °C C: TJ = 0 °C to +85 °C During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals shall be compatible with laser and electrical welding. Please, note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD 3 OUT 2, 4 GND Fig. 1–1: Pin configuration Micronas April 8, 2009; DSH000150_001EN 5 HAL1xy DATA SHEET 2. Specifications 2.1. Outline Dimensions Fig. 2–1: SOT89B-3: Plastic Small Outline Transistor package, 4 leads, with one sensitive area Weight approximately 0.034 g. 6 April 8, 2009; DSH000150_001EN Micronas HAL1xy DATA SHEET Fig. 2–2: TO92UA-6: Plastic Transistor Standard UA package, 3 leads Weight approximately 0.106 g Micronas April 8, 2009; DSH000150_001EN 7 HAL1xy DATA SHEET 2.2. Positions of Sensitive Areas SOT89B-3 TO92UA-6 y 0.95 mm nominal 1.08 mm nominal A4 0.33 mm nominal 0.30 mm nominal 2.3. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 −15 281) V VO Output Voltage 3 −0.3 281) V IO Continuous Output On Current 3 − 501) mA TJ Junction Temperature Range −40 1402) °C 1) 2) as long as TJmax is not exceeded t < 1000 h 2.4. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). 8 Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 3.8 24 V IO Continuous Output on Current 3 0 20 mA VO Output Voltage (output switched off) 3 0 24 V April 8, 2009; DSH000150_001EN Comment Micronas HAL1xy DATA SHEET 2.5. Characteristics at TJ = −20 °C to +125 °C, VDD = 3.8 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current over Temperature Range 1 1.6 3 5.2 mA VDDZ Overvoltage Protection at Supply 1 − 28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 20 ms VOZ Overvoltage Protection at Output 3 − 28 32 V IOH = 25 mA, TJ = 25 °C, t = 20 ms VOL Output Voltage over Temperature Range 3 − 130 400 mV IOL = 20 mA IOH Output Leakage Current over Temperature Range 3 − − 10 µA Output switched off, TJ ≤150 °C, VOH = 3.8 to 24 V fosc Internal Oscillator Chopper Frequency over Temperature Range − − 62 − kHz HAL10y, HAL11y − 140 − kHz HAL104 ten(O) Enable Time of Output after Setting of VDD 1 − 35 − µs tr Output Rise Time 3 − 75 400 ns tf Output Fall Time 3 − 50 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF SOT89B Package Thermal Resistance Rthja Junction to Ambient − − − 212 K/W Rthjc Junction to Case − − − 73 K/W Measured with a 1s0p board 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 2–3) TO92UA Package Thermal Resistance Measured with a 1s0p board Rthja Junction to Ambient − − − 225 K/W Rthjc Junction to Case − − − 63 K/W 1) VDD = 12 V, B > BON + 2 mT or B < BOFF − 2 mT 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 2–3: Recommended footprint SOT89B-3, Dimensions in mm All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process. Micronas April 8, 2009; DSH000150_001EN 9 HAL1xy DATA SHEET 2.6. Magnetic Characteristics Overview at TJ = −20 °C to +125 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V. Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type Parameter TJ On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit HAL101 −20 °C 28 33 42 18 23 30 − 10.0 − mT unipolar 25 °C 28 34 42 18 24 30 − 10.0 − mT 125 °C 26 32 42 17.5 22 30 − 10.0 − mT HAL102 −20 °C 0.5 2.8 6.5 −6.5 −2.8 −0.5 − 5.6 − mT latching 25 °C 0.5 2.6 6 −6 −2.6 −0.5 − 5.2 − mT 125 °C 0.1 2.4 5.5 −5.5 −2.4 −0.1 − 4.8 − mT HAL103 −20 °C 5.5 8.4 12.5 −12.5 −8.6 −5.5 − 17 − mT latching 25 °C 5 7.6 11.5 −11.5 −7.6 −5 − 15.2 − mT 125 °C 3.5 6.7 11.0 −11.0 −6.4 −3.5 − 13.1 − mT HAL104 −20 °C 10.5 15.8 21.5 −21.5 −15.8 −10.5 − 31.6 − mT latching 25 °C 10 14 18.5 −18.5 −14 −10 − 28 − mT 125 °C 6.0 10 15.5 −15.5 −10 −6.0 − 20 − mT HAL106 −20 °C 8.8 12.5 18.0 4.5 7.0 11.0 − 5.5 − mT unipolar 25 °C 8.1 12.0 16.5 4.2 6.5 10.4 − 5.5 − mT 125 °C 7.4 10.0 16.0 3.4 6.0 9.9 − 4.0 − mT HAL107 −20 °C 19.6 27.5 35.8 16.9 23.0 31.3 − 4.5 − mT unipolar 25 °C 19.6 26.5 35.0 16.9 22.5 30.6 − 4.0 − mT 125 °C 18.4 26.0 33.6 15.8 22.0 29.4 − 4.0 − mT HAL108 −20 °C 13.1 17.5 25.0 11.9 15.7 23.0 − 1.8 − mT unipolar 25 °C 12.7 17.0 23.8 11.4 15.0 21.9 − 2.0 − mT 125 °C 10.8 14.6 23.0 9.7 13.0 21.0 − 1.6 − mT HAL109 −20 °C 2.3 8.1 12.0 1.8 5.9 11.5 − 2.2 − mT unipolar 25 °C 2.3 7.9 12.0 1.8 5.7 11.5 − 2.2 − mT 125 °C 2.3 7.7 12.0 1.8 5.7 11.5 − 2.0 − mT 10 April 8, 2009; DSH000150_001EN Micronas HAL1xy DATA SHEET 3. Application Notes 3.3. Start-up Behavior 3.1. Ambient Temperature Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in Section 2.5.: Characteristics on page 9. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + ΔT At static conditions and continuous operation, the following equation applies: ΔT = I DD × V DD × R th During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 3.4. EMC and ESD If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambient temperature. For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 3–1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: RV 220 W 1 T Amax = T Jmax – ΔT VEMC VP 1.2 kW OUT 3 4.7 nF 3.2. Extended Operating Conditions RL VDD 20 pF 2 GND All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 8). Fig. 3–1: Test circuit for EMC investigations Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. Micronas April 8, 2009; DSH000150_001EN 11 HAL1xy DATA SHEET 4. Data Sheet History 1. Data Sheet: “HAL1xy Hall-Effect Switch IC Family”, April 8, 2009, DSH000150_001EN. First release of the data sheet. Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com 12 April 8, 2009; DSH000150_001EN Micronas