SEMICONDUCTOR E35A37VBS, E35A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=35A. Zener Voltage : 37V(Typ.) POLARITY E35A37VBS (+ Type) E35A37VBR (- Type) K H MAXIMUM RATING (Ta=25 CHARACTERISTIC ) E I SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 300 (60Hz) A Repetitive Peak Reverse Surge Current (Pulse width=10mS) IRSM 35 A Transient Peak Reverse Voltage VRSM 34 V Peak Reverse Voltage VRM 32 V Junction Temperature Tj -40 215 Tstg -40 215 DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 _ 0.04 Φ1.3 + _ 0.2 4.2+ _ 0.2 8.0 + TYP 0.5 _ 0.2 Φ10.0 + _ 0.1x45 0.4+ 8.5 MAX 0.2+0.1 _ 0.5 28.35+ J D F G B B-PF Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IFM=100A - - 1.15 V Zener Voltage VZ IZ=10mA 34 37 40 V Reverse Current IR VR=32V - - 10 A IFM=100A, IM=100mA, Pw=100mS - - 70 mV Irsm=35A, Pw=10mS - - 55 V IZ=10mA - 27 - HIR Ta=150 , VR=32V - - 100 A Rth DC total junction to case - - 0.8 /W Transient Thermal Resistance Vbr Breakdown Voltage Temperature Coefficient T Reverse Leakage Current Under High Temperature Temperature Resistance 2002. 1. 30 VF Revision No : 1 mV/ 1/1