Naina MBR20030CT Silicon schottky diode, 200a Datasheet

Naina Semiconductor Ltd.
MBR20020CT thru
MBR20040CTR
Silicon Schottky Diode, 200A
Features
•
•
•
•
Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Average forward
current
Non-repetitive
forward surge
current, half sinewave
Symbol
Conditions
MBR20020CT
(R)
MBR20030CT MBR20035CT
(R)
(R)
MBR20040CT
(R)
Units
VRRM
20
30
35
40
V
VRMS
14
21
25
28
V
VDC
20
30
35
40
V
IF(AV)
TC ≤ 135 oC
200
200
200
200
A
IFSM
TC = 25 oC
tp = 8.3 ms
1500
1500
1500
1500
A
MBR20020CT
(R)
MBR20030CT
(R)
MBR20035CT
(R)
MBR20040CT
(R)
Units
0.68
0.68
0.68
0.68
V
5
5
5
5
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
DC forward voltage
VF
DC reverse current
IR
Conditions
IF = 100 A
TJ = 25 oC
VR = 20 V
TJ = 25 oC
VR = 20 V
TJ = 125oC
mA
200
200
200
200
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Thermal resistance
junction to case
Operating, storage
temperature range
1
Symbol
MBR20020CT
(R)
MBR20030CT
(R)
MBR20035CT
(R)
MBR20040CT
(R)
RthJ-C
0.5
0.5
0.5
0.5
TJ , Tstg
- 40 to +175
- 40 to +175
- 40 to +175
- 40 to +175
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Units
o
C/W
o
C
Naina Semiconductor Ltd.
MBR20020CT thru
MBR20040CTR
Package Outline
ALL DIMENSIONS IN MM
Ordering Table
MBR
1
200
2
20
3
CT
4
1 – Device Type
> MBR = Schottky Barrier Diode Module
2 – Current Rating = IF(AV)
3 – Voltage = VRRM
4 – Polarity
> CT = Normal (Cathode to Base)
> CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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