UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. 2 1 SOT-23-3 FEATURES (JEDEC TO-236) * RDS(ON)=3.5Ω @ VGS=10V * RDS(ON)=6.0Ω @ VGS=4.5V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Package BSS138G-AE2-R SOT-23-3 1 S Pin Assignment 2 G 3 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-271.c BSS138 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 50 V ±20 V DC 0.22 Continuous Drain Current ID A Pulse 0.88 Power Dissipation 0.36 W PD Derate Above 25°C 2.8 mW/°C Junction Temperature TJ ℃ +150 Storage Temperature TSTG ℃ -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 350 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS ΔBVDSS/ΔTJ TEST CONDITIONS VGS=0V, ID=250µA IDSS Gate–Body Leakage, Forward ON CHARACTERISTICS (Note) Gate-Threshold Voltage Gate Threshold Voltage Temperature Coefficient IGSS VDS=50V, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±20V VGS(TH) VDS=VGS, ID=1m A VGS=10 V, ID=0.22A VGS=4.5 V, ID=0.22A VGS=10 V, VDS=5V VDS=10V, ID=0.22A On-State Drain Current ID(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note) Total Gate Charge QG VDS=25V, VGS=10V, ID=0.22A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.29A,VGS=10V, Turn-ON Rise Time tR RG=6Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS=0.44A (Note) Max. Diode Forward Current IS Notes: Pulse test; pulse width ≤ 300us, duty cycle≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT V 72 mV/℃ 0.5 0.1 ±100 0.8 ΔVGS(TH)/ΔTJ ID=1mA, Referenced to 25°C RDS(ON) TYP 50 ID=250μA, Referenced to 25°C Zero Gate Voltage Drain Current Static Drain–Source On–Resistance MIN 1.3 1.5 -2 0.7 1.0 0.2 0.12 µA nA V mV/°C 3.5 6.0 Ω 0.5 A S 27 13 6 pF pF pF 1.7 0.1 0.4 2.5 9 20 7 2.4 5 18 36 14 nC nC nC ns ns ns ns 0.8 1.4 0.22 V A 2 of 3 QW-R502-271.c BSS138 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-271.c