UTC DTA143T Digital transistors (built- in bias resistors) Datasheet

UNISONIC TECHNOLOGIES CO., LTD.
DTA143T
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
3
1
FEATURES
3
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
1
B
SOT-323
2
EQUIVALENT CIRCUIT
R1
SOT-23
2
3
C
2
E
1
SOT-523
* Pb-free plating product number: DTA143TL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTA143T-AE3-R
DTA143TL-AE3-R
DTA143T-AL3-R
DTA143TL-AL3-R
DTA143T-AN3-R
DTA143TL-AN3-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
DTA143TL-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
AE3T
A5T
For SOT -23/SOT -323
Package
For SOT -523 Package
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1of 3
QW-R206-058,D
DTA143T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
-50
V
-50
V
-5
V
-100
mA
SOT-523
150
mW
Collector Power Dissipation
PC
SOT-23/SOT-323
200
mW
℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-base breakdown voltage
BVCBO IC=-50μA
Collector-emitter breakdown voltage
BVCEO IC=-1mA
Emitter-base breakdown voltage
BVEBO IE=-50μA
Collector cutoff current
ICBO
VCB=-50V
Emitter cutoff current
IEBO
VEB=-4V
Collector-emitter saturation voltage
VCE(SAT) IC=-5mA, IB= -0.25mA
DC Current Gain
hFE
VCE=-5V, IC= -1mA
Input resistance
R1
Transition frequency
fT
VCE=-10V, IE=5mA, f=100MHz *
* Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-50
-50
-5
TYP
100
3.29
250
4.7
250
MAX UNIT
V
V
V
-0.5 μA
-0.5 μA
-0.3
V
600
6.11 kΩ
MHz
2 of 3
QW-R206-058,D
DTA143T
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain vs. Collector Current
Collector Saturation Voltage, V CE(SAT)(mV)
1000
VCE=-5V
DC Current Gain, hFE
500
200
Ta=100℃
25℃
-40℃
100
50
20
10
5
2
1
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50
-100
Collector Current, Ic (mA)
-1000
Ic/IB=20
-500
Ta=100℃
25℃
-40℃
-200
-100
-50
-20
-10
-5
-2
-1
-0.1
-0. 2
-0.5
-1
-2
-5
-10
-20
-50
-100
Collector Current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R206-058,D
Similar pages